Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "72.80.Ey" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 88
Tytuł:
The Temperature Dependence of the Three-Dimensional Analogue of the Quantum Hall Effect in Semimagnetic Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Laue, I.
Portugall, O.
Von Ortenberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1886976.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
Opis:
Due to the pinning of the Fermi energy to a localised donor state in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se the free carrier concentration oscillates in an applied external magnetic field. We measured the resulting modulations of the Hall resistance in fields up to 17.5 T and at temperatures between 4.2 K and 30 K.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 359-362
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport Characterization of HgCdTe Solid Solutions Structural Quality
Autorzy:
Berchenko, N. N.
Kurbanov, K. R.
Nikiforov, A. Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1933722.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
Opis:
It has been demonstrated that variable-magnetic-field Hall measurements for n-Hg$\text{}_{1-x}$Cd$\text{}_{x}$Te samples in the extrinsic and intrinsic conductivity regions permit to identify and to evaluate semiqualitatively electrical activity of extended defects in this material.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 679-682
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A New Type of Semi-Insulating Materials
Autorzy:
Leon, R. P.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1921578.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
Opis:
The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 664-669
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
Autorzy:
Suchanek, B.
Palczewska, M.
Pakuła, K.
Baranowski, J.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968425.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.61.Ey
Opis:
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10$\text{}^{17}$ cm$\text{}^{-1}$ and mobility up to 500 cm$\text{}^{2}$/(V s) were achieved whereas hole concentration up to 7×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility about 16 cm$\text{}^{2}$/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g$\text{}_{⊥}$=1.9487 and g$\text{}_{∥}$=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1001-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistance of n-CdTe in the "Persistent" State
Autorzy:
Kossacki, P.
Karpierz, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929742.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
72.80.Ey
Opis:
In this paper we present results of measurements done on photoexcited carriers in high purity n-CdTe at liquid helium temperature. The photocurrent under near band gap illumination was measured, as well as the long term (≈ 15 hours) photoconductive decay after switching off the light. The transverse magnetoresistance was measured in high magnetic fields in two cases: 1) under external illumination, 2) in the "persistent" state after ≈ 15 h of photocurrent decay. It was shown that in high magnetic fields this magnetoresistance exhibits a quadratic dependence on magnetic field (Δρ/ρ ≈ B$\text{}^{2}$) in both cases.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 737-740
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Behavior of the Hall Effect in III-V Heterostructures
Autorzy:
Dziuba, Z.
Górska, M.
Marczewski, J.
Przesławski, T.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2012953.pdf
Data publikacji:
2000-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
72.80.Ey
Opis:
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
Źródło:
Acta Physica Polonica A; 2000, 97, 2; 331-336
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mercury Zinc Telluride 10.6 µm Ambient Temperature Photodetectors
Autorzy:
Piotrowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891904.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
72.80.Ey
Opis:
Theoretical and experimental investigations of mercury zinc telluride (MZT) ambient temperature longwavelength photodetectors are reported. The ultimate detectivities of MZT photoconductors (PC), photodiodes, photoelectromagnetic (PEM) and Dember detectors at 10.6 μm have been calculated as a function of material composition, doping and geometry of the devices. The high-temperature longwavelength PC and PEM detectors have been fabricated from Cu-doped bulk MZT crystals grown by a modified quench/anneal technique. The measured performance has been confronted with theoretical predictions showing good overall agreement. It is concluded that the high figure of merit, stability and hardness of MZT make this material superior in comparison to mercury cadmium telluride and that it will replace the latter in application for high-temperature photodetectors. The performance of high-temperature MZT photodetectors can be further improved by the use of optical resonant cavity and optical immersion. These devices exhibit detectivity by several orders of magnitude higher than thermal detectors with subnanosecond response time, and can achieve performance comparable to that of slow thermal detectors.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 751-765
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatial Correlations of Donor Charges in MBE CdTe
Autorzy:
Suski, T.
Wiśniewski, P.
Litwin-Staszewska, E.
Wasik, D.
Przybytek, J.
Baj, M.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934021.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
71.55.Gs
Opis:
We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ$\text{}_{H}$, as a function of electron concentration, n$\text{}_{H}$, at T=77 K. Changes of n$\text{}_{H}$ have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n$\text{}_{H}$ has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ$\text{}_{H}$ correspond to the same value of n$\text{}_{H}$. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Studies in Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se Layers Grown by MBE
Autorzy:
Płachetko, S.
Ząbik, G.
Łukasiak, Z.
Borowski, P.
Bała, W.
Powiązania:
https://bibliotekanauki.pl/articles/1992065.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.80.Ey
Opis:
The deep levels present in semiconducting Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: E$\text{}_{T1}$=0.28 eV and E$\text{}_{T2}$=0.56 eV. For the Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 483-486
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically-Determined Exciton Transport in GaAs Structures
Autorzy:
Gililand, G. D.
Wolford, D. J
Hjalmarson, H. P
Petrovic, M. S.
Klem, J.
Kuech, T. F.
Northrop, G. A.
Bradley, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/1929606.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.80.Ey
Opis:
We have used an all-optical photoluminescence-imaging technique to measure excitonic transport in three types of GaAs structures in which the excitonic transitions vary from allowed direct-gap excitons to forbidden, doubly-indirect Type-II excitons. We f nd remarkable differences in the transport properties of these excitons. Our studies show that bulk free-exciton transport exhibits an anomalous laser power-dependent diffusivity, whereas quasi-2D interfacial excitons and Type-II cross-interface excitons do not. Additionally, we observe localization of cross-interface excitons at the potential disorder induced by the heterointerface roughness.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 409-417
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
35×4 Substates of DX Centers in AlGaAs:Si
Autorzy:
Ostermayer, G.
Brunthaler, G.
Stöger, G.
Jantsch, W.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1929749.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.80.Ey
Opis:
The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E$\text{}_{B}$ for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 765-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Alloy Splitting of the Te-DX States in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:
Ostermayer, G.
Jantsch, W.
Dobosz, D.
Żytkiewicz, Z. R.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1929750.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.80.Ey
Opis:
We report investigations of the Hall effect and conductivity of Te doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 769-772
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anisotropy of Magnetic Interactions in HgFeSe
Autorzy:
Wilamowski, Z.
Przybylińska, H.
Joss, W.
Guillot, M.
Powiązania:
https://bibliotekanauki.pl/articles/1921599.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
75.20.Hr
Opis:
Magnetic properties (susceptibility, high-field torque and magnetization) of cubic HgFeSe are analyzed. Van Vleck magnetism of Fe$\text{}^{2+}$ is well evidenced. The energy splitting of the Fe levels in HgSe is shown to differ considerably from that in other II-VI compounds.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 689-692
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Conductivity in (Zn,Fe)Se Intentionally Doped with Ag
Autorzy:
Zaręba, A.
Demianiuk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1921698.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.80.Ey
Opis:
The transport phenomena in (Zn,Fe)Se were studied. In order to obtain iron centers in Fe$\text{}^{3+}$ charge state the crystals were doped by Ag what produces acceptors compensating Fe$\text{}^{2+}$ donors. The results are explained in terms of thermally activated jumping of charges between Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ centers. The nature of activation energy is discussed. The polaron model seems to be not valid in our case. The Coulomb interaction between charged acceptors and "holes" on iron centers is considered as the origin of thermal activation of jumps. We suggest the deviation from random and mutually independent distributions of charged Ag acceptors and Fe$\text{}^{3+}$ ions resulting from the electrostatic interactions between them at high temperatures.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 749-752
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 88

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies