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Wyszukujesz frazę "72.50.+b" wg kryterium: Temat


Tytuł:
Phonon-plasmon interactions in inhomogeneous semiconductor plasma embedded with nanoparticle cluster
Autorzy:
Ghosh, S.
Dubey, P.
Powiązania:
https://bibliotekanauki.pl/articles/1050820.pdf
Data publikacji:
2018-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
72.50.+b
73.22.Lp
Opis:
Phonon-plasmon interaction in inhomogeneous piezosemiconductor embedded with a nanoparticle cluster is examined using hydrodynamic model of plasma and macroscopic model of piezoelectric media. Present work dealt with the extensive investigation of acoustic wave amplification characteristics. The effects of density gradient δ and non-dimensional parameter l related to nanoparticle cluster on acoustic gain have been studied with varying medium electron density n_{0e}, wave frequency ω and velocity ratio ϑ_{0}/ϑ_{s}. The results so obtained, infer that the varying inhomogeneity and presence of nanoparticle cluster within the semiconductor plasma medium play decisive role in depicting the gain characteristics of acoustic wave.
Źródło:
Acta Physica Polonica A; 2018, 133, 5; 1287-1293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Different Quantization Mechanisms in Single-Electron Pumps Driven by Surface Acoustic Waves
Autorzy:
Utko, P.
Gloos, K.
Bindslev Hansen, J.
Sørensen, C.
Lindelof, P.
Powiązania:
https://bibliotekanauki.pl/articles/2047039.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
72.50.+b
73.21.La
Opis:
We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on each other. This could indicate two independent quantization mechanisms for the acoustoelectric current.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 403-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves
Autorzy:
Utko, P.
Gloos, K.
Hansen, J. B.
Lindelof, P. E.
Powiązania:
https://bibliotekanauki.pl/articles/2035753.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
72.50.+b
06.20.Jr
Opis:
We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating surface acoustic waves beam, up to n=20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the surface acoustic waves frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to beΔ I/I=±25 ppm over 0.25 mV in gate voltage, which is better than previous results.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 533-538
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method
Autorzy:
Pustelny, T.
Powiązania:
https://bibliotekanauki.pl/articles/1943942.pdf
Data publikacji:
1995-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
43.35.+d
72.50.+b
Opis:
A method of surface potential determination in semiconductors by means of the transverse acoustoelectric effect is described. The results of theoretical analysis of the transverse acoustoelectric voltage versus surface potential and different surface electrical parameters in indium phosphate single crystals are presented. The experimental results of the surface potential investigations have been obtained after various surface treatments in InP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to different surface treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V].
Źródło:
Acta Physica Polonica A; 1995, 88, 6; 1123-1132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Amplitude Modulation and Demodulation in Strain Dependent Diffusive Semiconductors
Autorzy:
Ghosh, S.
Yadav, N.
Powiązania:
https://bibliotekanauki.pl/articles/2047356.pdf
Data publikacji:
2007-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.35.Mw
72.50.+b
66.30.-h
Opis:
In communication processes, amplitude modulation is very helpful to save power by using a single band transmission. Thus in this paper authors have explored the possibility of amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetized electrostrictive semiconductor. The inclusion of carrier diffusion and phenomenological damping coefficient in the nonlinear laser-semiconductor plasma interaction adds a new dimension to the analysis present in this paper. This problem is analyzed in different wave number regimes over a wide range of cyclotron frequencies. It is found that the complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency (ω$\text{}_{c}$) becomes exactly equal to (ν$\text{}^{2}$+ω$\text{}_{0}^{2}$)$\text{}^{1}\text{}^{/}\text{}^{2}$ in absence of damping parameter. It has also been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes significantly. The damping parameter plays a very important role in deciding the parameter range and selecting the side band mode that will be modulated by the above-mentioned interaction.
Źródło:
Acta Physica Polonica A; 2007, 112, 1; 29-40
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acoustic Transport of Electrons in Parallel Quantum Wires
Autorzy:
Cunningham, J.
Pepper, M.
Talyanskii, V.
Ritchie, D. A.
Powiązania:
https://bibliotekanauki.pl/articles/2041625.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Hb
72.50.+b
73.50.Rb
77.65.Dq
Opis:
Over the last few years we have developed a new method to control single-electrons by isolating and moving them through a submicron width channel formed in a GaAs/AlGaAs heterostructure using a surface acoustic wave. The acoustic wave acts to push electrons through the depleted submicron channel in packets each containing an integer number of electrons. Our primary motivation for studying this system has been to develop a new standard of dc current for metrological purposes, but our recent focus has widened to investigate the possibility of single-photon emission. Here we show new experimental results which demonstrate acoustoelectric current flow in adjacent 1D wires. These results have relevance both to the use of the system in a single-photon emission scheme, as well as in the creation of a proposed acoustoelectric quantum computer.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 38-45
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acousto-electric interaction in magnetised piezoelectric semiconductor quantum plasma
Autorzy:
Ghosh, S.
Muley, A.
Powiązania:
https://bibliotekanauki.pl/articles/1058496.pdf
Data publikacji:
2016-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.50.+b
52.35.-g
61.72.uj
77.65.-j
Opis:
Amplification of an acoustic wave is considered in magnetised piezoelectric n-type semiconductor plasma under quantum hydrodynamic regime. The important ingredients of this study are the inclusion of quantum diffraction effect via the Bohm potential, statistical degeneracy pressure, and externally applied magnetostatic field in the momentum balance equation of the charged carriers. A modified dispersion relation is derived for evolution of acoustic wave by employing the linearization technique. Detailed analysis of quantum modified dispersion relation of acoustic wave is presented. For a typical parameter range, relevant to n-InSb at 77 K, it is found that the non-dimensional quantum parameter H reduces the gain while magnetic field enhances the gain of acoustic wave. The crossover from attenuation to amplification occurs at (ϑ₀/ϑₛ)=1 and this crossover point is found to be unaffected by quantum correction and magnetic field. It is also found that the maximum gain point shifts towards lower drift velocity regime due to the presence of magnetic field while quantum parameter H shifts this point towards higher drift velocity. Numerical results on the acoustic gain per radian and acoustic gain per unit length are also illustrated. Our results could be useful in understanding acoustic wave propagation in magnetised piezoelectric semiconductor in quantum regime.
Źródło:
Acta Physica Polonica A; 2016, 130, 6; 1401-1405
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method
Autorzy:
Pustelny, T.
Opilski, A.
Pustelny, B.
Powiązania:
https://bibliotekanauki.pl/articles/1811565.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.50.+b
77.65.Dq
73.50.Rb
73.20.-r
73.61.-r
Opis:
The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-183-A-190
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Diamond in Surface Acoustic Wave Sensors
Autorzy:
Hribšek, M.
Ristić, S.
Radojković, B.
Powiązania:
https://bibliotekanauki.pl/articles/1537912.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.50.+b
77.65.Dq
43.35.Pt
77.55.hd
77.55.H-
Opis:
The application of diamond in surface acoustic wave sensors is considered. The new method of the complete analyses of diamond-based gas chemical sensors is presented. It is based on the electromechanical equivalent circuit of the surface acoustic wave sensor. The method is very efficient and can be used for the optimal design of gas sensors. Since the diamond can be easily merged into solid state and biological systems, the development of smart biological sensors is possible. The advantages over silicon based sensors are also shown.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 794-798
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamical Aspects of Magnetic Switching in a Single Molecule-Based Spin Valve
Autorzy:
Płomińska, A.
Misiorny, M.
Weymann, I.
Powiązania:
https://bibliotekanauki.pl/articles/1030425.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.-b
75.50.Xx
Opis:
The dynamics of the current-induced magnetic switching process is theoretically studied in a spin-valve device containing a single magnetic molecule of spin S=1. The analysis is performed by using the real-time diagrammatic technique in the sequential electron tunneling regime. In particular, we show that the magnetic moment of a molecule can be reversed also in the presence of intrinsic spin relaxation processes. Moreover, we discuss how the process of magnetic switching depends on a transport bias voltage as well as on some key parameters of the device.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 555-557
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin and Charge Transport in a Magnetic Tunnel Junction with Magnetic Impurities Embedded in the Tunnel Barrier
Autorzy:
Misiorny, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402573.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.25.-b
73.23.-b
75.50.Xx
Opis:
Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic impurity atoms/molecules embedded in the barrier is studied theoretically. The impurity Hamiltonian includes magnetic anisotropy of easy axis type with additional perpendicular term. The description takes into account both elastic tunneling processes as well as inelastic processes associated with a flip of electron spin.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 196-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signatures of Transverse Magnetic Anisotropy in Transport through a Large-Spin Molecule in the Kondo Regime
Autorzy:
Misiorny, M.
Weymann, I.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402574.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.25.-b
73.23.-b
75.50.Xx
Opis:
The effect of transverse magnetic anisotropy on spin-dependent transport through a large-spin molecule strongly tunnel-coupled to ferromagnetic electrodes is analyzed theoretically. In particular, we investigate whether it is possible to observe in transport signatures of oscillations of the ground-state doublet splitting due to the application of an external magnetic field along the molecule's hard axis. We show that magnetic field leads to revivals of the Kondo effect, with the Kondo temperature depending on the magnetic configuration of the device.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 200-203
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films
Autorzy:
Paja, A.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1814037.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Cz
72.25.Ba
73.50.-h
73.63.-b
Opis:
We consider the electron transport through a very thin disordered metallic film doped with magnetic impurities. We treat the film as a quasi-two-Łinebreak -dimensional system with structural disorder where some ions have spins and other are spinless. The interaction of conduction electrons with localized spins is described by means of the exchange term of the Hamiltonian. The scattering is treated in the first Born approximation and the potential is assumed to be the Coulomb screened one. The total effective cross-section is calculated as a sum of the part responsible for the potential scattering and the second part which comes from the spin-spin scattering. The Fermi sphere splits into separate sheets due to the finite size of the system in the z direction, therefore, the cross-section and the relaxation time are calculated for each sheet independently. The total transport relaxation time and the conductivity are obtained as functions of the thickness of the system and the contents of magnetic impurities. Some model calculations have been made for a thin disordered film of copper doped with manganese.
Źródło:
Acta Physica Polonica A; 2007, 112, 6; 1289-1295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Magnetic Zigzag Edges in Graphene-like Nanoribbons on the Thermoelectric Power Factor
Autorzy:
Krompiewski, S.
Cuniberti, G.
Powiązania:
https://bibliotekanauki.pl/articles/1030504.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
72.25.-b
73.50.Lw
Opis:
This study shows that magnetic edge states of graphene-like nanoribbons enhance effectively the thermoelectric performance. This is due to the antiparallel alignment of magnetic moments on opposite zigzag edges and the confinement effect, which jointly lead to the appearance of a gap in the electronic energy spectrum. Consequently, the Seebeck coefficient as well as the thermoelectric power factor get strongly enhanced (with respect to other alignment cases) at room temperature and energies not far away from the charge neutrality point. Moreover the corresponding figure of merit (ZT) is also improved as a result of the reduced electronic thermal conductance.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 535-537
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Negative Differential Conductivity in InAs/AlSb Superlattices
Autorzy:
Kagan, M.
Altukhov, I.
Baranov, A.
Il'ynskaya, N.
Paprotskiy, S.
Sinis, V.
Teissier, R.
Usikova, A.
Powiązania:
https://bibliotekanauki.pl/articles/1505706.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
73.50.Fq
73.63.-b
Opis:
The negative differential conductivity and electric instabilities are found to appear in type-II InAs/AlSb superlattices. The origin of the nonlinear effects is discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 210-211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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