Amplitude Modulation and Demodulation in Strain Dependent Diffusive Semiconductors

In communication processes, amplitude modulation is very helpful to save power by using a single band transmission. Thus in this paper authors have explored the possibility of amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetized electrostrictive semiconductor. The inclusion of carrier diffusion and phenomenological damping coefficient in the nonlinear laser-semiconductor plasma interaction adds a new dimension to the analysis present in this paper. This problem is analyzed in different wave number regimes over a wide range of cyclotron frequencies. It is found that the complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency (ω$\text{}_{c}$) becomes exactly equal to (ν$\text{}^{2}$+ω$\text{}_{0}^{2}$)$\text{}^{1}\text{}^{/}\text{}^{2}$ in absence of damping parameter. It has also been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes significantly. The damping parameter plays a very important role in deciding the parameter range and selecting the side band mode that will be modulated by the above-mentioned interaction.