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Wyświetlanie 1-15 z 21
Tytuł:
Improvement of Electrical Properties of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se upon Doping with Fe
Autorzy:
Dobrowolski, W.
Grodzicka, E.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1921589.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
72.20.Fr
71.55.Fr
Opis:
Results of measurements of electron concentration and mobility in mixed crystals of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n$\text{}_{Fe}$ ≤ 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 681-684
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metastability of Localized Neutral Donor State In GaAs
Autorzy:
Skierbiszewski, C.
Jantsch, W.
Lübke, K.
Wilamowski, Z.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933994.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
71.55.-i
Opis:
Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 905-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coulomb versus Madelung Gap: Ordering in a System of Point Charges
Autorzy:
Sobkowicz, P.
Wilamowski, Z.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929618.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Fr
Opis:
Spatial correlations of impurity charges in a mixed valence regime are studied with the use of Monte Carlo simulations. The influence of various kinds of disorder on the one-particle density of states is determined. A continuous transitions from a "soft" Coulomb gap (density of states vanishing only at the chemical potential) to a "hard" gap (with a finite range of energies with vanishing density of states) is found, driven by decreasing amount of built-in disorder in the system. The "hard" Coulomb gap resembles the Madelung gap, found in crystalline arrangements of charges. The similarity reflects the fact that both the Coulomb and Madelung gaps are manifestations of the same phenomenon, resulting from ordering of the positions of point charges, the only difference being the range of correlations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 515-518
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evidence for Alloy Splitting of Ge Related DX State in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:
Skierbiszewski, C.
Piotrzkowski, R.
Lubke, K.
Powiązania:
https://bibliotekanauki.pl/articles/1992190.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Fr
Opis:
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C$\text{}_{3v}$ configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 531-533
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering
Autorzy:
Pődör, B.
Powiązania:
https://bibliotekanauki.pl/articles/2044528.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.20.Dp
72.80.Ey
Opis:
Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T$\text{}^{-1}\text{}^{/}\text{}^{2}$ like temperature dependence dominated the hole mobility in the investigated temperature range.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 837-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
72.80.Jc
Opis:
The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors
Autorzy:
Yurtsenyuk, N.
Kosyachenko, L.
Sklyarchuk, V.
Maslyanchuk, O.
Sklyarchuk, O.
Grushko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492970.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ey
78.20.Ci
Opis:
The electrical properties of single $Cd_{1 - x}Mn_{x}Te$ (x= 0.07 - 0.39) crystals with a resistivity of ≈ $10^8$ Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 957-959
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of InGaP Doped with Si
Autorzy:
Litwin-Staszewska, E.
Trzeciakowski, W.
Piotrzkowski, R.
Gonzalez, L.
Powiązania:
https://bibliotekanauki.pl/articles/1991938.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ey
71.55.Eq
Opis:
We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E$\text{}_{F}$). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 431-435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance of a Quantum Wire with Finite Length
Autorzy:
Suhrke, M.
Wilke, S.
Keiper, R.
Powiązania:
https://bibliotekanauki.pl/articles/1879929.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.20.Fr
72.10.Bg
Opis:
The conductance of a ballistic quantum wire between two reservoirs exhibits steps of height 2e$\text{}^{2}$/h, if the occupation of transverse subbands is changed. We investigate conditions for observation of these steps starting from Kubo-Greenwood formula. We show how the conductance steps are influenced by the properties of the external regions as well as by the nature of the connection between these regions and the wire. Furthermore we incorporate residual scattering in long wires.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931913.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1924252.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 908-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgSe Based Mixed Crystals Doped with Fe Resonant Donors
Autorzy:
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1943963.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
71.55.Gs
Opis:
The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 3-36
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$Zn_{1-x}(Mn,Co)_xGeAs_2$ Ferromagnetic Semiconductor: Magnetic and Transport Properties
Autorzy:
Kilanski, L.
Gorska, M.
Domukhovski, V.
Dobrowolski, W.
Anderson, J.
Rotundu, C.
Varniavskii, S.
Marenkin, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811937.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.50.Pp
75.40.Cx
Opis:
We present the studies of magnetic and transport properties of the bulk $Zn_{1-x}(Mn, Co)_xGeAs_2$ mixed crystals with 0.052 ≤ x ≤0.182 grown using direct fusion method. Magnetic investigations showed that for samples with x ≥ 0.078 we observed a behavior typical of ferromagnets, with the Curie temperatures $T_C$ ≥ 300 K. The observed ferromagnetism was probably connected with the spinodal decomposition of the Mn ions in the alloy. The transport studies including resistivity and Hall effect (at B=1.4 T) were performed. The samples showed p-type conductivity with semiconducting or metallic character, depending on the alloy composition. The Hall carrier concentration, p ≥ $10^{18} cm^{-3}$, was composition dependent.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1151-1157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

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