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Wyświetlanie 1-15 z 32
Tytuł:
Aharonov-Bohm Effect at Misfit Dislocations in GaAsSb/GaAs Heterostructures
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Dobrowolski, W.
Raczyńska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1950746.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
73.40.Kp
03.65.Bz
Opis:
We examined the current flowing through p$\text{}^{+}$-n junction of the lattice mismatched GaAs$\text{}_{1-x}$Sb$\text{}_{x}$/GaAs heterostructure in a transverse magnetic field at 1.8 K. We have found the appearance of current oscillations, periodic as a function of the magnetic field, that are due to the Aharonov-Bohm effect of holes passed around charged dislocations.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 773-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anderson Localization of Electromagnetic Waves in Dielectric Media: Model Studies
Autorzy:
Rusek, M.
Orłowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2044616.pdf
Data publikacji:
2006-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Fx
42.25.Hz
72.10.Fk
78.20.Ci
Opis:
Anderson localization of electromagnetic waves in random arrays of dielectric cylinders confined within a planar metallic waveguide is studied. The disordered dielectric medium is modeled by a system of randomly distributed 2D electric dipoles. An effective theoretical approach based on the method of images is developed. A clear distinction between isolated localized waves (which exist in finite media) and the band of localized waves (which appears only in the limit of the infinite medium) is presented. The Anderson transition emerging in the limit of an infinite medium is observed both in finite size scaling analysis of transmission and in the properties of the spectra of some random matrices. The sound physical interpretation of the obtained results suggests deeper insight into the existing experimental and theoretical work.
Źródło:
Acta Physica Polonica A; 2006, 109, 1; 109-119
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bulk and Epitaxial $Co_2MnSi$ Systems with Antisite Disorder: Ab Initio Calculations
Autorzy:
Carva, K.
Turek, I.
Powiązania:
https://bibliotekanauki.pl/articles/1813602.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.-b
72.10.Fk
Opis:
The intermetallic compound $Co_2MnSi$ is halfmetallic, but the structure of real samples is often affected by antisite disorder. The influence of disorder on transport properties is examined by ab initio calculations and is found to be more significant in thin $Co_2MnSi$ slabs sandwiched by metallic leads than in the bulk compound.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 183-186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929627.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Gq
72.10.Di
72.10.Fk
Opis:
Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 535-537
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conduction Mechanism of 4-Aminoantipyrine as a New Organic Semiconductor
Autorzy:
Yahia, I.
Powiązania:
https://bibliotekanauki.pl/articles/1198658.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Me
78.40.Fy
72.10.Fk
77.84.Bw
Opis:
X-ray diffraction pattern of 4-aminoantipyrine was studied and it is a single phase with a polycrystalline structure. 4-aminoantipyrine has hexagonal structure with space group P6/mcc. The electrical properties of 4-aminoantipyrine were studied in the temperature range (303-373 K) below the melting point of the studied compound and in the frequency range (100 Hz-100 kHz). The obtained results of dc conductivity showed a positive temperature coefficient at the lower temperatures and a negative temperature coefficient at the higher temperatures. The ac conductivity obeys the power law. Ac conductivity can be reasonably interpreted in terms of overlapping-large polaron tunneling model and the correlated barrier hopping model. 4-aminoantipyrine is a good candidate for electronic device due to its electrical conductivity and capacitance.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1167-1171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation Effects and Spin Dependent Transport in Carbon Nanostructures
Autorzy:
Lipiński, S.
Krychowski, D.
Powiązania:
https://bibliotekanauki.pl/articles/1201833.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
73.63.Fg
73.63.Kv
85.75.-d
Opis:
The impact of symmetry breaking perturbations on the spin dependent transport through carbon nanotube quantum dots in the Kondo regime is discussed. The proposals of spin filter, spin valve and spin battery are presented.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 190-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Inelastic Mean Free Path of Electrons in Noble Metals
Autorzy:
Doliński, W.
Mróz, S.
Palczyński, J.
Gruzza, B.
Bondot, P.
Porte, A.
Powiązania:
https://bibliotekanauki.pl/articles/1892437.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
79.20.Fv
Opis:
The experimental values of Inelastic Mean Free Path (λ$\text{}_{IMFP}$) of electrons in noble metals (Ag, Au, Cu) are determined in the electron energy range 150-2000 eV. The method used consists of the measurements and theoretical calculations of the coefficient of elastic backscattering of electrons from a solid surface η$\text{}_{e}$. The obtained values of λ$\text{}_{IMFP}$ are compared with the data available in the literature.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 193-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Disorder on Spin and Charge Excitations in the Fractional Quantum Hall Effect
Autorzy:
Výborný, K.
Müller, Ch.
Dethlefsen, A. F.
Haug, R. J.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047400.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
75.10.Jm
72.10.Fk
73.63.-b
Opis:
A simple model of disorder in fractional quantum Hall systems is combined with the standard exact diagonalisation technique. Electron-density-dependent gaps at filling factors 1/3,2/3,2/5, and 3/5 measured by activated transport can then be fitted with a single reasonable value of d which has the meaning of the separation of ionized donors from the quasi-2D electron gas.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 249-254
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ESR Spectroscopy of Graphene with Adsorbed NaCl Particles
Autorzy:
Karpierz, E.
Drabińska, A.
Bożek, R.
Kaźmierczak, P.
Wysmołek, A
Kamińska, M
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1376214.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.ue
72.10.Fk
78.67.Wj
72.80.Vp
Opis:
Due to its peculiar properties graphene is a good candidate for sensor materials. Therefore, it is important to study influence of different fluids on graphene layer. The presented studies showed pinning of NaCl microcrystals to graphene surface after immersing graphene in NaCl solution and subsequent careful rinsing with distilled water. The atomic force microscopy images revealed presence of many NaCl-related structures over 100 nm high on graphene surface. The electron spin resonance spectrum for magnetic field perpendicular to the graphene layer consisted of several lines originating from NaCl. The pinning of NaCl microcrystals resulted in increase of electron scattering, as confirmed by the Raman spectroscopy (the increase of intensity of D and D' bands) and weak localization measurement (the decrease of coherence length).
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1187-1189
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Graphene Conductance in the Presence of Resonant Impurities
Autorzy:
Inglot, M.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402560.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.80.Vp
73.20.Hb
Opis:
We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 163-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgSe Based Mixed Crystals Doped with Fe Resonant Donors
Autorzy:
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1943963.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
71.55.Gs
Opis:
The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 3-36
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity Self-Screening
Autorzy:
Wilamowski, Z.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929774.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.45.-d
72.10.Fk
Opis:
In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 832-834
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
Autorzy:
Makarov, N. M.
Moroz, A. V.
Powiązania:
https://bibliotekanauki.pl/articles/1964813.pdf
Data publikacji:
1997-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Bk
72.10.Fk
Opis:
We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
Źródło:
Acta Physica Polonica A; 1997, 92, 2; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kondo-Fano Effect in Double Quantum Dot Side Attached to a Pair of Wires
Autorzy:
Krychowski, D.
Lipiński, S.
Powiązania:
https://bibliotekanauki.pl/articles/1386758.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
73.21.-b
73.22.-f
73.23.-b
Opis:
Electron tunneling through a double quantum dot side coupled to a pair of leads is examined in finite-U slave boson mean field approach. Both the two-impurity Kondo regime at half filling and one-and three-electron Kondo effects are analyzed. Special attention is paid to the case when one of the dots is coupled to ferromagnetic lead and another to nonmagnetic. Depending on the gate voltage, the same or opposite sign of polarizations of conductance of the leads is observed.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 487-489
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 32

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