Temat: 72.10.Fk - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Bulk and Epitaxial $Co_2MnSi$ Systems with Antisite Disorder: Ab Initio Calculations
Autorzy:: Carva, K.
Turek, I.
Powiązania:: https://bibliotekanauki.pl/articles/1813602.pdf
Data publikacji:: 2008-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.25.-b
72.10.Fk
Opis:: The intermetallic compound $Co_2MnSi$ is halfmetallic, but the structure of real samples is often affected by antisite disorder. The influence of disorder on transport properties is examined by ab initio calculations and is found to be more significant in thin $Co_2MnSi$ slabs sandwiched by metallic leads than in the bulk compound.
Źródło:: Acta Physica Polonica A; 2008, 113, 1; 183-186
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
Autorzy:: Makarov, N. M.
Moroz, A. V.
Powiązania:: https://bibliotekanauki.pl/articles/1964813.pdf
Data publikacji:: 1997-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Bk
72.10.Fk
Opis:: We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
Źródło:: Acta Physica Polonica A; 1997, 92, 2; 457-460
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Impurity Self-Screening
Autorzy:: Wilamowski, Z.
Przybylińska, H.
Powiązania:: https://bibliotekanauki.pl/articles/1929774.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.45.-d
72.10.Fk
Opis:: In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 832-834
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Determination of Inelastic Mean Free Path of Electrons in Noble Metals
Autorzy:: Doliński, W.
Mróz, S.
Palczyński, J.
Gruzza, B.
Bondot, P.
Porte, A.
Powiązania:: https://bibliotekanauki.pl/articles/1892437.pdf
Data publikacji:: 1992-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.Fk
79.20.Fv
Opis:: The experimental values of Inelastic Mean Free Path (λ$\text{}_{IMFP}$) of electrons in noble metals (Ag, Au, Cu) are determined in the electron energy range 150-2000 eV. The method used consists of the measurements and theoretical calculations of the coefficient of elastic backscattering of electrons from a solid surface η$\text{}_{e}$. The obtained values of λ$\text{}_{IMFP}$ are compared with the data available in the literature.
Źródło:: Acta Physica Polonica A; 1992, 81, 2; 193-199
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:: Dedulewicz, S.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1929627.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.70.Gq
72.10.Di
72.10.Fk
Opis:: Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 535-537
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:: Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:: https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Fr
72.10.Fk
72.80.Jc
Opis:: The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:: Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:: https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.Fk
72.20.Fr
72.80.Jc
Opis:: In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:: Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:: https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.Fk
72.20.Fr
72.80.Jc
Opis:: Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Transport Properties of Rippled Graphene
Autorzy:: Zwierzycki, M.
Powiązania:: https://bibliotekanauki.pl/articles/1428651.pdf
Data publikacji:: 2012-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.ue
72.10.Fk
72.80.Vp
Opis:: It is common to describe graphene as ideally flat plane, however there exists both theoretical and experimental evidence that it is most usual to find it in a rippled state. The ripples can be either induced by the substrate or formed spontaneously in suspended graphene. The lateral size of such features ranges between several and tens of nanometers with the height of up to 1 nm. It has been suggested that the presence of ripples could be one of the factors ultimately limiting mobility of carriers and that it may be also responsible, by introducing an effective gauge field, for the lack of weak localization observed in certain graphene samples. In the present contribution the transport properties of the rippled graphene are studied theoretically starting with the simple case of one-dimensional modulation. Using either single-band or the full $sp^3$ tight-binding Hamiltonians we compare and discuss the importance of two ripple-related mechanisms of scattering: the variation of interatomic distances and hybridization between π and σ bands of graphene.
Źródło:: Acta Physica Polonica A; 2012, 121, 5-6; 1246-1249
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Graphene Conductance in the Presence of Resonant Impurities
Autorzy:: Inglot, M.
Dugaev, V.
Powiązania:: https://bibliotekanauki.pl/articles/1402560.pdf
Data publikacji:: 2015-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.Fk
72.80.Vp
73.20.Hb
Opis:: We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
Źródło:: Acta Physica Polonica A; 2015, 128, 2; 163-165
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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