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Wyświetlanie 1-15 z 32
Tytuł:
Bulk and Epitaxial $Co_2MnSi$ Systems with Antisite Disorder: Ab Initio Calculations
Autorzy:
Carva, K.
Turek, I.
Powiązania:
https://bibliotekanauki.pl/articles/1813602.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.-b
72.10.Fk
Opis:
The intermetallic compound $Co_2MnSi$ is halfmetallic, but the structure of real samples is often affected by antisite disorder. The influence of disorder on transport properties is examined by ab initio calculations and is found to be more significant in thin $Co_2MnSi$ slabs sandwiched by metallic leads than in the bulk compound.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 183-186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity Self-Screening
Autorzy:
Wilamowski, Z.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929774.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.45.-d
72.10.Fk
Opis:
In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 832-834
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Inelastic Mean Free Path of Electrons in Noble Metals
Autorzy:
Doliński, W.
Mróz, S.
Palczyński, J.
Gruzza, B.
Bondot, P.
Porte, A.
Powiązania:
https://bibliotekanauki.pl/articles/1892437.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
79.20.Fv
Opis:
The experimental values of Inelastic Mean Free Path (λ$\text{}_{IMFP}$) of electrons in noble metals (Ag, Au, Cu) are determined in the electron energy range 150-2000 eV. The method used consists of the measurements and theoretical calculations of the coefficient of elastic backscattering of electrons from a solid surface η$\text{}_{e}$. The obtained values of λ$\text{}_{IMFP}$ are compared with the data available in the literature.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 193-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
Autorzy:
Makarov, N. M.
Moroz, A. V.
Powiązania:
https://bibliotekanauki.pl/articles/1964813.pdf
Data publikacji:
1997-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Bk
72.10.Fk
Opis:
We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
Źródło:
Acta Physica Polonica A; 1997, 92, 2; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929627.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Gq
72.10.Di
72.10.Fk
Opis:
Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 535-537
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
72.80.Jc
Opis:
The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of Rippled Graphene
Autorzy:
Zwierzycki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1428651.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.ue
72.10.Fk
72.80.Vp
Opis:
It is common to describe graphene as ideally flat plane, however there exists both theoretical and experimental evidence that it is most usual to find it in a rippled state. The ripples can be either induced by the substrate or formed spontaneously in suspended graphene. The lateral size of such features ranges between several and tens of nanometers with the height of up to 1 nm. It has been suggested that the presence of ripples could be one of the factors ultimately limiting mobility of carriers and that it may be also responsible, by introducing an effective gauge field, for the lack of weak localization observed in certain graphene samples. In the present contribution the transport properties of the rippled graphene are studied theoretically starting with the simple case of one-dimensional modulation. Using either single-band or the full $sp^3$ tight-binding Hamiltonians we compare and discuss the importance of two ripple-related mechanisms of scattering: the variation of interatomic distances and hybridization between π and σ bands of graphene.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1246-1249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Graphene Conductance in the Presence of Resonant Impurities
Autorzy:
Inglot, M.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402560.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.80.Vp
73.20.Hb
Opis:
We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 163-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Dependent Transport through Metallic System with Magnetic Impurities
Autorzy:
Spisak, B.
Wołoszyn, M.
Paja, A.
Powiązania:
https://bibliotekanauki.pl/articles/1810518.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.25.Ba
73.63.Nm
Opis:
The problem of spin-dependent transport of electrons through a metallic nanostructure is considered. The system consists of non-magnetic metal wire with two magnetic impurities and is connected to two ferromagnetic leads. The differential conductance is calculated by using the transfer matrix method. The spin polarization of the conductance is also obtained. It was found that this polarization is dependent on the spin configuration of magnetic impurities. This dependence can be controlled by the applied bias voltage.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 266-268
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgSe Based Mixed Crystals Doped with Fe Resonant Donors
Autorzy:
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1943963.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
71.55.Gs
Opis:
The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 3-36
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vertex Corrections to the Electrical Conductivity of the Disordered Falicov-Kimball Model
Autorzy:
Pokorný, V.
Janiš, V.
Powiązania:
https://bibliotekanauki.pl/articles/1534607.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
71.28.+d
72.10.Fk
Opis:
Quantum coherence of elastically scattered lattice fermions is studied. We calculate vertex corrections to the electrical conductivity of electrons scattered either on thermally equilibrated or statically distributed random impurities and we demonstrate that the sign of the vertex corrections to the Drude conductivity is in both cases negative.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 922-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals
Autorzy:
Ašmontas, S.
Raguotis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813219.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.65.Pp
72.10.-d
72.10.Fk
72.20.Dp
Opis:
Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 32

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