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Wyświetlanie 1-15 z 52
Tytuł:
Analysis of Crystal Lattice Deformation by Ion Channeling
Autorzy:
Jóźwik, P.
Sathish, N.
Nowicki, L.
Jagielski, J.
Turos, A.
Kovarik, L.
Arey, B.
Shutthanandan, S.
Jiang, W.
Dyczewski, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400434.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.85.+p
68.55.Ln
02.70.Uu
68.37.Og
Opis:
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 828-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy
Autorzy:
Żytkiewicz, Z. R.
Domagała, J.
Bąk-Misiuk, J.
Dobosz, D.
Leszczyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968459.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.Bs
68.55.Ln
Opis:
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1092-1096
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisite Defects in Epitaxial Films of Lutetium Doped Yttrium Iron Garnets Studied by Nuclear Magnetic Resonance
Autorzy:
Chlan, V.
Štěpánková, H.
Englich, J.
Řezníček, R.
Kouřil, K.
Kučera, M.
Nitsch, K.
Powiązania:
https://bibliotekanauki.pl/articles/1534129.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Gg
76.60.-k
76.60.Lz
68.35.Dv
68.55.Ln
Opis:
Series of lutetium doped yttrium iron garnet films is studied by means of $\text{}^{57}Fe$ nuclear magnetic resonance. Satellite spectral lines are resolved and identified in the spectra and concentrations of lutetium in dodecahedral sites as well as yttrium/lutetium antisite defects in octahedral sites are estimated. Compared to yttrium, lutetium cations are found to have stronger disposition towards creating the antisite defects.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 846-847
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method
Autorzy:
Gülen, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1205230.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.05.cp
68.55.Ln
Opis:
In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 763-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy
Autorzy:
Zubiaga, A.
Tuomisto, F.
Zúñiga-Pérez, J.
Muñoz-San José, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811964.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
68.55.Ln
68.37.-d
78.70.Bj
Opis:
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high $10^{17} cm^{-3}$ to low $10^{17} cm^{-3}$) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about $2×10^{17} cm^{-3}$ in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1257-1264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Combined Analyses of Ion Beam Synthesized Layers in Porous Silicon
Autorzy:
Ramos, A. R.
Pászti, F.
Horváth, Z. E.
Vázsonyi, É.
Conde, O.
da Silva, M. F.
da Silva, M. R.
Soares, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/2028988.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.18.Bn
61.43.Gt
68.55.Ln
Opis:
High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers severalμm thick were implanted with 170 keV Cr$\text{}^{+}$ ions to fluences of 3×10$\text{}^{17}$ ions/cm$\text{}^{2}$ both at room temperature and 450ºC. Similar samples were implanted with 100 keV Co$\text{}^{+}$ ions to fluences of 2×10$\text{}^{17}$ ions/cm$\text{}^{2}$ at room temperature, 350ºC, and 450ºC. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densifies during implantation, but the underlying porous silicon remains intact. The layer structure, as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 773-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
Autorzy:
Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934051.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Levels in Gallium Arsenide after Irradiation with Light Ions
Autorzy:
Schmidt, T.
Palmetshofer, L.
Lübke, K.
Powiązania:
https://bibliotekanauki.pl/articles/1877086.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
Opis:
Deep level centers in GaAs implanted with light ions (H$\text{}^{+}$, He$\text{}^{+}$) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 543-546
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Structure of High-Temperature-Grown GaMnSb/GaSb
Autorzy:
Romanowski, P.
Bak-Misiuk, J.
Dynowska, E.
Domagala, J.
Sadowski, J.
Wojciechowski, T.
Barcz, A.
Jakiela, R.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1539009.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.37.Hk
68.49.Sf
68.55.ag
68.55.Ln
Opis:
GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 341-343
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
Autorzy:
Dussan, A.
Schmidt, J.
Koropecki, R.
Powiązania:
https://bibliotekanauki.pl/articles/1207505.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
61.72.uf
Opis:
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane $(SiH_4)$ diluted in hydrogen, and diborane $(B_2H_6)$ as a dopant gas. The concentration of $B_2H_6$ in $SiH_4$ was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the $μ_{n}τ_{n}$ product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 174-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profile Analysis of Phosphorus Implanted SiC Structures
Autorzy:
Konarski, P.
Król, K.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Turek, M.
Żuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402214.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.49.Sf
68.55.Ln
82.80.Ms
85.40.Ry
Opis:
Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 864-866
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Characterization of Wide-Gap II-VI Epilayers
Autorzy:
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1946648.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.-i
71.55.Gs
Opis:
In this paper we review the properties of n-type doped ZnSe and CdTe epilayers grown by molecular beam epitaxy on (100) GaAs substrates. Recent results of photoluminescence, transport measurements, secondary ion mass spectroscopy and deep-level transient spectroscopy are discussed. A major emphasis is placed on the effect of different dopant species and the role of the deviation from stoichiometry on the doped epitaxial layers. Since deep defect states play an important role in determining the properties of the doped materials, considerable attention is directed towards characterization and identification of deep-lying defect states, both native and introduced by dopants. In particular, in the case of ZnSe the deep-level transient spectroscopy results clarify why Cl is superior to Ga as an effective n-type dopant. They provide strong evidence that chlorine - unlike Ga - does not introduce by itself any detectable deep defects into the ZnSe lattice. In the case of CdTe, we focus on the influence of the deviation from stoichiometric growth conditions in the molecular beam epitaxy process and on the properties of In doped layers. We discuss resistivity, Mn diffusivity and the presence of various deep defects in layers grown at different Cd/Te flux ratios.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 635-644
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Irradiation Dependence of Electrical Conductivity of $Fe^{3+}$ and $Ni^{2+}$ Doped Polyvinyl Alcohol Films
Autorzy:
Vijaya Kumar, G.
Chandramani, R.
Powiązania:
https://bibliotekanauki.pl/articles/1537708.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
72.80.Le
61.80.x
Opis:
PVA and doped PVA films were prepared by solution casting. The Change in electrical conductivity of pure PVA and transition elements $FeCl_3$ and $NiCl_2 \cdot 6H_2O$ doped PVA films with and without γ-irradiation in the temperature range 50-130°C has been investigated using four point probe technique. The dc electrical conductivity increases with increase in dopant concentration, with temperature and γ-irradiation. The results revealed that γ-irradiation enhances the electrical conductivity. The variation of electrical conductivity σ with temperature, before and after irradiation is due to the intermolecular hydrogen bonding between $Fe^{3+}$ with OH group of PVA and $Ni^{2+}$ with OH group of PVA. We found that $Fe^{3+}$ doped PVA films show higher conductivity than $Ni^{2+}$ doped PVA films.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 917-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964092.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz
Opis:
The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique
Autorzy:
Jia, Guo-Zhi
Yao, Jiang-Hong
Shu, Yong-Chun
Xing, Xiao-Dong
Pi, Biao
Powiązania:
https://bibliotekanauki.pl/articles/1808036.pdf
Data publikacji:
2009-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.55.Ln
68.65.Fg
68.65.Cd
Opis:
The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.
Źródło:
Acta Physica Polonica A; 2009, 115, 5; 944-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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