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Wyświetlanie 1-15 z 37
Tytuł:
Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors
Autorzy:
Remmouche, R.
Fates, R.
Bouridah, H.
Powiązania:
https://bibliotekanauki.pl/articles/1030066.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
73.20.At
73.40.Ty
73.63.Bd
Opis:
This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1230-1233
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anodic oxide films on niobium and tantalum in different aqueous electrolytes and their impedance characteristics
Autorzy:
Verma, N.
Singh, K.
Marí, B.
Mollar, M.
Jindal, J.
Powiązania:
https://bibliotekanauki.pl/articles/1075354.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
68.55.J-
68.60.Bs
Opis:
The anodic oxide films were prepared on the niobium and tantalum in aqueous electrolyte mixtures containing 1 M CH₃COOH + 1 M H₃PO₄ or 1 M CH₃COOH + 1 vol.% HF or 1 M CH₃COOH + 1 M H₃PO₄ + 1 vol.% HF at 30 V for 30 min. The barrier films were obtained on both niobium and tantalum surfaces in all electrolyte mixtures except niobium oxide film formed in 1 M CH₃COOH + 1 vol.% HF which is porous in nature. The anodic oxide films were characterized by FESEM. Also, electrochemical impedance spectroscopy at open-circuit potential on Nb and Ta was applied and obtained data were analyzed by fitting with four different equivalent circuits.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 297-303
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carbon Doped Austenitic Stainless Steel Coatings Obtained by Reactive Magnetron Sputtering
Autorzy:
Fryska, S.
Giza, P.
Jedrzejewski, R.
Baranowska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402218.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
68.60.Bs
68.55.J-
81.15.-z
Opis:
The paper presents the results of investigations of carbon doped austenitic stainless steel coatings (carbon S-phase) obtained by the reactive magnetron sputtering in the reactive atmosphere composed of argon and methane as a carbon source. Stainless steel targets were sputtered under different conditions. During the experiments the argon to methane proportion varied within a range 11/2-7/6. The other parameters such as temperature, pressure, sputtering power, etc. were kept constant. The phase composition was determined using the X-ray diffraction. Electron probe microanalysis (energy dispersive spectroscopy and wavelength dispersive spectroscopy) and glow discharge optical emission spectrometry techniques were used to study element composition of the coatings. Microstructure was investigated by scanning electron microscopy. It was found that varying the methane volume in the reactive atmosphere, it is possible to control the lattice parameter of the carbon S-phase.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Fe-Nb-B Base Hardfacing of Steel
Autorzy:
Kilinc, B.
Cegil, O.
Abakay, E.
Sen, U.
Sen, S.
Powiązania:
https://bibliotekanauki.pl/articles/1311693.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Kn
68.55.J-
81.65.Lp
Opis:
Recently hardfacing by welding has become a commonly used technique for improvement of material performance in extreme (high temperature, impact/abrasion, erosion, etc.) conditions. In the present study, three different alloy compositions of the Fe-Nb-B were used for hardfacing of the AISI 1020 steel by tungsten inert gas welding process and analyzed. The coatings were produced from a mixture of ferrous niobium, ferrous boron and iron powders in the range of - 45 μm particle size with different ratio. The coatings' thickness was set to 2-3 mm on the substrate. Microstructure, phase analysis and hardness of the manufactured hardfacing alloys were characterized. Deposition results indicate good quality thick coating and porosity free of the hardfacings. X-ray diffraction analyses showed that the alloyed layers include iron borides, FeNbB and iron phases. It was shown that surface alloyed layer has composite structure including steel matrix and well distributed boride phases.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 656-658
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Nitride Thin Films Using SEM and EDX
Autorzy:
Mammeri, F.
Chekour, L.
Rouag, N.
Powiązania:
https://bibliotekanauki.pl/articles/1399799.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
67.25.dp
68.55.J-
81.15.-z
68.37.Hk
68.90.+g
Opis:
The chromium nitride thin films have became more and more popular in the last years because of their very good physical, chemical and mechanical properties. The present study relates to thermal stability of hard thin films of chromium nitride CrN, carried out physical vapour deposition. We studied the influence of the annealing temperature on the morphology of CrN films, deposited on silicon substrate using magnetron sputtering. The characterizations are examined using scanning electron microscope equipped with energy dispersive X-ray spectroscopy. Annealing treatments in $N_2$ at 600-1000C for 1 h are performed on CrN coating samples for 530 nm thickness. At low temperature, the results show a thermal stability of these coatings. The $Cr_2O_3$ phase is completely replaced by the CrN phase at temperature above 1000°C. The results given by scanning electron microscopy-energy dispersive X-ray spectroscopy and X-ray diffraction are compared.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 294-295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnSe Nanolayers by Spectroscopic Ellipsometry
Autorzy:
Šćepanović, M.
Grujić-Brojčin, M.
Nesheva, D.
Levi, Z.
Bineva, I.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1795712.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
81.15.-z
81.05.Dz
78.30.-j
07.60.Fs
68.55.-a
Opis:
Single layers of ZnSe with thicknesses of 30, 40, 50, 70 and 100 nm are deposited at room substrate temperature by thermal evaporation of ZnSe powder in vacuum. The layers surface morphology has been investigated by atomic force microscopy. Structural characterization by the Raman scattering measurement revealed the existence of randomly oriented crystalline ZnSe particles in all layers, and the presence of amorphous phase in layers thinner than 100 nm. The ellipsometric measurements were performed in the range from 1.5 to 5 eV at room temperature in air. To interpret the experimental results, the Bruggeman effective medium approximation of dielectric function of ZnSe layers has been used, representing the layers as different mixtures of crystalline ZnSe (c-ZnSe), amorphous ZnSe (a-ZnSe), and voids. The assumption of polycrystalline ZnSe layers modeled as mixture of porous c-ZnSe (with volume fraction of voids ≈ 0.17) and a-ZnSe gives the best fit of ellipsometric experimental data. Single layer thicknesses similar to those expected from preparation conditions have been obtained by this fitting procedure. It has been also found that decrease in the layer thickness causes an increase of the volume fraction of a-ZnSe. Thus, c-ZnSe/a-ZnSe ratio, porosity and layer thickness obtained by spectroscopic ellipsometry, provides useful information about crystallinity and micro-/nanostructure of ZnSe nanolayers.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 708-711
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Corrosion Behavior of Nitride and Cr-Al-N Coatings Formed on AISI D2 Steel
Autorzy:
Kılınc, B.
Demirkiran, S.
Sen, U.
Sen, S.
Powiązania:
https://bibliotekanauki.pl/articles/1399749.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Kn
68.55.J-
81.65.Lp
Opis:
In the present work, the corrosion behavior of Cr-Al-N coating formed on the pre-nitrided AISI D2 cold work tool steel by thermo-reactive diffusion technique in the powder mixture consisting of ferro-chromium, aluminum, ammonium chloride and alumina at 1000C for 2 h was investigated. The phases formed in the coating layers were $Cr_2N$, $(Cr,Fe)_2N_{1-x}$, $AlN$, and $Fe_2N$ which were confirmed by X-ray diffraction analysis. The uncoated, nitrided, and Cr-Al-N coated specimens were placed in corrosive media (3.5 wt% salt solution). A standard saturated calomel electrode was used as a reference and graphite as a counter or auxiliary electrode. The effectiveness of the coatings in preventing corrosion was tested in the NaCl solution by electrochemical impedance studies using the Nyquist plots and potentiodynamic studies as well. Conclusively, the application of nitride and Cr-Al-N layers on AISI D2 steel increased its surface hardness and corrosion resistance. The corrosion resistance of Cr-Al-N coatings is higher than that of uncoated and nitrided steels.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 268-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profiling of Defects in He Implanted $SiO_2$
Autorzy:
Mariazzi, S.
Toniutti, L.
Brusa, R.
Duarte Naia, M.
Karbowski, A.
Karwasz, G.
Powiązania:
https://bibliotekanauki.pl/articles/1812538.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
68.55.-a
61.82.Ms
61.72.J-
Opis:
Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1447-1453
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DLC Coatings by $PI^{3}D:$ Low-Voltage žersus High-Voltage Biasing
Autorzy:
Ryoo, H.
Nikiforov, S.
Rim, G.
Shenderey, S.
Oh, H.
Chung, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807961.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.Dq
68.35.Gy
68.55.-a
78.30.-j
Opis:
Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition $(PI^{3}D)$ processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1146-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Trisodium Citrate on the Morphology and Luminescence Properties of Hydrothermally Synthesized YVO₄ Phosphor
Autorzy:
Zhang, Sa
Liang, Yan
Gao, Xiaoyong
Powiązania:
https://bibliotekanauki.pl/articles/1398668.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
61.05.cp
68.37.Hk
78.30.-j
Opis:
YVO₄ phosphors with different morphologies were synthesized by trisodium citrate (Na₃cit) surfactant-assisted hydrothermal process. Effects of molar ratio of $\text{cit}^{3-}$ to $Y^{3+}$ and pH value of reaction solution were intensively investigated on the morphologies, structures and luminescence properties of YVO₄ phosphor. The morphologies of the YVO₄ particles can be effectively controlled in strong acidic and strong alkaline environment by affecting the adsorption of $\text{cit}^{3-}$ on the (001) crystal plane of YVO₄. Strong acidic condition resulted into excessive adsorption of $\text{cit}^{3-}$ groups on the YVO₄ phosphor, which annihilated the superior luminescence of YVO₄ phosphors. On the contrary, strong alkaline condition does not result into the adsorption of $\text{cit}^{3-}$ groups. The synthesized YVO₄ phosphor without adsorption of $\text{cit}^{3-}$ groups showed superior luminescence even though the effective control of the morphology in alkaline condition is not so good as in strong acidic condition.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 79-83
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of Thermal Annealing and Film Thickness on the Structural and Morphological Properties of Titanium Dioxide Films
Autorzy:
Çörekçí, S.
Kızılkaya, K.
Asar, T.
Öztürk, M.
Çakmak, M.
Özçelík, S.
Powiązania:
https://bibliotekanauki.pl/articles/1491428.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
61.05.cp
68.37.Ps
Opis:
Titanium dioxide $(TiO_2)$ thin films having different thicknesses of 220, 260, and 300 nm were deposited onto well-cleaned n-type silicon substrates by reactive DC magnetron sputtering and annealed in the range of 200-1000C in steps of 200°C. The effects of thermal annealing and thickness variation on the crystalline quality and surface morphology of the films were investigated by X-ray diffraction and atomic force microscopy measurements. It was found that the film quality and morphology depend on the annealing temperature. $TiO_2$ films exhibit a grain-like surface morphology. The root-mean-square roughness and grain size on the surface increase as a result of increasing film thickness.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 247-248
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Capacitance of Porous Carbon Electrodes through Deposition of Small Amounts of NiO
Autorzy:
Kavaliauskas, Z.
Marcinauskas, L.
Valatkevicius, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503930.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.05.U-
82.47.Uv
68.55.J-
Opis:
Amorphous carbon and NiO/carbon composites were used as an electrode material for supercapacitors. The investigations were performed to evaluate the influence of the Ar/$C_2H_2$ ratio on the capacitance values of carbon and NiO/carbon electrodes. The surface morphology of the carbon electrodes changes from snowflake-like to columnar with the increase of the Ar/$C_2H_2$ ratio. The Raman scattering spectroscopy results demonstrated that the $I_{D}//I_{G}$ ratio decreases from 1.33 to 0.91 with the increase of the Ar/$C_2H_2$ ratio. It indicates the decrease of the sp^2 bonded carbon in the coatings. The specific capacitance of the carbon electrodes increases with the increase of the Ar/$C_2H_2$ ratio. The NiO/carbon electrodes show capacitance values 10 times larger as those of carbon electrodes. The largest specific capacitance of 27.7 F/g was obtained for NiO/carbon electrode, when carbon coating was deposited under Ar/$C_2H_2$=27.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 66-69
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation and Characterization of Carbon and Nickel Oxide/Carbon Composites for Supercapacitors
Autorzy:
Kavaliauskas, Z.
Marcinauskas, L.
Valatkevicius, P.
Powiązania:
https://bibliotekanauki.pl/articles/1506225.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.05.U-
68.55.J-
Opis:
In this study a carbon and NiO/carbon electrodes were prepared and investigated. The surface roughness increases with the increase of the torch power. The addition of the NiO changes the surface structure from a snowflake-like to a mesh-like. It was demonstrated that the addition of the nickel oxide to amorphous carbon increases the specific capacitance of composite electrode. However, the NiO/carbon electrodes have a lower breakdown voltage values and longer charge-discharge cycles.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 253-255
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound
Autorzy:
Saloum, S.
Alkhaled, B.
Powiązania:
https://bibliotekanauki.pl/articles/1538698.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.Ds
52.70.Kz
81.15.Gh
68.43.-h
68.55.J-
Opis:
Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in $N_{2}$/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas ($NH_{3},$ $CO_{2}$ and $O_{2}$) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 484-489
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
Autorzy:
Łuka, G.
Krajewski, T.
Szczerbakow, A.
Łusakowska, E.
Kopalko, K.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Fidelus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811956.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
73.40.Lq
81.05.Lg
Opis:
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1229-1234
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 37

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