Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "68.55.-a" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 112
Tytuł:
XPS and UPS Valence Band Studies of Nanocrystalline Ni-Ti Alloy Thin Films
Autorzy:
Pacanowski, S.
Skoryna, J.
Szajek, A.
Marczyńska, A.
Dawczak-Dębicki, H.
Werwiński, M.
Majchrzycki, Ł.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1030748.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
68.55.-a
82.80.Pv
Opis:
In this contribution we study valence bands of in-situ prepared nanocrystalline NiTi and Ni₃Ti alloy thin films using X-ray and ultraviolet photoelectron spectroscopy. Additionally, theoretical valence band of NiTi alloy was calculated by ab-initio methods. The structure and morphology of the samples were studied by X-ray diffraction and atomic force microscopy, respectively. Furthermore, hydrogen absorption and desorption kinetics at a pressure of about 1000 mbar were studied in Pd covered nanocrystalline NiTi alloy thin film using four-point resistivity measurements. Results showed that modifications of the valence bands of the Ni-Ti thin films due nanocrystalline structure can influence on the room temperature hydrogen absorption and desorption kinetics.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 613-616
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers
Autorzy:
Krupiński, M.
Kąc, M.
Polit, A.
Zabila, Y.
Zając, D.
Marszałek, M.
Kapusta, Cz.
Dobrowolska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1809826.pdf
Data publikacji:
2009-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cj
68.55.-a
68.65.Ac
Opis:
The atomic environment of Bi atoms in the Co/Cu multilayered system was studied with X-ray absorption fine structure spectroscopy. Experiments were carried out on a Co(1 nm)/Cu(2 nm) system with 5 and 10 repetitions of Co/Cu evaporated with very low deposition rate in ultrahigh vacuum. A very small amount of Bi (0.06 nm) was deposited on each Cu film in the system. The X-ray absorption fine structure spectra were measured at the $BiL_3$ edge in the X-ray absorption near-edge structure and extended X-ray absorption fine structure ranges at the Beamline X1 of HASYLAB/DESY synchrotron laboratory in Hamburg. The experimental data showed different local neighbourhood of Bi, depending on the number of Co/Cu bilayer repetitions. The results are discussed in terms of the location and segregation of the Bi atoms as well as its possible oxidation ways.
Źródło:
Acta Physica Polonica A; 2009, 115, 2; 565-567
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Misiuk, A.
Barcz, A.
Bryja, L.
Popov, V. P.
Powiązania:
https://bibliotekanauki.pl/articles/2035493.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
61.46.+w
Opis:
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10$\text{}^{16}$ cm$\text{}^{-2}$ were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Characterization of Films Formed by Pulsed Laser Deposition on Cold Substrates from YBaCuO Targets
Autorzy:
Pełka, J. B.
Paszkowicz, W.
Gierłowski, P.
Lewandowski, S. J.
Zieliński, M.
Barbanera, S.
Knapp, M.
Powiązania:
https://bibliotekanauki.pl/articles/2030707.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.38.Mf
81.15.-z
68.55.-a
Opis:
Grazing-incidence X-ray diffraction supplemented with atomic force microscopy and secondary ion mass spectroscopy were applied to the characterization of films deposited by laser ablation on cold substrates from YBaCuO targets and subsequently irradiated with additional laser pulses of lower energy density. Evolution of X-ray diffraction pattern was observed as a function of irradiation dose. For the as-deposited films the pattern was typical of the amorphized solids. For the films irradiated with doses higher than the threshold, the pattern was enriched with the diffraction peaks, whose general features, like peak positions, widths and relative intensities were almost independent of the dose. The size of the crystallites was deduced from the peak widths to be not smaller than 12-16 nm. Comparison of the pattern with patterns of known phases indicates that, apart of the amorphous component, a structure with an admixture of some new metastable or high temperature phase(s) is formed during the process of pulsed laser annealing. The atomic force microscopy observations revealed that the surface roughness shows a pronounced minimum at low irradiation doses. The secondary ion mass spectroscopy investigation confirms that the strongest chemical changes (increase in concentration of yttrium and copper) due to irradiation with higher doses are observed in the near-surface film material.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 787-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method
Autorzy:
Auleytner, J.
Dziuba, Z.
Górecka, J.
Pełka, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1931657.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
61.10.-i
68.55.-a
Opis:
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 567-574
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Absorption Fine Structure Investigation of the Low Temperature Grown ZnCoO Films
Autorzy:
Wolska, A.
Klepka, M.
Witkowski, B.
Witkowski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431568.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
68.55.-a
Opis:
ZnO based diluted magnetic semiconductors are intensively investigated for possible spintronic applications. In the present work we investigate the ZnCoO layers grown at low temperature by atomic layer deposition. The local atomic structure of a series of layers with different Co concentration is investigated by the X-ray absorption fine structure measurements. Two groups of ZnCoO layers are investigated - the ones with an uniform Co distribution and highly nonuniform films. For uniform samples we observe that a majority of Co atoms is built into the ZnO matrix substituting the Zn atoms. In contrast, for the nonuniform samples, metallic Co inclusions are also observed. These results are in strong correlation with the magnetic properties of the films studied separately. Samples with the uniform Co distribution (Co substitutes Zn in ZnO) are paramagnetic, whereas the nonuniform ones show a ferromagnetic response.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures
Autorzy:
Mróz, S.
Stachnik, B.
Powiązania:
https://bibliotekanauki.pl/articles/1892480.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 233-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Magnetic Properties of Rare Earth Compounds Epitaxially Grown on Semiconductors
Autorzy:
Chroboczek, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1888050.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
68.55.-a
75.50.Pp
Opis:
Growth, crystallographic structure, electrical transport and magnetic properties of cubic Er pnictides and hexagonal Er silicide layers, epitaxially grown on semiconductors, are reviewed. Magnetoresistance anomalies observed at low temperatures are discussed in terms of a model developed for electron-magnetic moment interactions in antiferromagnetic systems.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 179-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films
Autorzy:
Benzhour, K.
Szatkowski, J.
Rozpłoch, F.
Stec, K.
Powiązania:
https://bibliotekanauki.pl/articles/1535896.pdf
Data publikacji:
2010-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.A-
Opis:
Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2010, 118, 3; 447-449
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Magnetisation Reversal and GMR in Spin Valve Structures
Autorzy:
Stobiecki, F.
Stobiecki, T.
Ocker, B.
Maass, W.
Powroźnik, W.
Paja, A.
Loch, C.
Röll, K.
Powiązania:
https://bibliotekanauki.pl/articles/2013156.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Pa
68.55.Ln
68.55.-a
Opis:
Temperature measurements of magnetisation reversal, resistance and magnetoresistance of Co/Cu/Co/FeMn spin valve structures deposited in different conditions were performed. The influence of exchange anisotropy energy, interlayer coupling energy, and electron transport properties were taken into consideration in explaining differences in giant magnetoresistance effect of investigated samples.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 523-526
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Ag Film Roughening during Deposition on Quasicrystal and Approximant Surfaces
Autorzy:
Ünal, B.
Evans, J.
Thiel, P.
Powiązania:
https://bibliotekanauki.pl/articles/1373681.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
61.44.Br
68.37.Ef
81.15.Aa
Opis:
The temperature (T) dependence of roughening as assessed by scanning tunneling microscopy is compared for growth of Ag films on an 5-fold icosahedral Al-Pd-Mn quasicrystal surface and on an ξ'-approximant. Growth on the quasicrystal corresponds to a version of the Volmer-Weber growth, but modified by quantum size effects, and also by kinetic smoothening at low T and low coverages (θ). Growth on the approximant corresponds to a version of the Stranski-Krastanov growth modified by kinetic roughening at low T and low θ. For larger θ, i.e., for thicker films, distinct behavior is observed.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 608-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of PbTiO₃ Thin Films by Annealing Multilayer Oxide Structures in Vacuum
Autorzy:
Iljinas, A.
Stankus, V.
Powiązania:
https://bibliotekanauki.pl/articles/1398677.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
Opis:
This article presents investigation of syntheses of perovskite PbTiO₃ thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum $(p=5 \times 10^{-3} Pa)$. The film stoichiometry was accurately controlled by the deposition of individual layers with the required ( ≈1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670°C and 770°C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300°C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO₃ phase with tetragonality c/a=1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670°C temperature.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 121-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Iljinas, A.
Burinskas, S.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503904.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
78.20.-e
Opis:
In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 60-62
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Self-Diffusion of Iridium: Field Electron Emission Study
Autorzy:
Antczak, G.
Błaszczyszyn, M.
Błaszczyszyn, R.
Powiązania:
https://bibliotekanauki.pl/articles/2014253.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
68.35.Fx
68.90.+g
68.55.-a
Opis:
The self-diffusion of iridium was studied by means of field electron microscopy. The measurements, based on the well-known process of surface build-up, were carried out under the UHV conditions within the temperature range of 790-935K. The activation energy for the diffusion was determined to be equal to 2.10±0.10eV/atom (48.4±2.3kcal/mol). This value is compared with activation energies for self-diffusion on other metal surfaces, as well as with those for self-diffusion of single iridium atoms and clusters on iridium, known from the field ion microscopy measurements.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 383-388
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Thermal Annealing Effect on the Properties of Silver Thin Films Prepared by DC Magnetron Sputtering
Autorzy:
Hajakbari, F.
Ensandoust, M.
Powiązania:
https://bibliotekanauki.pl/articles/1186936.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.cd
81.40.-z
68.55.-a
68.60.-p
Opis:
Silver nanoparticles have potential applications in fields of nanosicence and technology. In this work, polycrystalline silver (Ag) thin films were deposited on quartz substrates by DC magnetron sputtering method at the same deposition conditions and then, the Ag films were annealed in oxygen atmosphere for 65 min at different annealing temperatures namely 300, 400, 500 and 600°C. The crystal structure of the films was evaluated by X-ray diffraction. The atomic force microscopy and scanning electron microscopy were employed for surface morphological studies of the films. Normal-incidence transmittance over the wavelength range of 200-2500 nm was measured using a spectrophotometer. The results show that the crystallization of the films increases after annealing and that the Ag films without annealing have lowest roughness. Annealing temperature effectively influences the surface morphology of the films. Optical studies reveal that the as-deposited Ag film has metallic behavior with zero transmittance and after annealing, the transmittance increases due to the formation of silver oxide phases in the films.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 680-682
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 112

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies