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    Wyświetlanie 1-11 z 11
    Tytuł:
    Ion Beam Sputtering Monitored by Optical Spectroscopy
    Autorzy:
    El Fqih, M.
    Fournier, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808025.pdf
    Data publikacji:
    2009-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    79.20.Rf
    Opis:
    Optical spectroscopy gives a simple means to follow the evolution of the surface composition during ion beam sputtering. This is illustrated by three examples: air oxidised metals (Al and Cu), various CuAl alloys and the $Cu_{98}Be_2$ alloy. Several time scales are distinguished, corresponding to different processes: the elimination of surface contaminants, the removal of the corroded layer. The implications for the use of ion beam optical spectroscopy in surface analysis are discussed.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 5; 901-904
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inelastic X-Ray Scattering Studies of Phonon Dispersion in PbTe and (Pb,Cd)Te Solid Solution
    Autorzy:
    Kuna, R.
    Minikayev, R.
    Trzyna, M.
    Gas, K.
    Bosak, A.
    Szczerbakow, A.
    Petit, S.
    Łażewski, J.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398584.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.D-
    68.43.-h
    68.49.Sf
    Opis:
    PbTe and its solid solution (Pb,Cd)Te containing 2% of CdTe and PbTe grown by self-selecting vapour growth technique were investigated by inelastic X-ray scattering using synchrotron radiation. The ID28 beamline at ESRF with the incident photon energy of 17794 eV and the energy resolution of 3 meV was applied for that purpose. The measurements were performed at room temperature along [001]-type high symmetry direction in the Brillouin zone. In spite of a very low energy of phonon branches they can be determined by inelastic X-ray scattering with a high accuracy. The transversal acoustic phonon dispersion obtained by inelastic X-ray scattering corresponds well to those resulting from inelastic neutron scattering measurements and ab initio calculations. Apart from expected structures corresponding to the bulk phonons an additional scattering related to the crystal surface properties was observed in the inelastic X-ray scattering spectra. The analysis performed with the use of secondary ion mass spectroscopy technique demonstrated a presence of a thin oxide layer at sample surfaces.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1251-1254
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channelling of H$\text{}^{0}$ and H$\text{}^{+}$ in Si Single Crystal
    Autorzy:
    Moneta, M.
    Gront, K.
    Gwizdałła, T.
    Czerbniak, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035636.pdf
    Data publikacji:
    2002-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.85.+p
    68.49.Sf
    61.80.Lj
    Opis:
    The differences in the Rutherford backscattering angular spectra measured for 100 keV hydrogen atoms H$\text{}^{0}$ and protons H$\text{}^{+}$ backscattered from Si crystal are reported and analysed. It was shown that the H$\text{}^{0}$ atom beam is better channelled in the pure crystal and is much more sensitive to the crystal surface coverage, particularly Au layer than the H$\text{}^{+}$ ion beam. The deep crystal regions seem to strengthen this differences.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 6; 759-766
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
    Autorzy:
    Borysiewicz, M.
    Kamińska, E.
    Piotrowska, A.
    Pasternak, I.
    Jakieła, R.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811915.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.49.Sf
    68.55.ag
    81.40.Ef
    Opis:
    Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1061-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering
    Autorzy:
    Průša, S.
    Kolíbal, M.
    Bábor, P.
    Mach, J.
    Šikola, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047292.pdf
    Data publikacji:
    2007-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    81.05.Cy
    68.55.-a
    81.15.Ef
    Opis:
    In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 3; 335-341
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Molecular Dynamics Simulations of Energetic Ar Cluster Bombardment of Ag(111)
    Autorzy:
    Palka, G.
    Rzeznik, L.
    Paruch, R.
    Postawa, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400436.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    82.80.Ms
    83.10.Rs
    79.20.Rf
    Opis:
    Large-scale molecular dynamics computer simulations are used to investigate the dynamics of material ejection during high-energy $Ar_n$ cluster bombardment of Ag(111) at normal incidence. The silver sample containing 7 million atoms is bombarded with $Ar_n$ projectiles (n=45-30000) with kinetic energy spanning from a few keV up to 1 MeV. Such a wide range of projectile parameters allows probing processes taking place during low-density collision cascade as well as during high-density events characteristic of micrometeorite bombardment in space. The material modifications and total sputtering yield of ejected particles are investigated. While at low-energy impacts, ejection of individual silver atoms is the main emission channel, the ejection of large clusters from the corona of the created crater dominates for the high-energy impacts.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 831-833
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of High-Temperature-Grown GaMnSb/GaSb
    Autorzy:
    Romanowski, P.
    Bak-Misiuk, J.
    Dynowska, E.
    Domagala, J.
    Sadowski, J.
    Wojciechowski, T.
    Barcz, A.
    Jakiela, R.
    Caliebe, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539009.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.37.Hk
    68.49.Sf
    68.55.ag
    68.55.Ln
    Opis:
    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 341-343
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sputtering of Benzene Sample by Large Ne, Ar and Kr Clusters - Molecular Dynamics Computer Simulations
    Autorzy:
    Rzeznik, L.
    Paruch, R.
    Garrison, B.
    Postawa, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400433.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    82.80.Ms
    83.10.Rs
    61.82.Pv
    79.20.Rf
    Opis:
    Molecular dynamics simulations are employed to probe the role of an impact angle on emission efficiency of organic molecules sputtered from benzene crystal bombarded by 15 keV $Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$ clusters. It is found that both the cluster type and the angle of incidence have significant effect on the emission efficiency. The shape of the impact angle dependence does not resemble the dependence characteristic for medium size clusters ($C_{60}$, $Ar_{366}$), where sputtering yield only moderately increases with the impact angle, has a shallow maximum around 40° and then decreases. On the contrary, for the large projectiles ($Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$) the emission efficiency steeply increases with the impact angle, has a pronounced maximum around 55° followed by rapid signal decay. It has been found that the sputtering yield is the most sensitive to the impact angle change for Kr cluster projectiles, while change of the impact angle of Ne projectile has the smallest effect on the efficiency of material ejection.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 825-827
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Arrays of Metal Nanostructures Produced by Focussed Ion Beam
    Autorzy:
    Luches, P.
    di Bona, A.
    Contri, S.
    Gazzadi, G.
    Vavassori, P.
    Albertini, F.
    Casoli, F.
    Nasi, L.
    Fabbrici, S.
    Valeri, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814039.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.50.Bb
    75.75.+a
    78.20.Ls
    68.49.Sf
    Opis:
    We present a study of the magnetic properties of arrays of nanostructures produced in a focussed ion beam-scanning electron microscope dual beam system. The single magnetic units have been isolated either by direct removal of parts of the metallic film or by local modification of the film magnetic properties. The final quality of the shape and the residual damage strictly depend on beam parameters (spot size and pixel dwell time) and on the swelling properties of the patterned materials. On square Fe(001) elements with a well-defined intrinsic (magnetocristalline) and shape- and size-induced (shape plus configurational) anisotropy we show that the overall magnetic anisotropy is not a mere superposition of the individual contributions. We also demonstrate that with ion irradiation doses below the milling threshold $L1_0$ FePt films with perpendicular magnetic anisotropy undergo a transition from the magnetically hard $L1_0$ phase to the magnetically soft A1 phase leading to an out-of-plane to in-plane spin reorientation. The magnetic properties of the planar arrays obtained by local modification of the film are compared to arrays of sculpted structures of the same material.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1297-1312
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
    Autorzy:
    Borysiewicz, M. A.
    Pasternak, I.
    Dynowska, E.
    Jakieła, R.
    Kolkovski, V.
    Dużyńska, A.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048109.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    61.05.cp
    68.37.Hk
    68.37.Ps
    68.49.Sf
    78.55.Et
    Opis:
    ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 686-688
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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