Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "68.35.Fx" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-18 z 18
    Tytuł:
    Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
    Autorzy:
    Guziewicz, E.
    Szamota-Sadowska, K.
    Kowalski, B. J.
    Grodzicka, E.
    Story, T.
    Orłowski, B. A.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963380.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.60.-i
    Opis:
    We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 783-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission
    Autorzy:
    Guziewicz, E.
    Kowalski, B. J.
    Gołacki, Z.
    Orłowski, B. A.
    Johnson, R. L.
    Masek, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968113.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.60.-i
    Opis:
    A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te crystal.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 793-796
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stability and Band Offsets of Heterovalent SiC/GaN Interfaces
    Autorzy:
    Städele, M.
    Majewski, J. A.
    Vogl, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934004.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    73.20.Dx
    Opis:
    We present first-principles calculations of structural and electronic properties of heterovalent SiC/GaN [001] interfaces. We have investigated interfaces consisting of one and two mixed layers with lateral c(2 × 2), 2 × 1, 1 × 2, 2 × 2 arrangements. Abrupt polar [001] interfaces are energetically unstable with respect to reconstruction. The preferred bonding configurations are found to be Si-N and Ga-C, which correspond to cation-anion bonding. The valence band offsets of the energetically most favorable structures are 1.39 eV for the interface with a mixed Ga/Si layer and 0.45 eV with a mixed C/N layer, with the top of the valence band lying higher in SiC.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 917-920
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Field Stimulated Surface Diffusion of Lithium on Germanium (100) and (111) Planes
    Autorzy:
    Suchorski, Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/1892563.pdf
    Data publikacji:
    1992-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.70.+q
    68.35.Fx
    Opis:
    Field stimulated surface diffusion of lithium on atomically clean (100) and (111) germanium single crystal planes has been investigated by means of field emission method. Sealed-off field emission tube with a channel multiplier was used. The surface density of lithium adatoms on the germanium surface was determined applying a standard tungsten (112) crystal plane. The dependences of the surface diffusion activation energy on the applied electric field at different lithium coverages lave been obtained. The initial dipole moment of Li adatoms on the Ge (100) and (111) planes was then determined. The values 1.3 ± 0.2 and 1.0 ± 0.2 debye obtained for the Li-Ge (100) and Li-Ge (111) systems respectively are in good agreement with the ones calculated from the work function measurements. The reverse effect of the field influence on the surface diffusion of lithium on Ge (100) and (111) planes has been observed as the second lithium layer is filling. Relative contributions of the peculiarities of semiconductor substrate and alkali adsorbate on the properties of adsystems are discussed on the basis of experimental results.
    Źródło:
    Acta Physica Polonica A; 1992, 81, 2; 295-302
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Microstructural Transformation in TBCs Consisting of NiCrAlY Metallic Bond Coat and YSZ Ceramic Top Coat after Oxidation at 900°C
    Autorzy:
    Parlakyigit, A.
    Karaoglanli, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1194952.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    68.37.Hk
    81.15.Rs
    Opis:
    Thermal barrier coatings are applied to aeronautical and industrial gas turbine components to protect from detrimental effects of hot gases. Thermal barrier coating systems are generally composed of a substrate material, an oxidation resistant metallic bond coat, and a thermal protective ceramic-based topcoat. Additionally, thermally grown oxide layer is formed at ceramic/bond coat interface as a result of exposure of bond coat to high temperature. Oxidation mechanism is one of the major failure mechanisms of thermal barrier coatings. Thermally grown oxide layer plays significant role as a oxygen barrier, but rapid thickening of thermally grown oxide leads to spallation failure of thermal barrier coatings. In this study, thermally grown oxide growth behavior was investigated at isothermal oxidation condition to evaluate durability of the thermal barrier coating system. The thermal barrier coating system consists of yttria stabilized zirconia (YSZ) topcoat and NiCrAlY bond coat deposited on Inconel 718 superalloy with atmospheric plasma spray technique. After coating process, specimens were exposed to 900C air atmosphere for different periods up to 50 h. Ceramic/bond coat interface and thermally grown oxide layer were examined using scanning electron microscopy analysis. Besides, porosity contents and microhardness measurements were carried out to determine strength of coating. The results showed that thickness of thermally grown oxide layer increased and porosity rates of ceramic layer decreased with the effect of oxidation. Accordingly, the ceramic layer hardness increased due to high temperature effect.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 232-234
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interface Properties of Single and Bi-Layer $Fe_3O_4$ Films Grown on MgO(001) Studied by RBS and Channeling Experiments
    Autorzy:
    Kim-Ngan, N.
    Balogh, A.
    Brötz, J.
    Zając, M.
    Korecki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535628.pdf
    Data publikacji:
    2010-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.35.+a
    68.35.Ct
    68.35.Fx
    68.47.Gh
    Opis:
    Series of $Fe_3O_4$/MgO(001) and $Fe_3O_4$/Fe/MgO(001) films (single- and bi-layer films, respectively) with a total layer thickness in the range of 20 ÷ 150 nm were investigated by the Rutherford backscattering spectrometry (2 MeV $He^{+}$ ion beam), by the Rutherford backscattering spectrometry channeling experiments (1.5 MeV $He^{+}$ ion beam). Depending on the layer thickness of each layer and the film geometry, a single Fe peak and/or a double-anomaly feature was revealed in the Rutherford backscattering spectra. For all films no magnesium presence in the surface layer was observed. For both single- and bi-layer films with a total layer thickness less than 60 nm only one minimum was observed in the channeling curves, while a double minimum was revealed for the bi-layer films with a larger thickness. X-ray reflectometry measurements have revealed that the film density is the same as that of the bulk one.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 4; 570-575
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interfaces in Composite Materials
    Autorzy:
    Pippel, E.
    Woltersdorf, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945175.pdf
    Data publikacji:
    1996-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Bg
    68.35.Fx
    81.60.Dq
    Opis:
    The mechanical functions of the fibre/matrix interlayer as well as its quantitative parameter dependencies and their influence on the properties of the composite system are discussed, with the theoretical model being considered under realistic conditions. Corresponding to that a number of interface structure phenomena of some advanced composite materials, revealed by high voltage and high resolution electron microscopy, are discussed with respect to their relevance to the control of composite properties, including complex interlayer systems, which are produced by fibre coating as well as by chemical solid state transport and exchange reactions. The effects of hooking-together, binding, internal microcracking, and sublayer formation are demonstrated, and in some cases correlated with the mechanical behaviour of the materials as revealed by in situ tensile tests.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 2; 209-218
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Adsorption of H$\text{}_{2}$O on Pt Field Emitter: Surface Diffusion and Field-Induced Effects
    Autorzy:
    Blaszczyszynowa, M.
    Błaszczyszyn, R.
    Bryl, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933649.pdf
    Data publikacji:
    1995-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.90.+b
    68.35.Fx
    79.70.+q
    Opis:
    Adsorption of an Η$\text{}_{2}$O layer onto a Pt field emitter tip under the influence of an electric field and the surface diffusion of water were studied by using the field electron microscopy method. The presence of a negative field (field electron microscopy mode of operation), examined in the range of 33-44 MV/cm, significantly reduced the water coverage on the emitter at temperatures above 120 K. The reduction could also occur upon drawing a high density field emission current when the emitter was kept at 78 K. Surface diffusion of water, which was observed in the temperature range 120-132 K, corresponded to the "unrolling the carpet" mechanism and started from a water multilayer to a surface region water- and/or hydrogen-submonolayer covered. This was accompanied by the transition process from the state of the current- and field-induced redistribution of Η$\text{}_{2}$O to the state of thermal equilibrium. The activation energy of the diffusion was found to be 19 and 25 kJ/mol depending on the crystallographic direction. A positive electric field of 44 MV/cm, which was applied at temperatures of the substrate in excess of 121 K, decreased the field emission of the system and raised the desorption temperature of the layer over 720 K. It is assumed that the negative electric field causes reorientation of Η$\text{}_{2}$O molecules at the surface of platinum tip. The positive as well as negative electric fields promote the field desorption of water, which is in accordance with the results reported before.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 3; 511-526
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fraction of Positronium Formation at Semiconductor Surface
    Autorzy:
    Shrivastava, S. B.
    Upadhyay, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2010960.pdf
    Data publikacji:
    1999-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    71.60.+z
    68.35.Fx
    Opis:
    The fraction of positronium formation (f$\text{}_{ps}$) has been calculated in Ge(110), Ge(111), Si(110) and Si(111) surfaces by solving the diffusion equation for positrons in semiconductors and by setting up the rate equation to describe the processes that are supposed to occur when a thermalised positron encounters the surface including the trapping of positrons in neutral and negative vacancies. Certain parameters used in the evaluation of f$\text{}_{ps}$, e.g., the bulk annihilation rate (λ$\text{}_{s}$), the positron diffusion length (L$\text{}_{+}$), the diffusion coefficient (D$\text{}_{+}$) and the implantation profile parameter (A), have been taken from the experiments. The calculated values of f$\text{}_{ps}$ as a function of incident positron energy and temperature in Ge(110) and Si(111) have been compared with the experimental results. It has been found that in general the calculated results are in good agreement with the experimental ones. The calculation also confirms that the trapping rate of positrons into negative vacancy has a T$\text{}^{-1}\text{}^{/}\text{}^{2}$ dependence with respect to the temperature.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 6; 1005-1012
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Boriding of Equiatomic Fe-Mn Binary Alloy
    Autorzy:
    Calik, A.
    Gencer, Y.
    Tarakci, M.
    Gunduz, K.
    Gulec, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400031.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.-z
    81.05.Bx
    68.35.Fx
    Opis:
    Synthetic equiatomic Fe-Mn binary alloy was prepared under vacuum-argon controlled atmosphere. Fe-Mn alloy samples were boronized using the commercial Ekabor II powder at 900°C, 1000C and 1100C for 3 h. The borided samples were characterized by X-ray diffraction, scanning electron microscopy-energy dispersive spectroscopy, and profilometry. The boride layers were composed of $FeB$, $MnB$, $MnB_2$ and $Fe_2B$ phases for the samples borided at 1000C and 1100C while the sample borided at 900C was composed of only FeB and MnB. The boride layer was well adhered to the substrate with saw-tooth like morphology however some discontinuous band of cracks were observed in the boride layer. The concentration ratio of Fe and Mn were equal along the thickness of the coating though in some areas their ratio interchanged. The boride layer thickness and surface roughness increased with boronizing temperature.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 449-452
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanical Properties of Boronized AISI 316, AISI 1040, AISI 1045 and AISI 4140 Steels
    Autorzy:
    Calik, A.
    Sahin, O.
    Ucar, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808113.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.-x
    62.20.Qp
    68.35.Fx
    Opis:
    In this study, some mechanical properties of borided and unborided four steels were investigated. Boronizing of steels was performed by powder pack method at 1210 K for 4 h. The hardness of borides, boride layer thickness and room temperature tensile properties were measured and it was observed that hardness and tensile properties strongly depend on chemical composition of steels. In addition, the effect of a notch on impact behavior was examined by conducting the Charpy tests on borided and unborided steels. The greatest notch toughness was found for a steel AISI 316 with a microstructure consisting of different C, Ni and Cr chemical composition compared to AISI 1040, 1045 and 4140 steels.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 694-698
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Diffusion of Potassium on Nickel
    Autorzy:
    Błaszczyszynowa, M.
    Błaszczyszyn, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1892562.pdf
    Data publikacji:
    1992-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.70.+g
    79.90.+b
    Opis:
    The surface diffusion of a potassium dose corresponding to the average coverage Θ̅$\text{}_{K}$ = 1.5 on nickel was studied using the field emission technique in the temperature range of 78-133 K. In general, under such conditions diffusion proceeds with the sharp moving boundary and the activation energy Q from 0.16 eV to 0.36 eV dependently on the crystallographic directions. Free boundary migration with the energy Q < 0.16 eV is expected on the close-packed regions {111} and {001} already at liquid N$\text{}_{2}$ temperature. The results are discussed in relation to the atomic structure of the nickel substrate taking into account the interaction in the adsorption layer.
    Źródło:
    Acta Physica Polonica A; 1992, 81, 2; 285-294
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Models for the Interpretation of the Different Interfaces Sb/InP(I00) Using Quantitative Results of AES and EELS
    Autorzy:
    Gruzza, B.
    Porte, A.
    Bideux, L.
    Jardin, C.
    Miloua, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1892478.pdf
    Data publikacji:
    1992-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Bs
    68.35.Fx
    72.80.Ey
    82.80.Pv
    Opis:
    The model of quantitative interpretation of Auger electron spectroscopy (AES) results is described and some complementary electron energy loss spectroscopy (EELS) results are also reported. It is shown that the InP(100) surfaces perturbed by the Ar$\text{}^{+}$ cleaning treatment can be ordered by Sb deposition. The variations of different Auger lines are interpreted, and the transformations 3D → 2D of the initially formed In clusters can be well-followed during the first stages of the deposition.
    Źródło:
    Acta Physica Polonica A; 1992, 81, 2; 223-231
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface Self-Diffusion of Iridium: Field Electron Emission Study
    Autorzy:
    Antczak, G.
    Błaszczyszyn, M.
    Błaszczyszyn, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014253.pdf
    Data publikacji:
    2000-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.-d
    68.35.Fx
    68.90.+g
    68.55.-a
    Opis:
    The self-diffusion of iridium was studied by means of field electron microscopy. The measurements, based on the well-known process of surface build-up, were carried out under the UHV conditions within the temperature range of 790-935K. The activation energy for the diffusion was determined to be equal to 2.10±0.10eV/atom (48.4±2.3kcal/mol). This value is compared with activation energies for self-diffusion on other metal surfaces, as well as with those for self-diffusion of single iridium atoms and clusters on iridium, known from the field ion microscopy measurements.
    Źródło:
    Acta Physica Polonica A; 2000, 98, 4; 383-388
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO$\text{}_{2}$ Matrix
    Autorzy:
    Zhuravlev, K.
    Tyschenko, I.
    Vandyshev, E.
    Bulytova, N.
    Misiuk, A.
    Rebohle, L.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035528.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ac
    73.63.Bd
    78.67.-n
    68.35.Fx
    Opis:
    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO$\text{}_{2}$ films was studied. A "blue"-shift of PL spectrum from the SiO$\text{}_{2}$ films implanted with Si$\text{}^{+}$ ions to total dose of 1.2×10$\text{}^{17}$ cm$\text{}^{-2}$ with an increase in hydrostatic pressure was observed. For the films implanted with Si$\text{}^{+}$ ions to a total dose of 4.8×10$\text{}^{16}$ cm$\text{}^{-2}$ high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 337-344
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Hardness and Wear Behaviour οf Boronized and Carburized AISI 8620 Steels
    Autorzy:
    Calik, A.
    Duzgun, A.
    Ekinci, A.
    Karakas, S.
    Ucar, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1585043.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.-x
    62.20.M-
    62.20.Qp
    68.35.Fx
    Opis:
    In this study, the hardness and wear behaviour of carburized and boronized AISI 8620 steels have been studied. The boronizing treatment increased the hardness of AISI 8620 steels from 395 $HV_{0.1}$ to a maximal 1610 $HV_{0.1}$ compared to the carburized steels and also significantly improved its wear behaviour. From obtained results, it can be concluded that boronizing is very effective surface hardening method for improving the wear properties of AISI 8620 steels.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 6; 1029-1032
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Electron Microscopy Studies of Kr$\text{}^{+}$-Implanted Silicon
    Autorzy:
    Morawiec, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931308.pdf
    Data publikacji:
    1994-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Bg
    61.72.Ff
    61.72.Qq
    61.72.Tt
    68.35.Fx
    81.40.Gh
    Opis:
    The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E$\text{}_{i}$ = 150 keV, T$\text{}_{i}$ = RT, D$\text{}_{1}$ = 5 × 10$\text{}^{15}$, D$\text{}_{2}$ = 1 × 10$\text{}^{16}$ and D$\text{}_{3}$ = 5 × 10$\text{}^{16}$ cm$\text{}^{-2}$) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 5; 819-824
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods
    Autorzy:
    Klinger, D.
    Lefeld-Sosnowska, M.
    Pełka, J. B.
    Paszkowicz, W.
    Gierłowski, P.
    Pankowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030709.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.10.Kw
    61.72.Tt
    68.35.Fx
    81.40.Ef
    81.65.Mq
    Opis:
    This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si$\text{}^{2+}$ ions of energy 140 keV and doses from 1×10$\text{}^{15}$ to 1× 10$\text{}^{16}$ ions/cm$\text{}^{2}$. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 795-801
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-18 z 18

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies