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Wyświetlanie 1-3 z 3
Tytuł:
Investigation of Gold Nanolayer Properties Using X-Ray Reflectometry and Spectroscopic Ellipsometry Methods
Autorzy:
Stabrawa, I.
Banaś, D.
Dworecki, K.
Kubala-Kukuś, A.
Braziewicz, J.
Majewska, U.
Wudarczyk-Moćko, J.
Pajek, M.
Góźdź, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398825.pdf
Data publikacji:
2016-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
62.23.St
68.55.-a
81.07.-b
Opis:
X-ray reflectometry and spectroscopic ellipsometry methods were applied for determination of physical properties of gold nonolayers. The nanolayers were prepared by sputtering of gold on different substrates: borosilicate glass, polished crystalline quartz and crystalline silicon. With X-ray reflectometry technique roughness of the substrates and density, thickness and roughness of gold layers were determined. The results showed decrease in density of the gold layers due to their nanometer thickness and that roughness of the underlayer affects roughness of the gold layer. In addition, thicknesses of the gold layers measured with spectroscopic ellipsometry turned out to be in agreement, within the experimental uncertainty, with results of the X-ray reflectometry method.
Źródło:
Acta Physica Polonica A; 2016, 129, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Activation of Silver Colloids for Enhancement of Raman Scattering
Autorzy:
Kruszewski, S.
Cyrankiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504412.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.20.Fb
33.20.Kf
62.23.St
82.70.Dd
Opis:
Obtaining of systems that provide ever-increasing enhancement of the Raman scattered light is a big challenge. The silver colloids obtained by reduction of silver nitrate by trisodium citrate are the most promising enhancement systems. Nanoparticles of silver forming fresh colloid obtained by this way exhibit in extinction spectrum the absorption band proving of the surface plasmons excitation, but do not enhance the Raman scattered light, are not surface enhanced Raman scattering active. Adding of KCl or $HNO_3$ causes the surface enhanced Raman scattering activation, i.e. causes that the conditions for aggregation of nanoparticles and for adsorption on their surface of molecules providing Raman scattering are created. Increasing amount of added KCl or $HNO_3$ leads to significant changes in the extinction spectrum and to significant increase in intensity of surface enhanced Raman scattering. The observed changes in extinction spectrum are mainly due to progressive aggregations of nanoparticles. In junctions between nanoparticles existing inside aggregates the condition for single molecule surface enhanced Raman scattering are fulfilled and therefore aggregation leads to increase in average surface enhanced Raman scattering intensity. Silver colloid activated by using KCl provides about 10-fold higher surface enhanced Raman scattering than that treated with $HNO_3$.
Źródło:
Acta Physica Polonica A; 2011, 119, 6A; 1018-1022
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Temperature Processing of Nanostructures Based on II-VI Semiconductors Quantum Wells
Autorzy:
Majewicz, M.
Śnieżek, D.
Wojciechowski, T.
Baran, E.
Nowicki, P.
Wojtowicz, T.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1376129.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.63.Hs
68.37.Hk
62.23.St
Opis:
We report the first results of electron beam lithography processes performed on polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ) resists, which have been pre-backed in vacuum at T ≤ 90°C. For such low temperature processing the lithographical resolution is reduced as compared to standard procedures, however, the exposure contrast and adhesion to CdTe and HgTe substrates have been sufficient for the fabrication of sub-μ m quantum devices. Furthermore, the new method of electrical microcontact forming is proposed, based on the local melting and annealing of an indium metal layer, performed with the application of accelerated electron beam. The method has been tested for CdTe/CdMgTe quantum wells using the lithography techniques, the exposure parameters have been optimized by inspecting the morphology of annealed metal film via the in situ imaging.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1174-1176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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