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    Wyświetlanie 1-13 z 13
    Tytuł:
    Electronic Energy Loss of the Partially Stripped Boron-Like and Carbon-Like Fast Ions
    Autorzy:
    Gümüş, H.
    Özalp, C.
    Köroğlu, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035735.pdf
    Data publikacji:
    2003-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.50.Bw
    61.85.+p
    Opis:
    An analytical formula of the electronic stopping power expression in this study was derived for swift boron-like and carbon-like ions by using first-order perturbation theory and frozen-charge-state model. The Hartree- Fock-Slater determinant was used for the description of the bound electrons attached to ions in the ground state and orbital-screening parameter was determined by variational method. The calculated ground state energies in this study were compared with the results of Clementi-Roetti and they are in good agreement with 5%. It has been observed that the difference of energy loss for boron-like and carbon-like projectiles in a frozen-charge state increases as an atomic number increases. Furthermore, the analytical expression of the effective charge of boron-like and carbon-like projectiles was derived.zapisz i p
    Źródło:
    Acta Physica Polonica A; 2003, 103, 4; 349-363
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Change of α-Particle Stopping Power in Ni at the Curie Temperature
    Autorzy:
    Pawłowski, Bogdan
    Moneta, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/2035743.pdf
    Data publikacji:
    2003-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.50.Bw
    61.85.+p
    Opis:
    Experiments showing that the ion-solid state interaction characteristics change at T$\text{}_{C}$, the Curie temperature, were recapitulated. It was shown that the experimental results for the increase in theα-particles stopping power in Fe and Gd foils can be approximately described by the Bethe theory of stopping power with Stoner model for band ferromagnetism. The experimental result for increase in 5.486 MeVα-particles stopping power in 0.89 mg/cm$\text{}^{2}$ Ni foil after transition from ferro- to paramagnetic phase at T$\text{}_{C}$ was presented and it was shown to be in a good correlation with the previous data and with the theoretical evaluation.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 5; 433-440
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application
    Autorzy:
    Miyamura, Y.
    Sekiguchi, T.
    Chen, J.
    Li, J.
    Watanabe, K.
    Kumagai, K.
    Ogura, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198415.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.-a
    61.85.+p
    61.72.Ff
    Opis:
    We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Response of ZnO/GaN Heterostructure to Ion Irradiation
    Autorzy:
    Barcz, A.
    Pągowska, K.
    Kozubal, M.
    Guziewicz, E.
    Borysiewicz, M.
    Dyczewski, J.
    Jakieła, R.
    Ratajczak, J.
    Snigurenko, D.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402192.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.35.Dv
    Opis:
    In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 832-835
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channelling of H$\text{}^{0}$ and H$\text{}^{+}$ in Si Single Crystal
    Autorzy:
    Moneta, M.
    Gront, K.
    Gwizdałła, T.
    Czerbniak, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035636.pdf
    Data publikacji:
    2002-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.85.+p
    68.49.Sf
    61.80.Lj
    Opis:
    The differences in the Rutherford backscattering angular spectra measured for 100 keV hydrogen atoms H$\text{}^{0}$ and protons H$\text{}^{+}$ backscattered from Si crystal are reported and analysed. It was shown that the H$\text{}^{0}$ atom beam is better channelled in the pure crystal and is much more sensitive to the crystal surface coverage, particularly Au layer than the H$\text{}^{+}$ ion beam. The deep crystal regions seem to strengthen this differences.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 6; 759-766
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
    Autorzy:
    Pągowska, K.
    Ratajczak, R.
    Stonert, A.
    Turos, A.
    Nowicki, L.
    Sathish, N.
    Jóźwik, P.
    Muecklich, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504096.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.55.Ln
    68.35.Dv
    Opis:
    A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 153-155
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stopping Power and Energy Straggling of Channeled He-Ions in GaN
    Autorzy:
    Turos, A.
    Ratajczak, R.
    Pągowska, K.
    Nowicki, L.
    Stonert, A.
    Caban, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504098.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.55.Ln
    68.35.Dv
    Opis:
    GaN epitaxial layers are usually grown on sapphire substrates. To avoid disastrous effect of the large lattice mismatch a thin polycrystalline nucleation layer is grown at 500°C followed by the deposition of thick GaN template at much higher temperature. Remnants of the nucleation layer were visualized by transmission electron microscopy as defect agglomeration at the GaN/sapphire interface and provide a very useful depth marker for the measurement of channeled ions stopping power. Random and aligned spectra of He ions incident at energies ranging from 1.7 to 3.7 MeV have been measured and evaluated using the Monte Carlo simulation code McChasy. Impact parameter dependent stopping power has been calculated for channeling direction and its parameters have been adjusted according to experimental data. For virgin, i.e. as grown, samples, the ratio of channeled to random stopping power is constant and amounts to 0.7 in the energy range studied. Defects produced by ion implantation largely influence the stopping power. For channeled ions the variety of possible trajectories leads to different energy loss at a given depth, thus resulting in much larger energy straggling than that for the random path. Beam energy distributions at different depths have been calculated using the McChasy code. They are significantly broader than those predicted by the Bohr formula for random direction.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 163-166
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of Crystal Lattice Deformation by Ion Channeling
    Autorzy:
    Jóźwik, P.
    Sathish, N.
    Nowicki, L.
    Jagielski, J.
    Turos, A.
    Kovarik, L.
    Arey, B.
    Shutthanandan, S.
    Jiang, W.
    Dyczewski, J.
    Barcz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400434.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.85.+p
    68.55.Ln
    02.70.Uu
    68.37.Og
    Opis:
    A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 828-830
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Damage Accumulation in Nuclear Ceramics
    Autorzy:
    Thomé, L.
    Moll, S.
    Jagielski, J.
    Debelle, A.
    Garrido, F.
    Sattonnay, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503742.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.80.Jh
    61.82.Ms
    61.43.-j
    61.85.+p
    68.37.Lp
    Opis:
    Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 7-12
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
    Autorzy:
    Ratajczak, R.
    Stonert, A.
    Guziewicz, E.
    Gierałtowska, S.
    Krajewski, T.
    Luka, G.
    Wachnicki, L.
    Witkowski, B.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400467.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    81.05.Dz
    81.15.Hi
    68.55.ag
    82.80.Yc
    61.85.+p
    Opis:
    The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 899-903
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Standing Waves: a Powerful Tool for Interface Studies
    Autorzy:
    Lagomarsino, S.
    Scarinci, F.
    Castrucci, P.
    Giannini, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931655.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.85.+n
    61.10.Lx
    68.35.-p
    Opis:
    The X-ray standing wave technique has demonstrated in these last years to be a powerful method in the study of interfaces. In this paper the fundamentals of the technique will be given, together with examples of applications in the field of metal-semiconductor, of buried semiconductor-semiconductor interfaces and in structural studies of Langmuir-Blodgett films.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 553-566
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy-Dispersive X-Ray Reflectometry and X-Ray Grazing Incidence Diffraction from Organic Multilayers
    Autorzy:
    Neißendorfer, F.
    Bolm, A.
    Pietsch, U.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963393.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.18.+p
    61.10.Kw
    68.55.Jk
    07.85.Qe
    Opis:
    The installation of the wavelength shifter at the BESSY I storage ring in Berlin makes it possible to apply the synchrotron radiation for white beam investigations of organic multilayers. Considering the energy characteristic of the synchroton radiation source and the absorbance of the beryllium window the synchrotron radiation can be used outside the UHV system for X-ray reflectometry and X-ray diffuse scattering between about 3 keV and 25 keV. Between 3 and 10 keV the synchrotron radiation intensity is high enough to realize the grazing incidence diffraction mode in order to get in-plane information. The capability of the methods is demonstrated at the example of a Pb-stearate multilayer covered by a thin polyelectrolytic polymer layer.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 829-833
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time Resolved IR and X-Ray Simultaneous Spectroscopy: New Opportunities for the Analysis of Fast Chemical-Physical Phenomena in Materials Science
    Autorzy:
    Marcelli, A.
    Hampai, D.
    Xu, Wei
    Malfatti, L.
    Innocenzi, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808498.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.85.Qe
    61.05.cj
    82.20.-w
    78.47.-p
    Opis:
    New powerful sources and advanced analytical techniques have been considered in the last decade to face up the continuously increasing scientific demands, in particular, in materials science. As an example, nano- science and nanotechnology researches are characterized by ultimate spatial resolution, fast and ultrafast time-resolved analysis, but the complexity of the investigated phenomena requires new analytical capabilities and new experimental techniques were introduced in the research arena. The availability all over the world of brilliant synchrotron radiation sources offers incredible opportunities. Many challenging experiments were made possible by these sources and understanding of many complex dynamical problems was obtained. Nevertheless, a strong demand of new analytical approaches, mainly based on concurrent and possibly simultaneous time-resolved experimental techniques, is emerging. Pioneering time resolved experiments combining X-ray and infrared radiation with a conventional source were performed more than a decade ago. Nowadays, many beamlines at third generation synchrotron radiation facilities are equipped with conventional sources to allow complementary techniques and the strategy of a concurrent analysis is mandatory in the investigation of many phenomena in frontier multidisciplinary researches. Moreover, new opportunities will be available by means of concurrent spectroscopic experiments investigating complex phenomena on a short timescale, from the sub-second to the microsecond time domain. We will present and discuss researches where the combination of IR and X-ray simultaneous experiments may return unique information on complex dynamical processes and phase transitions occurring in materials science. Finally, we will briefly describe the conceptual layout of a synchrotron radiation beamline to perform concurrent IR and X-ray experiments.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 489-500
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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