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    Wyświetlanie 1-9 z 9
    Tytuł:
    Investigation of Colour Centres in SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Single Crystals
    Autorzy:
    Ubizskii, S. B.
    Savytskii, D.I.
    Olijnyk, V. Ya.
    Matkovskii, A. O.
    Gloubokov, A.
    Pajączkowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964350.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Ms
    Opis:
    Absorption spectra of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals are investigated as well as their changes after irradiation by γ-quanta ($\text{}^{60}$Co source). Both crystals reveal a similar behaviour that is caused, as it seems, by the same nature of colour centres in them. The conclusion that oxygen defects as well as Fe impurities play a significant role in the colour centres formation in these crystals.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 163-168
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of the Analytical Relationship between Refractive Index and Density of $SiO_{2}$ Layers
    Autorzy:
    Rzodkiewicz, W.
    Panas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807506.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.Tv
    61.82.Ms
    Opis:
    The main goal of the work was the elaboration of the analytical functional relationship between refractive index n and density ρ of $SiO_{2}$ layers on silicon substrates. Such ρ (n) relationship will give possibility to determine elastic and non-elastic strains in $SiO_{2}$ layers on silicon substrates. Ellipsometric measurements by using variable angle spectroscopic ellipsometer of J.A. Woollam Company allowed determination of thicknesses and refractive indexes of silica layers. Measured $SiO_{2}$ masses and calculated volumes of the layers gave possibility to define the degree of densification of silicon dioxide layers on silicon substrates. The Hill approximation function curve turned out to be the best fitting. The obtained Hill curve shows saturation for the density of silicon dioxide equal to ca. 4.53 g/$cm^{3}$. This value corresponds to the value nearby the one of the crystalline polytypic silicon dioxide (stishovite). It seems to be physically established that degree of densification tends to the limiting value.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-92-S-94
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modified Positron Annihilation Model for Glassy-Like As$\text{}_{2}$Se$\text{}_{3}$
    Autorzy:
    Kozdras, A.
    Shpotyuk, O.
    Kovalskiy, A.
    Filipecki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043337.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Ed
    61.82.Ms
    78.70.Bj
    Opis:
    An approach to structural characterization of chalcogenide glasses based on the study of void distribution is discussed. The results of positron annihilation lifetime spectra measurements for glassy-like g-As$\text{}_{2}$Se$\text{}_{3}$ are compared with nano-void distribution data obtained from Monte Carlo simulation. In this consideration perspectives to involve the parameters of nano-voids calculated from the first sharp diffraction peak in the framework of known Elliott's model are analyzed.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 832-836
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Phase Transformations in Pyrochlores Irradiated with Swift Heavy Ions: Influence of Composition and Chemical Bonding
    Autorzy:
    Sattonnay, G.
    Thomé, L.
    Sellami, N.
    Monnet, I.
    Grygiel, C.
    Legros, C.
    Tetot, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400452.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.82.Ms
    61.05.cp
    05.10.-a
    Opis:
    $Gd_2Ti_2O_7$ and $Gd_2Zr_2O_7$ pyrochlores were irradiated with swift heavy ions in order to investigate the effects of the chemical composition on the structural changes induced by high electronic excitation. The XRD results show that the structural modifications induced by irradiation with 93 MeV Xe ions are strongly dependent on the sample composition: $Gd_2Ti_2O_7$ is readily amorphized, whereas $Gd_2Zr_2O_7$ is transformed into a radiation-resistant anion-deficient fluorite structure. Atomistic simulations with the second-moment tight-binding QEq model allow us to calculate the lattice properties of both $Gd_2Ti_2O_7$ and $Gd_2Zr_2O_7$, and also to quantify the degree of covalency and ionicity in these compounds. These calculations clearly show that $Gd_2Ti_2O_7$ is more covalent than $Gd_2Zr_2O_7$, thus confirming that the amorphization resistance can be related to the covalent character of insulators.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 862-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Grain Size on Mechanical Properties of Irradiated Mono- and Polycrystalline $MgAl_2O_4$
    Autorzy:
    Jagielski, J.
    Piatkowska, A.
    Aubert, P.
    Labdi, S.
    Maciejak, O.
    Romaniec, M.
    Thomé, L.
    Jozwik, I.
    Debelle, A.
    Wajler, A.
    Boniecki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503999.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.82.Ms
    62.20.Qp
    68.37.Ps
    Opis:
    The influence of the size of crystalline regions on mechanical properties of irradiated oxides has been studied using a magnesium aluminate spinel $MgAl_2O_4$. The samples characterized by different dimensions of crystalline domains, varying from sintered ceramics with grains of few micrometers in size up to single crystals, were used in the experiments. The samples were irradiated at room temperature with 320 keV $Ar^{2+}$ ions up to fluences reaching 5 × $10^{16} cm^{-2}$. Nanomechanical properties (nanohardness and Young's modulus) were measured by using a nanoindentation technique and the resistance to crack formation by measurement of the total crack lengths made by the Vickers indenter. The results revealed several effects: correlation of nanohardness evolution with the level of accumulated damage, radiation-induced hardness increase in grain-boundary region and significant improvement of material resistance to crack formation. This last effect is especially surprising as the typical depth of cracks formed by Vickers indenter in unirradiated material exceeds several tens of micrometers, i.e. is more than hundred times larger than the thickness of the modified layer.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 118-121
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profiling of Defects in He Implanted $SiO_2$
    Autorzy:
    Mariazzi, S.
    Toniutti, L.
    Brusa, R.
    Duarte Naia, M.
    Karbowski, A.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812538.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.55.-a
    61.82.Ms
    61.72.J-
    Opis:
    Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1447-1453
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Damage Accumulation in Nuclear Ceramics
    Autorzy:
    Thomé, L.
    Moll, S.
    Jagielski, J.
    Debelle, A.
    Garrido, F.
    Sattonnay, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503742.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.80.Jh
    61.82.Ms
    61.43.-j
    61.85.+p
    68.37.Lp
    Opis:
    Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 7-12
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sputtering of Benzene Sample by Large Ne, Ar and Kr Clusters - Molecular Dynamics Computer Simulations
    Autorzy:
    Rzeznik, L.
    Paruch, R.
    Garrison, B.
    Postawa, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400433.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    82.80.Ms
    83.10.Rs
    61.82.Pv
    79.20.Rf
    Opis:
    Molecular dynamics simulations are employed to probe the role of an impact angle on emission efficiency of organic molecules sputtered from benzene crystal bombarded by 15 keV $Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$ clusters. It is found that both the cluster type and the angle of incidence have significant effect on the emission efficiency. The shape of the impact angle dependence does not resemble the dependence characteristic for medium size clusters ($C_{60}$, $Ar_{366}$), where sputtering yield only moderately increases with the impact angle, has a shallow maximum around 40° and then decreases. On the contrary, for the large projectiles ($Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$) the emission efficiency steeply increases with the impact angle, has a pronounced maximum around 55° followed by rapid signal decay. It has been found that the sputtering yield is the most sensitive to the impact angle change for Kr cluster projectiles, while change of the impact angle of Ne projectile has the smallest effect on the efficiency of material ejection.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 825-827
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structures in Multicomponent Polymer Films: Their Formation, Observation and Applications in Electronics and Biotechnology
    Autorzy:
    Budkowski, A.
    Bernasik, A.
    Moons, E.
    Lekka, M.
    Zemła, J.
    Jaczewska, J.
    Haberko, J.
    Raczkowska, J.
    Rysz, J.
    Awsiuk, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808304.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.16.Dn
    61.25.H-
    68.37.-d
    82.80.Ms
    85.60.-q
    85.65.+h
    82.37.Rs
    Opis:
    Several strategies to form multicomponent films of functional polymers, with micron, submicron and nanometer structures, intended for plastic electronics and biotechnology are presented. These approaches are based on film deposition from polymer solution onto a rotating substrate (spin-casting), a method implemented already on manufacturing lines. Film structures are determined with compositional (nanometer) depth profiling and (submicron) imaging modes of dynamic secondary ion mass spectrometry, near-field scanning optical microscopy (with submicron resolution) and scanning probe microscopy (revealing nanometer features). Self-organization of spin-cast polymer mixtures is discussed in detail, since it offers a one-step process to deposit and align simultaneously domains, rich in different polymers, forming various device elements: (i) Surface segregation drives self-stratification of nanometer lamellae for solar cells and anisotropic conductors. (ii) Cohesion energy density controls morphological transition from lamellar (optimal for encapsulated transistors) to lateral structures (suggested for light emitting diodes with variable color). (iii) Selective adhesion to substrate microtemplates, patterned chemically, orders lateral structures for plastic circuitries. (iv) Submicron imprints of water droplets (breath figures) decorate selectively micron-sized domains, and can be used in devices with hierarchic structure. In addition, selective protein adsorption to regular polymer micropatterns, formed with soft lithography after spin-casting, suggests applications in protein chip technology. An approach to reduce lateral blend film structures to submicron scale is also presented, based on (annealed) films of multicomponent nanoparticles.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 435-440
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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