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Wyświetlanie 1-15 z 28
Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Environment of Air-Ions in Healing Chambers in the "Wieliczka" Salt Mine
Autorzy:
Wiszniewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400509.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.90.+B
82.30.Fi
61.80.Jh
Opis:
The present paper is an attempt to determine the parameters of air-ions in salt mines. The investigations were aimed at determination of the degree of ionization of air in places where cosmic ray particles do not arrive at. Specifically, measurements were performed in healing chambers in salt mines where establishment of standards in the healing process should be considered as the necessity. Preliminary investigations were carried out in three salt mines using the Gerdien ion counter, with sensitivity approximately of $20 ions/cm^{3}$. The studies have shown that concentrations of small air-ion are in the range of 1200-4700 ions/$cm^{3}$ and remain persistently in adits and medicinal chambers of this mine. It means that the air in the "Wieliczka" Salt Mine is several times more saturated with air-ions as compared to the neutral atmosphere background. According to the existing standards, this ionization level is not only deemed acceptable but also optimal for humans. Because results of unsystematic measurements of ion concentrations performed in different Polish salt mines are quite similar, it is assumed that the results presented in this paper are of universal character, and that comparable ionization level in the all mines would be expected. Due to this fact, it was decided that only one of them "Wieliczka" Salt Mine (Poland) can be selected for further detailed research.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1661-1665
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Selective Modification of Magnetic Properties of $Co_1$ /Au/$Co_2$/Au Multilayers by He Ion Bombardment
Autorzy:
Urbaniak, M.
Stobiecki, F.
Engel, D.
Szymański, B.
Ehresmann, A.
Powiązania:
https://bibliotekanauki.pl/articles/1810562.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
75.47.De
75.70.Cn
Opis:
We show that in a $[Co_1//Au//Co_2//Au]_4$ multilayer, where $Co_{1(2)}$ denote Co layers of different thicknesses, a 10 keV He-ion bombardment with a 6×$10^{14}$ ions $cm^{-2}$ dose leads to changes of the easy direction from out-of-plane to in-plane in the thicker Co layers ($t_{Co2}$ = 1 nm) while the perpendicular anisotropy of the thinner Co layers ($t_{Co1}$ = 0.6 nm) is preserved. The investigated multilayers were obtained by sputtering and the thickness of the Au layers ($t_{Au}$ = 4 nm) ensured that a direct coupling between the Co layers (through pinholes) and Ruderman-Kittel-Kasuya-Yosida-like interactions were negligible.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 326-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model
Autorzy:
Toulemonde, M.
Dufour, C.
Paumier, E.
Powiązania:
https://bibliotekanauki.pl/articles/2044665.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Az
61.80.Jh
Opis:
A description of the inelastic thermal spike model is presented in order to correlate the energy deposited by swift heavy ions to the nanometric matter transformation induced in inorganic metallic and insulating materials. Knowing that insulator is more sensitive than metallic material and that amorphous material is in general more sensitive than a crystalline one, it appears evident that the electron-phonon coupling constant g plays a key role. It will be shown that in metallic material we are able to describe different phenomena with the same value of g: for example, track formation with defect annealing or sputtering of atoms. In insulators the emphasis is made on results obtained for amorphizable materials like SiO$\text{}_{2}$ quartz and for non-amorphizable ionic crystals like CaF$\text{}_{2}$. Assuming that tracks result from a transient thermal process, a quantitative development of the model is proposed using the electron-atom mean free pathλ (inversely proportional to the square root of g) as a free parameter. With this parameter it is possible to quantitatively describe track radii in a wide range of ion velocities - whatever the bonding character of the crystal is - assuming specific criteria: tracks may result from a rapid quenching of a cylinder of matter in which the energy deposited on the lattice has overcome either the energy necessary to reach a quasi-molten phase in the case of amorphizable materials or the vaporization energy in the case of non-amorphizable materials. The evolution of theλ parameter of the considered insulator decreases versus the band gap energy. In this model, velocity effect, and a link between track formation and sputtering of atoms is established for amorphizable insulators while open questions appear for ionic crystals.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 311-322
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage Accumulation in Nuclear Ceramics
Autorzy:
Thomé, L.
Moll, S.
Jagielski, J.
Debelle, A.
Garrido, F.
Sattonnay, G.
Powiązania:
https://bibliotekanauki.pl/articles/1503742.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
61.82.Ms
61.43.-j
61.85.+p
68.37.Lp
Opis:
Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 7-12
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Dislocation Structure in LiF Crystals Irradiated with Swift Heavy Ions under Oblique Incidence
Autorzy:
Russakova, A.
Akilbekov, A.
Dauletbekova, A.
Baizhumanov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1365710.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.88.+h
61.80.Jh
71.20.Dg
Opis:
The structural modifications of LiF irradiated with swift heavy ions under oblique angles have been investigated using AFM, SEM, chemical etching, nanoindentation and optical absorption spectroscopy. LiF crystals were irradiated under incidence angles of 30 and 70 degrees with 2.2 GeV Au (fluence 5 × $10^{11}$ ions $cm^{-2}$) and 150 MeV Kr ions (fluence $10^{12}-10^{14}$ ions $cm^{-2}$). Structural study on sample cross-sections shows that two damage regions, (1) nanostructured zone and (2) dislocation rich zone, which are typical for irradiations at normal incidence, appear also in samples irradiated under oblique angles. However in the latter case a more complex structure is formed that leads to stronger ion-induced hardening.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1257-1259
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
Autorzy:
Potera, P.
Ubizskii, S.
Sugak, D.
Schwartz, K.
Powiązania:
https://bibliotekanauki.pl/articles/1550538.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jn
81.40.Wx
61.80.Ba
61.80.Jh
61.72.J-
Opis:
The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 181-183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Submicron $n^{+}$-Layers in Silicon Implanted with $H^{+}$-Ions
Autorzy:
Pokotilo, Y.
Petukh, A.
Giro, A.
Węgierek, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504013.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
81.05.Cy
81.40.Wx
Opis:
Formation of submicron $n^{+}$-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of $n^{+}$-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ $E_1$ = 2.3 eV, the pre-exponential factor $τ_{01}$ = 9.1 × $10^{-17}$ s, the ultimate concentration $N_{01}$ = (1 ± 0.1) × $10^{16} cm^{-3}$; Δ $E_2$ = 1.4 eV, $τ_{02}$ = 4.2 × $10^{-9}$ s, $N_{02}$ = (3 ± 0.1) × $10^{16} cm^{-3}$. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
Autorzy:
Pociask, M.
Izhnin, I.
Ilyina, E.
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Varavin, V.
Mynbaev, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811974.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
61.80.Jh
66.30.Lw
Opis:
A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1293-1301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of High Energy Heavy Ions on Magnetic Susceptibility of Soft Magnetic Metallic Glasses
Autorzy:
Pavlovič, M.
Miglierini, M.
Mustafin, E.
Seidl, T.
Šoka, M.
Ensinger, W.
Powiązania:
https://bibliotekanauki.pl/articles/1366539.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.82.Bg
75.30.Cr
75.47.Np
75.50.Kj
Opis:
This contribution presents experimental data concerning the influence of fast heavy ions on magnetic susceptibility of VITROVAC®6025 and VITROPERM®800 metallic glasses. Samples of magnetic ribbons were irradiated with Au, and Ta ions at 11.1 MeV/A (energy per nucleon), and U ions at 5.9 MeV/A. The irradiation fluences varied from 5×$10^{10}$ up to 1.2×$10^{13}$ ions/$cm^{2}$. Relative change of the samples' magnetic susceptibility after and before irradiation was measured and evaluated as a function of the irradiation fluence. Measurements were done with a commercial Kappa-bridge device. We observed that VITROPERM® showed less change of magnetic susceptibility in comparison with VITROVAC® and this change occurred at higher fluences. This indicates higher radiation hardness of VITROPERM® compared with VITROVAC® against high-energy heavy ions. In addition, heavier ions caused larger change of magnetic susceptibility than the lighter ones and the effect could be roughly scaled with the level of electronic stopping.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 54-55
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron and Positronium Trapping in Heat Treated Zeolites (Ceramics), the Effect of Swift Heavy Ion Irradiation
Autorzy:
Major, P.
Kajcsos, Zs.
Liszkay, L.
Zalán, P.
Kosanović, C.
Bosnar, S.
Subotić, B.
Lázár, K.
Skuratov, V.
Havancsák, K.
Gordo, P.
Ferreira Marques, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812537.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.43.Gt
36.10.Dr
61.80.Jh
Opis:
A systematic study of zeolite precursor gels, zeolites, and products of their recrystallization to ceramics was carried out in presence of various alkali ions. The investigation of radiation damage induced by high-energy ion beam irradiation with swift heavy ions (Bi ions at 670 MeV energy with $4×10^{12}$ ion/$cm^2$ fluence) was also included. The shortening of lifetimes found after irradiation in ceramics might probably be ascribed to interactions of o-Ps with free radicals and other quenching agents created through the ion irradiation. These lifetime-shortening interactions probably partly hide the o-Ps trapping in free volume sites.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1441-1446
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Kulik, M.
Kobzev, A.
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1538976.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
61.72.uf
66.10.C-
61.80.Jh
81.20.-n
82.80.Yc
85.40.-e
Opis:
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 332-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
Autorzy:
Krynicki, J.
Warchoł, S.
Rzewuski, H.
Groetzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/1932091.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
Opis:
Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 249-252
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
Autorzy:
Krynicki, J.
Rzewuski, H.
Groetzschel, R.
Claverie, A.
Powiązania:
https://bibliotekanauki.pl/articles/1886822.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.70.Tm
Opis:
Amorphization of GaAs implanted with Cd in the dose range of 2 x 10$\text{}^{13}$-1.2 x 10$\text{}^{14}$ ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 349-353
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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