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Wyświetlanie 1-15 z 38
Tytuł:
Doppler Broadening and Positron Lifetime Measurements of Well-Characterized Sandstone and Limestone Rocks
Autorzy:
Urban, J. M.
Quarles, C. A.
Salaita, G. N.
Powiązania:
https://bibliotekanauki.pl/articles/1933548.pdf
Data publikacji:
1995-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
91.60.-x
78.70.Bj
61.80.Fe
Opis:
We measured the S parameter for samples of well-characterized rocks. Some samples were cleaned while others contained natural hydrocarbons. We also saturated some samples with oil. Preliminary results show a difference in the S parameter for sandstone and limestone samples. There is also a significant difference between samples when clean and when containing natural hydrocarbons or when saturated with light oil. We also measured the lifetime spectrum for the same samples in dry, fresh water-saturated, and brine-saturated condition. The observed lifetime spectra could be described with two or three components. While a detailed understanding of the physical processes responsible for the lifetime spectra is still under study, several interesting results have been obtained. The average lifetime is correlated with the S parameter. The porosity of the samples is correlated with the intensity of the third lifetime component. The average lifetime, as well as the second lifetime component, is systematically longer in the sandstone than limestone samples, and in water or brine-saturated samples. The intensity of the third lifetime component is generally larger in the water or brine-saturated samples.
Źródło:
Acta Physica Polonica A; 1995, 88, 1; 241-248
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Modifications with Cluster Beams: Bulk and Surface Modification
Autorzy:
Dunlop, A.
Powiązania:
https://bibliotekanauki.pl/articles/2011014.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
61.80.-x
Opis:
It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au$\text{}_{4}$ or C$\text{}_{60}$ ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 181-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin-Lattice Relaxation in Polymers and Crystals Related to Disorder and Structure Defects
Autorzy:
Hoffmann, S. K.
Hilczer, W.
Radczyk, T.
Polus, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035737.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.41.+e
61.80.-x
76.30.-v
Opis:
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu$\text{}^{2+}$, as well as for free radical centres produced by ionising irradiation in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ and Li(N$\text{}_{2}$H$\text{}_{5}$)SO$\text{}_{4}$ single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 373-385
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of the Defect Structure on the Nitriding of Fe by PIII
Autorzy:
De Baerdemaeker, J.
Jirásková, Y.
Schaaf, P.
Segers, D.
Dauwe, C.
Powiązania:
https://bibliotekanauki.pl/articles/2043328.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.80.-x
71.60.+z
78.70.Bj
Opis:
Plasma ion immersion implantation is a promising technique for nitriding. A case study of the characterization of the plasma ion immersion implantation nitriding of iron alloys is the plasma ion immersion implantation nitriding of pure Fe. A set of Fe samples of 99.98% purity and with different defect structure was plasma ion immersion implantation nitrided at different temperatures. Depth profiling of the samples was achieved using positron annihilation spectroscopy with a slow positron beam and nanoindentation. A correspondence was found between the line shape parameter S and the hardness of the plasma ion immersion implantation treated samples.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 817-820
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$\text{}^{57}Fe$ Mössbauer Spectroscopy οf Radiation Damaged Allanites
Autorzy:
Malczewski, D.
Grabias, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811896.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.45.+x
61.82.Fd
64.60.My
76.80.+y
Opis:
Metamict minerals contain radioactive elements that degrade the crystal structure of the minerals. The degradation occurs primarily through progressive overlapping recoil nuclei collision cascades from α-decays of $\text{}^{238}U$, $\text{}^{232}Th$, $\text{}^{235}U$ and their daughter products. We report the results of $\text{}^{57}Fe$ Mössbauer spectroscopy, gamma-ray spectrometry and microprobe analysis of three partially metamict allanites, $(Ca,Ce,REE)_2(Fe^{2+},Fe^{3+})$$(Al,Fe^{3+})_2O[Si_2O_7][SiO_4](OH)$ where REE stands for rare earth elements. The samples were collected in pegmatites from Reno, Nevada (USA), Franklin, New Jersey (USA) and Nya Bastnas Field (Sweden). The absorbed α-dose for these minerals was found to range from $5.8×10^{14}$ α-decay/mg for the allanite from Reno to $1.9×10^{15}$ α-decay/mg for the allanite from Franklin. The Mössbauer spectra show a decrease in the $Fe^{2+}$ doublet intensity with increasing absorbed α-dose. We also observe an increase in the line widths of the $Fe^{2+}$ and $Fe^{3+}$ doublets with increasing absorbed α-dose.
Źródło:
Acta Physica Polonica A; 2008, 114, 6; 1683-1690
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Neutron Doped Multicrystalline Silicon for Solar Cells
Autorzy:
Pochrybniak, C.
Pytel, K.
Milczarek, J.
Jaroszewicz, J.
Lipiński, M.
Piotrowski, T.
Kansy, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813183.pdf
Data publikacji:
2008-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Wx
71.60.-i
78.70.Bj
61.80.-x
Opis:
The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
Źródło:
Acta Physica Polonica A; 2008, 113, 4; 1255-1265
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Irradiation Dependence of Electrical Conductivity of $Fe^{3+}$ and $Ni^{2+}$ Doped Polyvinyl Alcohol Films
Autorzy:
Vijaya Kumar, G.
Chandramani, R.
Powiązania:
https://bibliotekanauki.pl/articles/1537708.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
72.80.Le
61.80.x
Opis:
PVA and doped PVA films were prepared by solution casting. The Change in electrical conductivity of pure PVA and transition elements $FeCl_3$ and $NiCl_2 \cdot 6H_2O$ doped PVA films with and without γ-irradiation in the temperature range 50-130°C has been investigated using four point probe technique. The dc electrical conductivity increases with increase in dopant concentration, with temperature and γ-irradiation. The results revealed that γ-irradiation enhances the electrical conductivity. The variation of electrical conductivity σ with temperature, before and after irradiation is due to the intermolecular hydrogen bonding between $Fe^{3+}$ with OH group of PVA and $Ni^{2+}$ with OH group of PVA. We found that $Fe^{3+}$ doped PVA films show higher conductivity than $Ni^{2+}$ doped PVA films.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 917-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Irradiation Studies of Soft Magnetic Metallic Glasses
Autorzy:
Pavlovič, M.
Miglierini, M.
Mustafin, E.
Seidl, T.
Ensinger, W.
Strašík, I.
Šoka, M.
Powiązania:
https://bibliotekanauki.pl/articles/1507011.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.80.+y
75.30.Cr
75.50.-y
61.80.-x
Opis:
Finemet and Vitrovac® 6025 metallic glasses were irradiated by light (N) and heavy (Au and Ta) ions at different energies from 110 keV to 250 MeV/u (MeV per mass unit) and fluences from 1 × $10^{11}$ ions/$cm^2$ to 1 × $10^{17}$ ions/$cm^2$. They were analysed by the Mössbauer spectrometry and magnetic susceptibility measurements. Qualitative differences were observed between the radiation effects caused by light and heavy ions.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 754-755
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiation Defects in $CaF_2-CaO$ Crystals
Autorzy:
Kachan, S.
Obukhova, E.
Shtanko, V.
Chinkov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1550546.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.47.-p
78.70.-g
Opis:
The spectral and kinetic parameters of electron-pulse-initiated transient absorption of oxygen-doped $CaF_{2}$ crystals were studied using pulsed spectrometry with a nanosecond time resolution. It is shown that the formation of a $M_{A}^{+}$ color centers in $CaF_{2}$-0.01M%CaO crystals occurs by thermally activated diffusion of the vacancies. Activation energy of $M_{A}^{+}$ color centers formation process of 0.4 eV is established.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 195-198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage Accumulation in Nuclear Ceramics
Autorzy:
Thomé, L.
Moll, S.
Jagielski, J.
Debelle, A.
Garrido, F.
Sattonnay, G.
Powiązania:
https://bibliotekanauki.pl/articles/1503742.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
61.82.Ms
61.43.-j
61.85.+p
68.37.Lp
Opis:
Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 7-12
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 38

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