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Tytuł:
Precipitation of Nickel Dihalide in Thermally Pretreated NaCl:Ni$\text{}^{2+}$ Crystals
Autorzy:
Morawska-Kowal, T.
Nowak-Woźny, D.
Suszyńska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931612.pdf
Data publikacji:
1994-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.50.-w
61.72.-y
78.20.-e
Opis:
Optical absorption and the yield stress value of NaCl : Ni$\text{}^{2+}$ crystals were measured as functions of the annealing temperature. Morphology and possible structure types of the NiCl$\text{}_{2}$ particles formed under different annealing conditions have been shortly discussed.
Źródło:
Acta Physica Polonica A; 1994, 86, 3; 363-368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity and Positron Lifetime Studies of Precipitation Effects in Al-Cu Alloy
Autorzy:
Αda, P.
Cieslar, M.
Vostrý, P.
Bečvář, F.
Νovotný, I.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1933483.pdf
Data publikacji:
1995-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.70.-g
81.40.-z
Opis:
Decomposition of the supersaturated solid solution of 2 at.% Cu in Al was investigated by means of electrical resistivity and high-resolution positron lifetime measurements. The phase composition of this alloy was determined by transmission electron microscopy. Electrical resistivity measurements were performed by a classical four-point method. Positron lifetime spectra were measured by means of a spectrometer consisting of two BaF$\text{}_{2}$ detectors and a standard fast-slow coincidence system. The specimens were first exposed to the solution heat treatment at 783 K for 19 hours with a subsequent quenching. Then the specimens were isochronally annealed in the temperature range 293 ÷ 573 K. Annealing responses of electrical resistivity and positron annihilation were studied. Resistivity measurements as well as transmission electron microscopy observations confirmed the well-known decomposition sequence of the Al-Cu alloy. The decomposition of the alloy was manifested by the decrease in the intensity of positron lifetime component τ$\text{}_{2}$ = (207 ±2 ) ps correlated with simultaneous appearance and increase in the intensity of τ$\text{}_{3}$ = (180 ± 5) ps component. Component τ$\text{}_{2}$ originates from positron annihilation in vacancies trapped at the Guinier-Preston zones while τ$\text{}_{3}$ comes from annihilation of the positrons localized in the misfit dislocations at coherent precipitates of the Al$\text{}_{2}$Cu phase. The shortest observed component τ$\text{}_{1}$ apparently belongs to annihilation of untrapped positrons.
Źródło:
Acta Physica Polonica A; 1995, 88, 1; 111-117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Constant of Doped Semiconductor
Autorzy:
Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Bąk-Misiuk, J.
Domagała, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933910.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
65.70.+y
Opis:
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 837-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annihilation Study of the Ageing Effects in the Cu-Zn-Sn Parent Phase
Autorzy:
Frąckowiak, J. E.
Płotkowski, K.
Salamon, A.
Powiązania:
https://bibliotekanauki.pl/articles/1933578.pdf
Data publikacji:
1995-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.80.+y
61.72.-y
61.66.Dk
78.70.Bj
Opis:
A study of ageing effects on the structure of Cu-Zn-Sn shape memory alloys was performed using the $\text{}^{119}$Sn Mössbauer spectroscopy and positron annihilation techniques (the positron lifetime, and Doppler broadening line-shape S-parameter measurements). Two stages of ageing at 200°C connected with redistribution of Sn atoms were observed.
Źródło:
Acta Physica Polonica A; 1995, 88, 2; 327-332
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin Resonance Study of Nd$\text{}^{3+}$ and Er$\text{}^{3+}$ Ions in YAlO$\text{}_{3}$
Autorzy:
Jabłoński, R.
Frukacz, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1945633.pdf
Data publikacji:
1996-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.-v
61.72.-y
42.70.Hj
Opis:
In this paper we present the results of ESR and photo-ESR measurements on YAlO$\text{}_{3}$(YAP) single crystals and powder samples doped purposely with about 1 at.% Nd$\text{}^{3+}$ and undoped crystals in which Er$\text{}^{3+}$ was observed as residual dopant. The ESR measurements were carried out at X-band spectrometer in 4-300 K temperature range. The photo-ESR was performed at 5 K using a mercury arc lamp. For the Nd$\text{}^{3+}$ doped crystals the intensity of ESR signal decreased about 2 times during illumination conditions. Moreover, the calculations of the g tensor and A hyperfine structure parameters for Nd$\text{}^{3+}$ and Er$\text{}^{3+}$ were carried out.
Źródło:
Acta Physica Polonica A; 1996, 90, 2; 339-343
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy
Autorzy:
Kaczor, P.
Ashwin, M. J.
Dobosz, D.
Żytkiewicz, Z. R.
Newman, R. C.
Dobaczewski, L.
Powiązania:
https://bibliotekanauki.pl/articles/1951990.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
63.20.Pw
61.72.-y
Opis:
Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si$\text{}_{Ga}$ donors, Si$\text{}_{As}$ acceptors and Si$\text{}_{Ga}$-Si$\text{}_{As}$ pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm$\text{}^{-1}$ are discussed in relation to possible perturbations of the lines from Si$\text{}_{Ga}$ or Si$\text{}_{As}$. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 865-868
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:
Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.10.-i
Opis:
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
Autorzy:
Drozdowski, M.
Kozielski, M.
Pajączkowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1964243.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.30.-j
33.20.Fb
63.20.-e
Opis:
In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 139-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarity Related Problems in Growth of GaN Homoepitaxial Layers
Autorzy:
Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E.
Powiązania:
https://bibliotekanauki.pl/articles/1991873.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
65.70.+y
Opis:
Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 427-430
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Computer Modeling of Point Defects, Impurity Self-Ordering Effects and Surfaces in Advanced Perovskite Ferroelectrics
Autorzy:
Borstel, G.
Kotomin, E. A.
Eglitis, R. I.
Heifets, E.
Powiązania:
https://bibliotekanauki.pl/articles/2014368.pdf
Data publikacji:
2000-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.15.-m
68.35.-p
Opis:
The calculated optical properties of basic point defects - F-type centers and hole polarons - in KNbO$\text{}_{3}$ perovskite crystals are used for the interpretation of available experimental data. The results of quantum chemical calculations for perovskite KNb$\text{}_{x}$Ta$\text{}_{1-x}$O$\text{}_{3}$ solid solutions are presented for x=0, 0.125, 0.25, 0.75, and 1. An analysis of the optimized atomic and electronic structure clearly demonstrates that several nearest Nb atoms substituting for Ta in KTaO$\text{}_{3}$ - unlike Ta impurities in KNbO$\text{}_{3}$ - reveal a self-ordering effect, which probably triggers the ferroelectricity observed in KNb$\text{}_{x}$Ta$\text{}_{1-x}$O$\text{}_{3}$. Lastly, the (110) surface relaxations are calculated for SrTiO$\text{}_{3}$ and BaTiO$\text{}_{3}$ perovskites. The positions of atoms in 16 near-surface layers placed atop a slab of rigid ions are optimized using the classical shell model. Strong surface rumpling and surface-induced dipole moments perpendicular to the surface are predicted for both the O-terminated and Ti-terminated surfaces.
Źródło:
Acta Physica Polonica A; 2000, 98, 5; 469-481
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Search for Thermal Vacancies Forming Close Frenkel Pairs in Fe-Cr Alloys
Autorzy:
Chojcan, J.
Powiązania:
https://bibliotekanauki.pl/articles/2028967.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
76.80.+y
Opis:
The room temperature Mössbauer spectra of $\text{}^{57}$Fe were measured for the bcc Fe$\text{}_{0.948}$Cr$\text{}_{0.052}$ solid solution quenched into water being at about 295 K from different temperatures not exceeding 1000 K, i.e. from the temperatures for which probabilities of formation of "clear" (Schottky) vacancies as well as vacancies forming the separate interstitial-vacancy (Frenkel) pairs are negligibly low. The obtained data were analysed in terms of concentration of unoccupied places in the 14-site surroundings of an $\text{}^{57}$Fe Mössbauer probe in the sample. It turned out that the concentration of vacancies detected by the probe increases with temperature very rapidly - at the rate of about 10$\text{}^{-4}$ K$\text{}^{-1}$. The result may suggest that the Mössbauer probe is sensitive to a possible thermal distortion of the lattice or creation of very close Frenkel pairs (the interstitial is the nearest neighbour of the vacant lattice site).
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 723-729
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dopants in Semiconductors Studied by Perturbed Angular Correlation
Autorzy:
Bartels, J.
Lorenz, K.
Ruske, F.
Tessema, G.
Vianden, R.
Powiązania:
https://bibliotekanauki.pl/articles/2028909.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
61.72.Tt
81.40.Ef
76.80.+y
Opis:
The γ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 585-602
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Klein-Gordon Formulation of X-ray Diffraction in the Laue Cas
Autorzy:
Borowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2030702.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Dp
02.30.Jr
61.72.-y
Opis:
The Takagi-Taupin equations, the fundamental equations for X-ray diffraction deduced from the Maxwell equations, are considered. The connection between the Takagi-Taupin equations and the Klein-Gordon equation is shown. A method of solution of these equations using external differential form formalism is proposed. The solutions for both a narrow and a wide incident beams as a function of boundary conditions is analyzed. The so-called spherical and quasi-plane waves used in the X-ray experimental methods are derived from.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 767-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 80

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