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Wyświetlanie 1-15 z 16
Tytuł:
EL2 in GaAs: Present Status
Autorzy:
Baraff, G. A.
Powiązania:
https://bibliotekanauki.pl/articles/1920968.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.-R
Opis:
Even after a decade of intense investigation, the microscopic nature of EL2 is still controversial. Two models must still be considered seriously, namely that EL2 is the isolated AsGa antisite, and that EL2 also contains an arsenic interstitial on the (111) axis. This paper will comment on experiments used to support each of the two models, and will discuss attempts to reconcile the two.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 599-607
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen Passivation in Semiconductors
Autorzy:
Stavola, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920967.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.-r
61.70.Tm
Opis:
A survey is presented of the structure, stability, and reorientation kinetics of acceptor-H and donor-H complexes in Si and III-V semiconductors. A few examples of the unintentional introduction of H into device materials are also discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 585-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Interference Fringes in Bragg-Case Synchrotron Double-Crystal Images of Stacking Faults in Diamond
Autorzy:
Wierzchowski, W.
Moore, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920862.pdf
Data publikacji:
1992-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.-r
Opis:
Bragg-case synchrotron double-crystal images of stacking faults were studied in a slab prepared from a synthetic diamond of a good quality. The images of stacking faults in topographs taken on the tails of the rocking curve exhibited well pronounced interference fringes. The fringes were strongly dependent on the angular setting and they were less spaced further from the maximum. The experimental images were compared with those theoretically predicted from an application of plane-wave dynamical theory. A reasonably good correspondence between theoretical and experimental images was obtained. The theoretical images of stacking faults were dependent on the type of stacking fault, producing some difference in the first fringe.
Źródło:
Acta Physica Polonica A; 1992, 82, 2; 185-191
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Images of Dislocations in Synchrotron Bragg-Case Section Topography of Diamond
Autorzy:
Wierzchowski, W.
Moore, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920864.pdf
Data publikacji:
1992-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.-r
Opis:
Bragg-case synchrotron section topographs were studied in parallel slabs cut from a synthetic diamond of a good quality. The topographs revealed the Pendellösung fringes and images of dislocations and other defects containing several fringe systems. The experiment provided the opportunity for studying of the theoretical dislocation images obtained by numerical integration of the Takagi-Taupin equations. A program employing a variable step of integration in the Bragg-case has been presented. The influence of the finite slit width and of the limited beam divergence on the theoretical images is also discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 2; 193-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation
Autorzy:
Khrupa, V. I.
Grigoryev, D. O.
Skorokhod, M. Ya.
Datsenko, L. I.
Bąk-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1931661.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
61.70.-r
Opis:
Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α$\text{}_{1}}$ line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 591-596
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Enhanced Emission of Holes from the Double Donor Level of the EL2 Defect in GaAs
Autorzy:
Mąkosa, A.
Wosiński, T.
Szkiełko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1923805.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
61.70.-r
Opis:
Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 813-816
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction between In Impurity Atoms and Impurity Atoms of Mn and Co Dissolved in Silver
Autorzy:
Sternik, M.
Królas, K.
Powiązania:
https://bibliotekanauki.pl/articles/1924278.pdf
Data publikacji:
1992-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.-r
76.80.+y
Opis:
The interaction between impurities of two solute elements in metal hosts leads to a non-random distribution of impurity atoms among the lattice sites. Experimental studies of this distribution provide quantitative information on the energy involved in the formation of an individual impurity-impurity pair. The perturbed angular correlation measurements performed with $\text{}^{111}$In probe atoms and Mössbauer spectra of $\text{}^{57}$Co are used to derive the interaction energy of In atoms with Mn and Co atoms introduced into silver matrix. It is demonstrated that In atoms attract Mn and Co atoms and in the case of In-Mn pair the interaction energy value was determined. The obtained results are discussed in the frame of the semiempirical model and the recent first principles theoretical calculations.
Źródło:
Acta Physica Polonica A; 1992, 82, 6; 975-981
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method
Autorzy:
Fronc, K.
Mąkosa, A.
Wosiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1890874.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.-r
71.55.Eq
Opis:
High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 349-352
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:
Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1890764.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
61.70.-r
81.40.-z
Opis:
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment
Autorzy:
Datsenko, L. I.
Misiuk, A.
Härtwig, J.
Briginets, A.
Khrupa, V. I.
Powiązania:
https://bibliotekanauki.pl/articles/1931660.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
61.70.-r
Opis:
The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Levels and Electrical Activity of Dislocation Electron States in GaAs
Autorzy:
Wosiński, T.
Figielski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1924306.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.-r
71.55.Eq
Opis:
Experimental results are presented confirming that the two energy levels in GaAs: E$\text{}_{c}$ - 0.68 eV and E$\text{}_{v}$ + 0.37 eV, discovered in plastically deformed crystals, belong actually to dislocations. In view of recent identification of the electron state of misfit dislocations at an InGaAs/GaAs interface, a correspondence between these levels and dislocation types has been reinterpreted. The first mentioned leve1 belongs likely to α while the second one to β dislocations of 60° (glide set) type. Such a correspondence is compatible with the observed effect of irradiation on dislocation glide motion in GaAs. It is also argued that these energy levels are involved in the phenomenon of unquenchability of the EL2 defects placed in high-stress regions near dislocations.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 51-58
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Ammonia Carbon-Based Sensors
Autorzy:
Kościński, M.
Seredych, M.
Bandosz, T.
Śliwińska-Bartkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402567.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
A sensor response parameters of the ammonia sensors which are prepared by using composite of graphene oxide and poly(4-styrenesulfonic acid-co-maleic acid) sodium salt derived carbon are presented. Using the self-designed interdigitated electrode on the experimental setup, we were able to determine the capacity for gas sensing as a sensor response for low ammonia concentrations (20, 50, and 100 ppm).
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 182-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Reversal in Cobalt Nanocolumn Structures Obtained by Glancing Angle Deposition
Autorzy:
Buchta, K.
Schmidt, Ch.
Trykowski, G.
Biniak, S.
Kempiński, M.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1428548.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
An advanced deposition technique known as glancing angle deposition was used to fabricate randomly seeded magnetic cobalt columnar nanostructures. The existence of nanocolumns was confirmed by the cross-section scanning electron microscopy. The evolution in the magnetization reversal mechanism as a function of the film thickness was investigated. The coercivity $H_{C}$ and $M_{R}//M_{S}$ ratio (where $M_{R}$ and $M_{S}$ denote the remanent and saturation magnetization, respectively), derived from the magnetic hysteresis loops, are discussed as a function of the angle between the external magnetic field and the surface normal. The direction of the magnetization easy/hard axis and the columns inclination angle were determined on the basis of the angular dependences of the $H_{C}$ and the $M_{R}//M_{S}$. A crossover from the coherent rotation, based on the Stoner-Wohlfarth model, to the curling reversal mode was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1222-1224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric and Magnetic Signatures of Structural and Chemical Ordering of Heusler Alloy Films
Autorzy:
Dubowik, J.
Gościańska, I.
Załęski, K.
Kudryavtsev, Y.
Lee, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1810587.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
73.61.-r
75.70.-i
76.50.+g
Opis:
We present results of in situ temperature measurements of resistivity for some amorphous or partially crystalline Heusler alloy films: $Co_{2}CrAl$, $Co_{2}MnGa$ and off-stoichiometric $Ni_{2}Mn_{1+x}Sn_{x}$, $Ni_{2}Mn_{1-x}Ga_{x}$ that are known to exhibit half-metallic properties and martensitic transformations, respectively. From ρ vs. T characteristics we distinguish various stages of chemical and structural ordering in the films. They appear to be quite distinct in both systems investigated. The resistivity results are compared with magnetic characteristics for $Co_{2}MnGa$ with a high Curie temperature.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 360-362
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Transport Properties and Growth Mechanisms of Ni-Fe/Au/Co/Au Multilayers from In Situ Conduction Measurements
Autorzy:
Błaszyk, M.
Kempiński, M.
Buchta, K.
Chomiuk, P.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1534187.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
75.70.Cn
72.15.-v
Opis:
In the following we present the role of surface scattering at Au/Co and Au/Ni-Fe interfaces in Ni-Fe/Au/Co/Au multilayers deposited in different temperatures. Specularity parameter, which describes the electron scattering, is calculated from fitting in situ collected conductance data with the Fuchs-Namba-Tesanovic model. Application of the parallel resistors model enabled to depict changes between Au/Co and Au/Ni-Fe interfaces within multilayers for each repetition. The correlation between enhanced grain boundary scattering for higher deposition temperatures and surface roughness of Ni-Fe/Au/Co/Au multilayers is found.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 861-863
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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