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Wyszukujesz frazę "61.10.-i" wg kryterium: Temat


Tytuł:
Application of Bond Valence Model to Stability of RE Oxycompounds
Autorzy:
Hölsä, J.
Koski, K.
Lamminmäki, R.-J.
Rahiala, H.
Säilynoja, E.
Powiązania:
https://bibliotekanauki.pl/articles/1963262.pdf
Data publikacji:
1997-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
61.66.-f
61.10.-i
Opis:
The bond valence model was used to study the stability of the non-stoichiometric $LaO_{1-x}F_{1+2x}$ phases, the solid solubility in the ($La_{1-x}Gd_{x}$) OCl system and the phase transformation in the REOCl ($RE^{3+}=La^{3+} -Nd^{3+}, Sm^{3+}-Gd^{3+}, Ho^{3+}, and Y^{3+}$) series. The stability of the non-stoichiometric $LaO_{1-x}F_{1+2x}$ (0 ≤ x ≤ 0.3) phase decreases with increasing excess fluoride. The global instability index values close to 0.2 indicate the instability of the non-stoichiometric phase. The relative stability of the ($La_{1-x}Gd_{x}$)OCl (0 ≤ x ≤ 1.0) solid solutions achieved its minimum in the middle of the series. However, the X-ray powder diffraction results indicated complete solid solubility in the whole ($La_{1-x}Gd_{x}$)OCl series and no phase separation was observed. The bond valence model was used to explain the structural transformation from the tetragonal oxychlorides, REOCl (RE = La-Er, and Y), to hexagonal beyond ErOCl. The calculated global instability index values did not show any clear trend across the REOCl series probably due to the inaccuracies and incoherencies in the original structural data.
Źródło:
Acta Physica Polonica A; 1997, 91, 3; 563-568
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Third Generation Synchrotron Source to Studies of Non-Crystalline Materials: In-Se Amorphous Films
Autorzy:
Burian, A.
Jabłońska, A.
Burian, A. M.
Le Bolloc'h, D.
Metzger, H.
Proux, O.
Hazemann, J. L.
Mosset, A.
Raoux, D.
Powiązania:
https://bibliotekanauki.pl/articles/2030649.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.43.Dq
Opis:
The local structure of vacuum evaporated In-Se amorphous films, containing 50, 60, and 66 at.% Se, was studied using differential anomalous X-ray scattering and extended X-ray absorption fine structure. Both intensity and absorption spectra were measured in the vicinity of the absorption K-edge of Se. The differential anomalous X-ray scattering data were converted to real space by the inverse Fourier transform yielding the differential radial distribution functions. The obtained results provide evidence for the presence of Se-In spatial correlations for In$\text{}_{50}$Se$\text{}_{50}$ and Se-In and Se-Se correlations for In$\text{}_{40}$Se$\text{}_{60}$ and In$\text{}_{34}$Se$\text{}_{66}$ within the first coordination sphere.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 701-708
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Combined Analyses of Ion Beam Synthesized Layers in Porous Silicon
Autorzy:
Ramos, A. R.
Pászti, F.
Horváth, Z. E.
Vázsonyi, É.
Conde, O.
da Silva, M. F.
da Silva, M. R.
Soares, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/2028988.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.18.Bn
61.43.Gt
68.55.Ln
Opis:
High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers severalμm thick were implanted with 170 keV Cr$\text{}^{+}$ ions to fluences of 3×10$\text{}^{17}$ ions/cm$\text{}^{2}$ both at room temperature and 450ºC. Similar samples were implanted with 100 keV Co$\text{}^{+}$ ions to fluences of 2×10$\text{}^{17}$ ions/cm$\text{}^{2}$ at room temperature, 350ºC, and 450ºC. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densifies during implantation, but the underlying porous silicon remains intact. The layer structure, as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 773-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation Length in PBnA Liquid Crystal Family
Autorzy:
El Guermai, K.
Ayadi, M.
El Boussiri, K.
Powiązania:
https://bibliotekanauki.pl/articles/1992845.pdf
Data publikacji:
1998-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.-v
61.10.-i
64.70.Md
61.30.Gd
Opis:
We present a study of the range molecular interactions inside layers in smectic phases A and I of PBnA (phenyl-4 benzylidene 4'-alkylaniline) liquid crystals family. The purpose of this work is to determine the correlation length of the molecules' gravity centers in existing domain of smectic phases and at the transition between them. We used X-rays in-plane peaks of the pattern diffraction of aligned sample by a magnetic field.
Źródło:
Acta Physica Polonica A; 1998, 94, 5-6; 779-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Curved Surfaces in Disordered Carbons by High Energy X-ray Scattering
Autorzy:
Burian, A.
Szczygielska, A.
Kołoczek, J.
Dore, J.
Honkimaki, V.
Duber, S.
Powiązania:
https://bibliotekanauki.pl/articles/2030692.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.10.Eq
61.46.+w
Opis:
Disordered carbons prepared by slow pyrolysis of saccharose and anthracene and subsequent heat treatment at 1000ºC and 2300ºC have been studied by high energy X-ray diffraction. Computer simulations of the powder diffraction patterns of fullerenes, nanotubes and carbon models have been compared with the experimental data after conversion to real space via the Fourier transform. The presence of fullerene- and nanotube-like fragments with non-six membered rings in the investigated samples has been deduced by detailed analysis of the radial distribution functions of the saccharose- and anthracene-based carbons and related to resistance to graphitization of the saccharose-based carbons and to stability of the growing crystallites in the case of the anthracene-based carbons. The obtained results are compared to high resolution electron microscopy and Raman studies.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 751-759
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Data Processing Programs for Analysis of Diffraction Images of Macromolecular Crystals Recorded using Synchrotron Radiation
Autorzy:
Gilski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431531.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
07.85.Qe
61.05.cp
Opis:
Besides the crystal preparation, the first and crucial step in the process of protein structure determination is proper processing of the collected diffraction images, as they provide the experimental observations used throughout the entire process of structure solution and refinement. In the last two decades several computer programs have been developed. Among the most used and popular are: HKL2000, MOSFLM, d*TREK and XDS package. To find out the advantages and disadvantages of the data processing programs, several very different data sets, including diffraction data from DNA/RNA and protein crystals were tested. It has been found that all the major programs for processing and analysis of diffraction data give excellent and comparable results with good quality, medium resolution data sets, but their treatment of very high resolution or imperfect data differs in terms of indexing, spot integration, scaling and the treatment of errors. If the diffraction data are of good quality and the problem is relatively straightforward, the automated approach to data processing may be most appropriate. On the other hand, if one is trying to squeeze out as much information from the experimental data as possible, then only expert manual processing can be successful, regardless of the data quality.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 871-875
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
Autorzy:
Misiuk, A.
Härtwig, J.
Prieur, E.
Ohler, M.
Bąk-Misiuk, J.
Domagała, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/1964154.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Yx
81.40.Vw
61.10.-i
Opis:
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 987-991
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Does Carbon Prefer Flat or Curved Surfaces?
Autorzy:
Burian, A.
Dore, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/2014367.pdf
Data publikacji:
2000-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.+c
61.10.-i
78.30.Na
Opis:
The presence of fullerene- and nanotube-like elements in carbons prepared from saccharose and anthracene by slow pyrolysis and then heat treated at 1000°C, 1900°C, and 2300°C has been revealed using Raman spectroscopy. High energy X-ray diffraction has been used to examine the effect on these carbons of heat treatment. Tendency to graphitization of the anthracene-based carbon and resistance to graphitization of the saccharose carbon will be considered in the light of the formation of curved graphitic networks and cages. The obtained results lead us to propose a model of the structure of non-graphitizing and graphitizing carbons.
Źródło:
Acta Physica Polonica A; 2000, 98, 5; 457-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Uniaxial Stretching on Structural Properties of Poly(3-Alkylthiophenes)
Autorzy:
Łużny, W.
Zagórska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964842.pdf
Data publikacji:
1997-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
36.20.-r
61.10.-i
Opis:
The influence of uniaxial stretching on the molecular structure of poly(3-alkylthiophenes) was studied with the use of X-ray diffraction. Three poly(3-alkylthiophenes), namely these containing n-hexyl, n-octyl and n-decyl groups, were investigated. The samples were oriented by stretching and the diffraction patterns for two geometries of scattering were obtained for undoped samples. The comparison of experimental diffraction data for unoriented and oriented samples, gives information about the role of the side chains in the changes of molecular conformation induced by stretching of the polymer sample. The main conclusion of our work is that the process of orientation induces similar phenomena in all samples studied, but the structural and conformation changes depend on the side chain length: the shorter the alkyl substituent, the easier the straightening of the main polymer chain. The authors suggest that uniaxial stretching of poly(3-alkylthiophenes) changes the degree of main chain planarity. This effect can influence the π-conjugation in polymer system, which may have great importance for any future application of poly(3-alkylthiophenes).
Źródło:
Acta Physica Polonica A; 1997, 92, 3; 491-500
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Microscopy and X-ray Structural Investigations of Incommensurate Spin-Ladder Sr$\text{}_{4.1}$Ca$\text{}_{4.7}$Bi$\text{}_{0.3}$Cu$\text{}_{17}$O$\text{}_{29}$ Single Crystals
Autorzy:
Dłużewski, P.
Pietraszko, A.
Kozłowski, M.
Szczepańska, A.
Górecka, J.
Baran, M.
Leonyuk, L.
Babonas, G.-J.
Lebedev, O.
Szymczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/2014560.pdf
Data publikacji:
2000-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Nn
61.72.Mm
74.72.-h
61.16.Bg
61.10.-i
Opis:
Transmission electron microscopy and X-ray diffraction proved chain ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3° around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Źródło:
Acta Physica Polonica A; 2000, 98, 6; 729-737
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:
Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.10.-i
Opis:
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Autorzy:
Bauer, G.
Koppensteiner, E.
Hamberger, P.
Nützel, J.
Abstreiter, G.
Kibbel, H.
Presting, H.
Kasper, E.
Powiązania:
https://bibliotekanauki.pl/articles/1929613.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.+g
61.10.-i
68.55.Jk
Opis:
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si$\text{}_{1-x}$Ge$\text{}_{x}$ multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si$\text{}_{9}$Ge$\text{}_{6}$ superlattices grown by molecular beam epitaxy on rather thick step-graded Si$\text{}_{1-x}$Ge$\text{}_{x}$ (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si$\text{}_{0.6}$ Ge$\text{}_{0.4}$ layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 475-489
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Resolution X-ray Reciprocal Space Mapping
Autorzy:
Bauer, G.
Li, J. H.
Holy, V.
Powiązania:
https://bibliotekanauki.pl/articles/1943985.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
68.55.-a
61.72.Lk
Opis:
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 115-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Temperature X-ray Diffraction Studies of Lattice Dynamics in Ni$\text{}_{3}$(Fe,Nb) Ordered Alloys
Autorzy:
Mekhrabov, A. O.
Powiązania:
https://bibliotekanauki.pl/articles/1930628.pdf
Data publikacji:
1994-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
A study is performed on characteristics of lattice dynamics in the initially ordered ternary Ni$\text{}_{3}$(Fe$\text{}_{1-x}$Nb$\text{}_{x}$) (x = O to 10 at.%) alloys using high temperature X-ray diffractometry for the temperature range from 300 K to 1300 K. Aspects investigated included temperature and concentration dependencies of the full mean square atomic displacements Ū²$\text{}_{f}$, the Debye characteristic temperature Θ$\text{}_{D}$, and linear thermal expansion coefficient α. It is found that the Ū²$\text{}_{f}$, Θ$\text{}_{D}$, and α parameters show anomalous change at temperatures where the alloys are subjected to order-disorder phase transitions. It is further found that Nb addition results in the considerable increase in the parameters Ū²$\text{}_{f}$ and α and decrease in Θ$\text{}_{D}$. Moreover, the addition of Nb stabilizes Ni$\text{}_{3}$Fe ordered structure and shifts the order-disorder transition to higher temperature.
Źródło:
Acta Physica Polonica A; 1994, 85, 3; 571-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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