- Tytuł:
- Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection
- Autorzy:
-
Ašmontas, S.
Gradauskas, J.
Kozič, A.
Shtrikmann, H.
Sužiedėlis, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2041657.pdf
- Data publikacji:
- 2005-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
84.40.-x
07.57.Kp - Opis:
- Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n$\text{}^{+}$ junctions was observed experimentally in K$\text{}_{a}$ frequency range, which coincides well with theoretical predictions.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 1; 147-150
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł