Autor: Yuvchenko, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions
Autorzy:: Didyk, A.
Komarov, F.
Vlasukova, L.
Yuvchenko, V.
Hofman, A.
Powiązania:: https://bibliotekanauki.pl/articles/147490.pdf
Data publikacji:: 2006
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: InP crystals
GaAs crystals
preliminary disorder
swift ion irradiation
surface topography
macrodefect
Opis:: InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.
Źródło:: Nukleonika; 2006, 51, 2; 105-109
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions
Autorzy:: Didyk, A. Y.
Komarov, F. F.
Vlasukova, L. A.
Gracheva, E. A.
Hofman, A.
Yuvchenko, V. N.
Wiśniewski, R.
Wilczyńska, T.
Powiązania:: https://bibliotekanauki.pl/articles/146738.pdf
Data publikacji:: 2008
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: semiconductors
gallium arsenide
swift heavy ions
inelastic energy loss
atomic force microscopy (AFM)
Opis:: We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.
Źródło:: Nukleonika; 2008, 53, 2; 77-82
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

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