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Wyszukujesz frazę "Xiao-dong, Xin" wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Error analysis of the three-phase electrical energy calculation method in the case of voltage-loss failure
Autorzy:
Cheng, Han-miao
Wang, Zhong-dong
Cai, Qi-xin
Lu, Xiao-quan
Gao, Yu-xiang
Song, Rui-peng
Tian, Zheng-qi
Mu, Xiao-xing
Powiązania:
https://bibliotekanauki.pl/articles/221096.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
three-phase electrical energy meter
voltage-loss failure
voltage substitution
three-phase voltage unbalance
calculation error
Opis:
The single-phase voltage loss is a common fault. Once the voltage-loss failure occurs, the amount of electrical energy will not be measured, but it is to be calculated so as to protect the interest of the power supplier. Two automatic calculation methods, the power substitution and the voltage substitution, are introduced in this paper. Considering the lack of quantitative analysis of the calculation error of the voltage substitution method, the grid traversal method and MATLAB tool are applied to solve the problem. The theoretical analysis indicates that the calculation error is closely related to the voltage unbalance factor and the power factor, and the maximum calculation error is about 6% when the power system operates normally. To verify the theoretical analysis, two three-phase electrical energy metering devices have been developed, and verification tests have been carried out in both the lab and field conditions. The lab testing results are consistent with the theoretical ones, and the field testing results show that the calculation errors are generally below 0.2%, that is correct in most cases.
Źródło:
Metrology and Measurement Systems; 2019, 26, 3; 505-516
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of InAs Quantum Dots during Annealing Process
Autorzy:
Guo-zhi, Jia
Jiang-hong, Yao
Yong-chun, Shu
Xiao-dong, Xin
Pi-Biao, -
Powiązania:
https://bibliotekanauki.pl/articles/1812057.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Dn
81.05.Ea
73.21.La
Opis:
InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under $N_2$ atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed by a prompt decrease as annealing temperature increases. It was found that the photoluminescence signal on quantum dots capped with GaAs layer was first slightly red-shifted and then blue-shifted with an increase in annealing temperature. The blue-shift can be attributed to In/Ga interdiffusion in annealing process. Red-shift of optical features indicates the change of the quantum dots compostion, size, and strain from the barrier.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 919-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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