Autor: Wośko, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Ecological and technical requirements of radioactive waste utilisation
Autorzy:: Borowski, G.
Wośko, M.
Powiązania:: https://bibliotekanauki.pl/articles/123197.pdf
Data publikacji:: 2013
Wydawca:: Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:: radioactive waste
utilisation
storage
solidification
vitrification
Opis:: The paper presents a survey of radioactive waste disposal technologies used worldwide in terms of their influence upon natural environment. Typical sources of radioactive waste from medicine and industry were presented. In addition, various types of radioactive waste, both liquid and solid, were described. Requirements and conditions of the waste’s storage were characterised. Selected liquid and solid waste processing technologies were shown. It was stipulated that contemporary methods of radioactive waste utilisation enable their successful neutralisation. The implementation of these methods ought to be mandated by ecological factors first and only then economical ones.
Źródło:: Journal of Ecological Engineering; 2013, 14, 1; 40-47
2299-8993
Pojawia się w:: Journal of Ecological Engineering
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
Autorzy:: Wosko, M
Paszkiewicz, B
Paszkiewicz, R
Tlaczala, M
Powiązania:: https://bibliotekanauki.pl/articles/174100.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: AlGaN/GaN
heterostructure
AlN spacer
MOVPE
Opis:: AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobility of two-dimensional electron gas (2DEG) is the alloy and interface roughness scattering mechanism occurring at the heterointerface. Mathematical calculations of a wave-function of 2DEG in the channel show that theses two phenomena play an important role, due to the fact that some electrons in 2DEG can migrate into AlGaN barrier and be strongly dissipated. One of the proposed solutions against alloy scattering in the buffer layer is the use of thin AlN spacer at the heterointerface between AlGaN and GaN layers. AlN layer enhances the conduction band offset due to a polarization-induced dipole in the AlN layer, and therefore increases carrier confinement. Several Al0.18GaN0.82/AlN/GaN heterostructures with different AlN spacer layer thickness were grown by MOVPE method for studies of the Hall mobility and sheet carrier concentration of 2DEG. Hall measurements performed using Van der Pauw shown mobility maximum at nominally 1.3 nm AlN spacer thickness and almost linear dependence of sheet carrier concentration with AlN spacer thickness in the range from 0.7 to 2 nm.
Źródło:: Optica Applicata; 2013, 43, 1; 61-66
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
Autorzy:: Gryglewicz, J
Stafiniak, A
Wosko, M
Prazmowska, J
Paszkiewicz, B
Powiązania:: https://bibliotekanauki.pl/articles/174309.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: reactive ione etching
HEMT
AlGaN/GaN heterostructure
Opis:: In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.
Źródło:: Optica Applicata; 2013, 43, 1; 27-33
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers
Autorzy:: Prażmowska, J.
Korbutowicz, R.
Wośko, M.
Paszkiewicz, R.
Kovač, J.
Srnanek, R.
Tłaczała, M.
Powiązania:: https://bibliotekanauki.pl/articles/1807541.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.10.Bk
81.15.Gh
81.15.Kk
Opis:: Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on $Al_{2}O_{3}$. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-123-S-125
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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