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    Wyświetlanie 1-12 z 12
    Tytuł:
    Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
    Autorzy:
    Węgierek, P.
    Billewicz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400487.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 948-951
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
    Autorzy:
    Węgierek, P.
    Billewicz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402217.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 875-878
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with $Ne^{++}$ Neon Ions
    Autorzy:
    Węgierek, P.
    Billewicz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504000.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of $Ne^{++}$ neon ions. An analysis of electrical properties recorded at the annealing temperature of $T_{a}$ = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 122-124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
    Autorzy:
    Węgierek, P.
    Billewicz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1382904.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1392-1395
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
    Autorzy:
    Węgierek, P.
    Billewicz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402240.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 943-945
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Early Jurassic insect fauna in the Holy Cross Mountains
    Autorzy:
    Wegierek, P
    Zherikhin, V V
    Powiązania:
    https://bibliotekanauki.pl/articles/21327.pdf
    Data publikacji:
    1997
    Wydawca:
    Polska Akademia Nauk. Instytut Paleobiologii PAN
    Tematy:
    plant fossil
    Mesozoic
    fauna
    locality
    Polska
    fossil insect
    Early Jurassic
    Holy Cross Mountains
    Kielce town
    insect
    Jurassic
    paleontology
    Źródło:
    Acta Palaeontologica Polonica; 1997, 42, 4
    0567-7920
    Pojawia się w:
    Acta Palaeontologica Polonica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Submicron $n^{+}$-Layers in Silicon Implanted with $H^{+}$-Ions
    Autorzy:
    Pokotilo, Y.
    Petukh, A.
    Giro, A.
    Węgierek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504013.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    81.05.Cy
    81.40.Wx
    Opis:
    Formation of submicron $n^{+}$-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of $n^{+}$-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ $E_1$ = 2.3 eV, the pre-exponential factor $τ_{01}$ = 9.1 × $10^{-17}$ s, the ultimate concentration $N_{01}$ = (1 ± 0.1) × $10^{16} cm^{-3}$; Δ $E_2$ = 1.4 eV, $τ_{02}$ = 4.2 × $10^{-9}$ s, $N_{02}$ = (3 ± 0.1) × $10^{16} cm^{-3}$. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 129-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes
    Autorzy:
    Billewicz, P.
    Węgierek, P.
    Grudniewski, T.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033759.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    71.55.Eq
    88.40.hj
    Opis:
    The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 274-277
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
    Autorzy:
    Żukowski, P.
    Węgierek, P.
    Billewicz, P.
    Kołtunowicz, T.
    Komarov, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504001.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    61.72.Cc
    72.80.Ey
    Opis:
    The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 125-128
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
    Autorzy:
    Zhukowski, P.
    Kołtunowicz, T.
    Węgierek, P.
    Fedotova, J.
    Fedotov, A.
    Larkin, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503848.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.22.-f
    81.40.Ef
    84.37.+q
    72.20.Ee
    Opis:
    This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 43-45
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Filiks, J.
    Prucnal, S.
    Mączka, D.
    Vaganov, Yu.
    Węgierek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033135.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 283-287
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Searching for in vitro biomarkers of susceptibility to prostate and cervical cancers by analysis of chromosomal instability, gamma-H2AX foci, polymorphisms in DNA repair genes and apoptosis
    Autorzy:
    Wegierek-Ciuk, A.
    Arabski, M.
    Kedzierawski, P.
    Florek, A.
    Solowiej, D.
    Gozdz, S.
    Lisowska, H.
    Kowalik, A.
    Kowalska, M.
    Wojcik, A.
    Polanska, J.
    Lankoff, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/3629.pdf
    Data publikacji:
    2015
    Wydawca:
    Instytut Medycyny Wsi
    Tematy:
    in vitro biomarker
    susceptibility
    prostate
    cervical cancer
    cancer
    patient
    human disease
    lymphocyte
    man
    ionizing radiation
    chromosome instability
    gamma-H2AX biomarker
    polymorphism
    DNA repair gene
    apoptosis
    Opis:
    Introduction and objective. According to the cancer epidemiology databases, cancer is the second leading cause of death in developing countries. Moreover, the WHO predicts a continuing increase in the incidence of cancer, extending this trend well into the next several decades. Hence, it seems obvious that the prediction of cancer susceptibility and early diagnosis is an important goal for modern biomedical sciences. The aim of this study is to clarify the value of chromosomal damage, capacity for the repair of double-strand breaks (DSBs), polymorphisms in DNA repair genes, and apoptosis as prognostic markers for prostate and cervical cancer. Materials and methods. 30 prostate cancer patients and 30 cervical cancer patients were enrolled into the study. In addition, 30 healthy female donors and 30 healthy male donors served as controls. The following endpoints were investigated: frequency of micronuclei, gamma-H2AX fluorescence, XRCC1 194C>T, XRCC1 399G>A, XRCC3 IVS5–14 A>G, OGG1 326 Ser>Cys polymorphisms and apoptosis. Results. Among all tested factors, only the homozygous variant (Arg/Arg) in XRCC1 (399 Arg/Gln) was strongly associated with prostate cancer risk, and only a low apoptotic response was connected with cervical cancer risk. The presented study confirmed a positive association between the frequency of MN and increased prostate and cervical cancer risk. However, such a biomarker is not cancer specific. In addition, the information gained by analyzing the gamma-H2AX fluorescence, as well apoptosis, had no value for predicting the risk of prostate and cervical cancers. Conclusions. The final conclusion of the study is that cancer susceptibility is a complex phenotype not readily detectable in relatively small studies by functional assays or analysis of SNP in few, selected genes.
    Źródło:
    Journal of Pre-Clinical and Clinical Research; 2015, 09, 2
    1898-2395
    Pojawia się w:
    Journal of Pre-Clinical and Clinical Research
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

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