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Wyświetlanie 1-15 z 26
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications
Autorzy:
Gieraltowska, S
Wachnicki, Ł
Witkowski, B S
Godlewski, M
Guziewicz, E
Powiązania:
https://bibliotekanauki.pl/articles/173591.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
high-k oxides
composite layers
atomic layer deposition
transparent electronics
zinc oxide
Opis:
Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).
Źródło:
Optica Applicata; 2013, 43, 1; 17-25
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
Autorzy:
Godlewski, M.
Guziewicz, E.
Gierałtowska, S.
Łuka, G.
Krajewski, T.
Wachnicki, Ł.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807598.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.-p
73.40.Lq
73.40.Qv
81.05.Dz
81.15.-z
Opis:
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-19-S-21
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Cartan-Monge geometric approach to the generalized characteristics method and its application to the heat equation Ut - Uxx = 0
Autorzy:
Golenia, J.
Prykarpatsky, Y. A.
Wachnicki, E.
Powiązania:
https://bibliotekanauki.pl/articles/255525.pdf
Data publikacji:
2009
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
characteristics method
heat equation
Opis:
The generalized Cartan-Monge type approach to the characteristics method is discussed from the geometric point of view. Its application to the classical one-dimensional linear heat equation Ut - uxx = 0 is presented. It is shown that the corresponding exact solution of the Cauchy problem can be represented in a classical functional-analytic Gauss type form.
Źródło:
Opuscula Mathematica; 2009, 29, 1; 27-39
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
Autorzy:
Guziewicz, E.
Lukasiewicz, M.
Wachnicki, L.
Kopalko, K.
Dłużewski, P.
Jakiela, R.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492604.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.At
75.50.Pp
81.05.Dz
81.15.Gh
Opis:
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO by ALD - Advantages of the Material Grown at Low Temperature
Autorzy:
Guziewicz, E.
Godlewski, M.
Krajewski, T.
Wachnicki, Ł.
Łuka, G.
Paszkowicz, W.
Domagała, J.
Przeździecka, E.
Łusakowska, E.
Witkowski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791286.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
72.80.Ey
Opis:
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 814-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications
Autorzy:
Gwóźdź, K.
Płaczek-Popko, E.
Gumienny, Z.
Zielony, E.
Pietruszka, R.
Witkowski, B. S.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Chang, L. B.
Powiązania:
https://bibliotekanauki.pl/articles/201432.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
solar cells
ZnO
Si
heterojunction
nanorods
nanoparticles
ogniwa słoneczne
nanopręty
nanocząstki
Opis:
Our studies focus on test structures for photovoltaic applications based on zinc oxide nanorods grown using a low-temperature hydrothermal method on a p-type silicon substrate. The nanorods were covered with silver nanoparticles of two diameters – 20–30 nm and 50–60 nm – using a sputtering method. Scanning electron microscopy (SEM) micrographs showed that the deposited nanoparticles had the same diameters. The densities of the nanorods were obtained by means of atomic force microscope (AFM) images. SEM images and Raman spectroscopy confirmed the hexagonal wurtzite structure of the nanorods. Photoluminescence measurements proved the good quality of the samples. Afterwards an atomic layer deposition (ALD) method was used to grow ZnO:Al (AZO) layer on top of the nanorods as a transparent electrode and ohmic Au contacts were deposited onto the silicon substrate. For the solar cells prepared in that manner the current-voltage (I-V) characteristics before and after the illumination were measured and their basic performance parameters were determined. It was found that the spectral characteristics of a quantum efficiency exhibit an increase for short wavelengths and this behavior has been linked with the plasmonic effect.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 529-533
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:
Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
Autorzy:
Łuka, G.
Krajewski, T.
Szczerbakow, A.
Łusakowska, E.
Kopalko, K.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Fidelus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811956.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
73.40.Lq
81.05.Lg
Opis:
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1229-1234
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
Autorzy:
Łukasiewicz, M.
Wójcik-Głodowska, A.
Guziewicz, E.
Jakieła, R.
Krajewski, T.
Łusakowska, E.
Paszkowicz, W.
Minikayev, R.
Kiecana, M.
Sawicki, M.
Godlewski, M.
Wachnicki, Ł.
Szczepanik, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811957.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1235-1240
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Wachnicki, Ł.
Kopalko, K.
Gierałtowska, S.
Wittlin, A.
Jaworski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492571.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 26

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