Autor: Ustinov, A. V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Astigmatic transformation of Bessel beams in a uniaxial crystal
Autorzy:: Khonina, S. N.
Paranin, V. D.
Ustinov, A. V.
Krasnov, A. P.
Powiązania:: https://bibliotekanauki.pl/articles/173240.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: Bessel beams
axicon
astigmatic transformations
uniaxial crystal
polarization
Opis:: We investigate theoretically and experimentally the astigmatic transformations of Bessel beams at propagation perpendicularly to the c-axis of a uniaxial crystal. The analogy between this transformation and the astigmatic distortion of the plane wave by an inclined axicon is analytically shown. The influence of the polarization direction of radiation relative to the c-axis of a crystal on electric field components of the ordinary and the extraordinary beams is investigated.
Źródło:: Optica Applicata; 2016, 46, 1; 5-18
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
Autorzy:: Vorobjev, L.
Firsov, D.
Shalygin, V.
Panevin, V.
Sofronov, A.
Ustinov, V.
Zhukov, A.
Egorov, A.
Andrianov, A.
Zakhar'in, A.
Ganichev, S.
Danilov, S.
Kozlov, D.
Powiązania:: https://bibliotekanauki.pl/articles/1813218.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Fg
71.55.-i
71.55.Eq
73.21.Fg
73.61.Ey
78.55.Cr
78.66.-w
78.67.De
Opis:: We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 925-928
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules
Autorzy:: Firsov, D.
Vorobjev, L.
Panevin, V.
Fedosov, N.
Shalygin, V.
Samsonenko, J.
Tonkikh, A.
Cirlin, G.
Andreev, A.
Kryzhanovskaya, N.
Tarasov, I.
Pikhtin, N.
Ustinov, V.
Hanna, S.
Seilmeier, A.
Julien, F.
Zakharov, N.
Werner, P.
Powiązania:: https://bibliotekanauki.pl/articles/2041673.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
Opis:: Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 158-162
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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