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    Wyświetlanie 1-9 z 9
    Tytuł:
    AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
    Autorzy:
    Boratyński, B.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1585274.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Hd
    85.30.De
    85.30.Tv
    Opis:
    AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× $10^{12} cm^{-2}$ and mobility of 1600 $cm^{2}$/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 800-805
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
    Autorzy:
    Dawidowski, W.
    Ściana, B.
    Zborowska-Lindert, I.
    Mikolásek, M.
    Latkowska, M.
    Radziewicz, D.
    Pucicki, D.
    Bielak, K.
    Badura, M.
    Kováč, J.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/226630.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    dilute nitrides
    AP MOVPE
    subcell
    tandem solar cell
    J-V characteristics
    Opis:
    Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 2; 151-156
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers
    Autorzy:
    Prażmowska, J.
    Korbutowicz, R.
    Wośko, M.
    Paszkiewicz, R.
    Kovač, J.
    Srnanek, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807541.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Bk
    81.15.Gh
    81.15.Kk
    Opis:
    Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on $Al_{2}O_{3}$. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-123-S-125
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
    Autorzy:
    Wosko, M
    Paszkiewicz, B
    Paszkiewicz, R
    Tlaczala, M
    Powiązania:
    https://bibliotekanauki.pl/articles/174100.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    AlGaN/GaN
    heterostructure
    AlN spacer
    MOVPE
    Opis:
    AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobility of two-dimensional electron gas (2DEG) is the alloy and interface roughness scattering mechanism occurring at the heterointerface. Mathematical calculations of a wave-function of 2DEG in the channel show that theses two phenomena play an important role, due to the fact that some electrons in 2DEG can migrate into AlGaN barrier and be strongly dissipated. One of the proposed solutions against alloy scattering in the buffer layer is the use of thin AlN spacer at the heterointerface between AlGaN and GaN layers. AlN layer enhances the conduction band offset due to a polarization-induced dipole in the AlN layer, and therefore increases carrier confinement. Several Al0.18GaN0.82/AlN/GaN heterostructures with different AlN spacer layer thickness were grown by MOVPE method for studies of the Hall mobility and sheet carrier concentration of 2DEG. Hall measurements performed using Van der Pauw shown mobility maximum at nominally 1.3 nm AlN spacer thickness and almost linear dependence of sheet carrier concentration with AlN spacer thickness in the range from 0.7 to 2 nm.
    Źródło:
    Optica Applicata; 2013, 43, 1; 61-66
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra
    Autorzy:
    Oleszkiewicz, W
    Markowski, J
    Srnanek, R
    Kijaszek, W
    Gryglewicz, J
    Kovac, J
    Tlaczala, M
    Powiązania:
    https://bibliotekanauki.pl/articles/173686.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    PECVD
    diamond-like carbon layers
    OES
    Raman spectroscopy
    AFM
    Opis:
    The work presents the results of a research carried out with PlasmaLab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The change of an initial value of DC bias was investigated as a function of set values of the generator power (RF generator and ICP generator) in the constant power of the RF generator operation mode. The research shows that the value of DC bias nearly linearly depends on the RF generator power value and is affected only in a small degree by the power of ICP discharge. The capability of an installed OES spectrometer has been used to ensure the same starting conditions for the deposition processes of DLC films. The analysis of OES spectra of RF plasma discharge used in the deposition processes shows that the increase in ICP discharge power value results in the increased efficiency of the ionization process of a gaseous precursor (CH4). The quality of deposited DLC layers was examined by Raman spectroscopy. Basing on the acquired Raman spectra, the theoretical content of sp3 bonds in the structure of the film was estimated. The content is ranging from 30% to 65% and depends on ICP PECVD deposition process parameters.
    Źródło:
    Optica Applicata; 2013, 43, 1; 109-115
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
    Autorzy:
    Jezierski, K.
    Sitarek, P.
    Misiewicz, J.
    Panek, M.
    Ściana, B.
    Korbutowicz, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933782.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    71.35.+z
    Opis:
    Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 751-754
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polarity Related Problems in Growth of GaN Homoepitaxial Layers
    Autorzy:
    Leszczyński, M.
    Prystawko, P.
    Śliwinski, A.
    Suski, T.
    Litwin-Staszewska, E.
    Porowski, S.
    Paszkiewicz, R.
    Tłaczała, M.
    Beaumont, B.
    Gibart, P.
    Barski, A.
    Langer, R.
    Knap, W.
    Frayssinet, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991873.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Vv
    65.70.+y
    Opis:
    Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 427-430
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures
    Autorzy:
    Pucicki, D.
    Bielak, K.
    Dawidowski, W.
    Ściana, B.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/174427.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    dilute nitrides
    optical properties
    carrier confinement
    photoluminescence
    Opis:
    In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons.
    Źródło:
    Optica Applicata; 2016, 46, 2; 255-263
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications
    Autorzy:
    Badura, M.
    Bielak, K.
    Ściana, B.
    Radziewicz, D.
    Pucicki, D.
    Dawidowski, W.
    Żelazna, K.
    Kudrawiec, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/173549.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    InGaAs
    AlInAs
    superlattice
    metalorganic vapour phase epitaxy
    MOVPE
    quantum cascade laser
    QCL
    Opis:
    Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed.
    Źródło:
    Optica Applicata; 2016, 46, 2; 241-248
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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