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Wyszukujesz frazę "Suchikova, Y." wg kryterium: Autor

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    Tytuł:
    Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide
    Autorzy:
    Kovachov, S.S.
    Bogdanov, I.T.
    Pimenov, D.O.
    Bondarenko, V.V.
    Konovalenko, A.A.
    Skurska, M.M.
    Konovalenko, I.S.
    Suchikova, Y.O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175768.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    semiconductors
    nanostructures
    chemical criterion
    indium phosphide
    quality indicators
    półprzewodniki
    nanostruktury
    kryterium chemiczne
    fosforek indu
    wskaźniki jakości
    Opis:
    Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 110, 1; 18--26
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Functional model for the synthesis of nanostructures of the given quality level
    Autorzy:
    Suchikova, Y.O.
    Kovachov, S.S.
    Shishkin, G.O.
    Pimenov, D.O.
    Lazarenko, A.S.
    Bondarenko, V.V.
    Bogdanov, I.T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175807.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    functional model
    electrochemical etching
    quality level
    semiconductors
    nanostructures
    IDEF0 methodology
    model funkcjonalny
    trawienie elektrochemiczne
    poziom jakości
    półprzewodniki
    nanostruktury
    metodologia IDEF0
    Opis:
    Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Justification of the most rational method for the nanostructures synthesis on the semiconductors surface
    Autorzy:
    Suchikova, Y.
    Vambol, S.
    Vambol, V.
    Mozaffari, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/368501.pdf
    Data publikacji:
    2019
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    hierarchies’ analysis method
    chemical etching
    electrochemical etching
    lithographic etching
    nanostructures synthesis
    metoda hierarchii analitycznej
    trawienie chemiczne
    wytrawianie elektrochemiczne
    litografia
    synteza nanostruktur
    Opis:
    Purpose: of this paper is to justification the most rational method for the nanostructures synthesis on the semiconductors surface, which is capable of providing high quality synthesized nanostructures at low cost and ease of the process. Design/methodology/approach: The choice of the optimal method of synthesis was carried out using the hierarchy analysis method, which is implemented by decomposing the problem into more simple parts and further processing judgments at each hierarchical level using pair comparisons. Findings: The article describes the main methods of synthesis of nanostructures, presents their advantages and disadvantages. The methods were evaluated by such criteria as: environmental friendliness, efficiency, stages number of the technological process, complexity, resources expenditure and time and effectiveness. Using the hierarchy analysis method, has been established that electrochemical etching is the most important alternative, and when choosing a nanostructures synthesis method on the semiconductors surface, this method should be preferred. Such studies are necessary for industrial serial production of nanostructures and allow reducing expenses at the realization of the problem of synthesis of qualitative samples. Research limitations/implications: In this research, the hierarchy analysis method was used only to select a rational method for synthesizing nanostructures on the semiconductors surface. However, this research needs to be developed with respect to establishing a correlation between the synthesis conditions and the nanostructures acquired properties. Practical implications: First, was been established that the optimal method for the nanostructures synthesis on the semiconductors surface is electrochemical etching, and not lithographic or chemical method. This allowed the theoretical and empirical point of view to justify the choice of the nanostructures synthesis method in the industrial production conditions. Secondly, the presented method can be applied to the synthesis method choice of other nanostructures types, which is necessary in conditions of resources exhaustion and high raw materials cost. Originality/value: In the article, for the first time, the choice of the nanostructures synthesis method on the semiconductors surface is presented using of paired comparisons of criteria and available alternatives. The article will be useful to engineers involved in the nanostructures synthesis, researchers and scientists, as well as students studying in the field of "nanotechnology".
    Źródło:
    Journal of Achievements in Materials and Manufacturing Engineering; 2019, 92, 1-2; 19-28
    1734-8412
    Pojawia się w:
    Journal of Achievements in Materials and Manufacturing Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimal ranges determination of morphological parameters of nanopatterned semiconductors quality for solar cells
    Autorzy:
    Suchikova, Y. O.
    Bogdanov, I. T.
    Kovachov, S. S.
    Kamensky, D. V.
    Myroshnychenko, V. O.
    Panova, N. Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1818496.pdf
    Data publikacji:
    2020
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    nanopattern
    solar cells
    morphological parameters
    quality
    nanowzór
    ogniwa słoneczne
    parametry morfologiczne
    jakość
    Opis:
    Purpose: The paper aims to determine the values of the main morphological characteristics of nanopatterns, which can be considered as the reference for use as surfaces of solar cells. Design/methodology/approach: The article uses an approach based on the definition of reference indicators of nanopatterns for solar cells by analysing the main parameters of solar cells and comparing them with the possible values of morphological parameters. Correlations of pore radius and visible wavelength, porosity and visible range, wavelength of de Broglie, nanopatterned layer thickness and charge carriers diffusion length, etc., are analysed. Compliance verification of morphological characteristics of nanopatterns with the specified criteria was performed on the example of porous silicon layers. Findings: The conducted research allowed to define the basic values of morphological parameters of porous nanopatterns, namely porousness, pore size (effective diameter), the thickness of the porous layer, and form factor. Reference ranges of morphological parameters of nanopatterns formed on the surface of semiconductors for applications in solar cells are established. Research limitations/implications: The article is devoted to the choice of optimal morphological characteristics of porous nanopatterns on the surface of semiconductors for solar cells. However, for solar cells, other types of nanopatterns can also be applied, for which it is also necessary to develop methods for selecting optimal parameters. Moreover, the prospect of research on this topic is to check the intrusion into a certain range of values of real nanopatterns formed on the surface of semiconductors. Practical implications: In the article the methodology allowing to choose optimal values of morphological parameters of nanopatterns for its application for solar cells is considered. Such studies are of great practical importance for the production of high-quality solar cells based on nanopatterned semiconductors. Originality/value: The article for the first time considers the choice of the nanopattern type and the ranges of morphological parameters in terms of quality assurance of the final product - the solar cell. It is determined that it is necessary to take into account such factors as porousness, pore size, thickness of the porous layer and roundness. A range of optimal values is selected for each of the indicators.
    Źródło:
    Archives of Materials Science and Engineering; 2020, 101, 1; 15--24
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxide crystals on the surface of porous indium phosphide
    Autorzy:
    Suchikova, Y. O.
    Bogdanov, I. T.
    Kovachov, S. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/378528.pdf
    Data publikacji:
    2019
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    oxide clusters
    electrochemical etching
    indium phosphide
    dislocations
    skupiska tlenków
    trawienie elektrochemiczne
    fosforek indu
    Opis:
    Purpose: f this paper is to is to establish the patterns of oxide formation on the surface of indium phosphide during electrochemical etching of mono-InP. Design/methodology/approach: A porous surface was formed with the anode electrolytic etching. Morphology of the surface was studied with the help of scanning electron microscope JSM-6490. The analysis of chemical composition of porous surface of samples was also performed. Findings: It was shown that during the electrochemical etching of indium phosphide, oxide films and crystallites form on the surface. It has been established that crystalline oxides are formed mainly on the surface of n-type indium phosphide. Continuous oxide films are predominantly formed on the surface of p-InP. Research limitations/implications: The research was carried out for indium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for crystalline oxides on the surface of porous indium phosphide obtained in other conditions, is necessary. Practical implications: The study of oxide crystals on the surface of porous indium phosphide has great practical importance since it is the reproducibility of experimental results that is the main problem of modern materials science, the more nanoengineering. Oxides can significantly affect the properties of materials. On the one hand, oxides significantly affect the recombination properties of materials, this can impair the operation of semiconductor devices. On the other hand, oxide films can serve as a passivating coating for the surface of a porous semiconductor. Such an oxide property will be useful for the practical application of nanostructured indium phosphide. Therefore, questions of the conditions for the formation of semiconductor intrinsic oxides, their structure, and chemical composition, and also the effect of oxides on the physical and technical characteristics of materials are important. Originality/value: The patterns of oxide formation on the surface of indium phosphide during electrochemical etching are investigated in this work. It is shown for the first time that the structure of an oxide depends on the orientation of the surface of the semiconductor. It was shown that continuous oxide films are formed on the surface of p-InP, and oxide crystalline clusters are formed on the surface of n-InP.
    Źródło:
    Archives of Materials Science and Engineering; 2019, 98, 2; 49-56
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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