Autor: Strzałkowski, I. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: SiO$\text{}_{2}$ Layer Charge State Variation in Fowler-Nordheim Tunneling Regime
Autorzy:: Strzałkowski, I.
Kowalski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1967939.pdf
Data publikacji:: 1997-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Qv
Opis:: The charge build-up and its changes in the amorphous SiO$\text{}_{2}$ layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO$\text{}_{2}$ traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Źródło:: Acta Physica Polonica A; 1997, 92, 3; 585-590
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electric Field Stimulated Emission of Electrons from Deep Traps in SiO$\text{}_{2}$
Autorzy:: Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Powiązania:: https://bibliotekanauki.pl/articles/1929724.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Qv
73.60.Hy
Opis:: An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO$\text{}_{2}$ layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO$\text{}_{2}$.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 701-704
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: On Trap Generation in SiO$\text{}_{2}$ Films of Si MOSFETS by Hot Electrons
Autorzy:: Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Bąkowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1921597.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Qv
73.60.Hy
Opis:: Trap generation in amorphous SiO$\text{}_{2}$ films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10$\text{}^{19}$ e/cm$\text{}^{-2}$ and injected current density in the range 2-300 μA/cm$\text{}^{2}$ were determined and discussed.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 685-688
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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