Autor: Sofronov, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure
Autorzy:: Shalygin, V.
Vorobjev, L.
Firsov, D.
Sofronov, A.
Melentyev, G.
Lundin, W.
Nikolaev, A.
Sakharov, A.
Tsatsulnikov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506221.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Dn
73.50.Fq
78.60.Fi
Opis:: In the present paper we report on the observation and study of intense spontaneous THz emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of two-dimensional electron gas in lateral electric field. The experimental results are compared with the model of blackbody-like thermal emission of hot 2D electrons. Complementary transport measurements and theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of non-equilibrium optical phonon accumulation is discussed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 241-243
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
Autorzy:: Vorobjev, L.
Firsov, D.
Shalygin, V.
Panevin, V.
Sofronov, A.
Ustinov, V.
Zhukov, A.
Egorov, A.
Andrianov, A.
Zakhar'in, A.
Ganichev, S.
Danilov, S.
Kozlov, D.
Powiązania:: https://bibliotekanauki.pl/articles/1813218.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Fg
71.55.-i
71.55.Eq
73.21.Fg
73.61.Ey
78.55.Cr
78.66.-w
78.67.De
Opis:: We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 925-928
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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