- Tytuł:
- Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO$\text{}_{2}$ Matrix
- Autorzy:
-
Zhuravlev, K.
Tyschenko, I.
Vandyshev, E.
Bulytova, N.
Misiuk, A.
Rebohle, L.
Skorupa, W. - Powiązania:
- https://bibliotekanauki.pl/articles/2035528.pdf
- Data publikacji:
- 2002-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.Ac
73.63.Bd
78.67.-n
68.35.Fx - Opis:
- The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO$\text{}_{2}$ films was studied. A "blue"-shift of PL spectrum from the SiO$\text{}_{2}$ films implanted with Si$\text{}^{+}$ ions to total dose of 1.2×10$\text{}^{17}$ cm$\text{}^{-2}$ with an increase in hydrostatic pressure was observed. For the films implanted with Si$\text{}^{+}$ ions to a total dose of 4.8×10$\text{}^{16}$ cm$\text{}^{-2}$ high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.
- Źródło:
-
Acta Physica Polonica A; 2002, 102, 2; 337-344
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł