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Wyszukujesz frazę "Skorokhod, M. J." wg kryterium: Autor

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Transport Properties of $CeCo_{12}B_6$ in Vicinity of Phase Transition
    Autorzy:
    Skorokhod, Y.
    Arnold, Z.
    Míšek, M.
    Kamarád, J.
    Isnard, O.
    Mayot, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813635.pdf
    Data publikacji:
    2008-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Kz
    75.40.-s
    72.15.Eb
    Opis:
    Study of resistivity and specific heat on $CeCo_{12}B_6$ compound was performed in a temperature range 2.5-300 K. The specific heat exhibits pronounced λ-type anomaly in the vicinity of the Curie temperature $T_C$. Using the Debye-Einstein model the following parameters were obtained: the Debye temperature $θ_D$ = 185 K, coefficient of the electron specific heat $γ_{el}$ = 115 mJ/mol K. The parabolic temperature dependence of resistivity ρ(T) = $ρ_0 + A_ρT^2$ was observed below $T_C$ in agreement with ferromagnetic state. Comparison of dρ/dT(T) with $C_M(T)$ allows to confirm their similar character, accordingly to theory of critical behavior.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 1; 259-262
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic and Transport Properties of $CeCo_{12}B_6$ and $CeFe_2Co_{10}B_6$ Compounds under Pressure
    Autorzy:
    Míšek, M.
    Arnold, Z.
    Skorokhod, Y.
    Kamarád, J.
    Isnard, O.
    Mayot, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813638.pdf
    Data publikacji:
    2008-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.10.-b
    75.25.+z
    75.30.Kz
    Opis:
    Study of pressure effects on magnetic and transport properties of $CeCo_{12}B_6$ and $CeFe_2Co_{10}B_6$ was performed in temperature range 5-300 K at pressures up to 9 kbar. The significant decrease in the Curie temperature $T_C$ as a consequence of Fe substitution from (135±1) K to (85±1) K is not accompanied by the changes of saturation magnetization. The decrease in $T_C$ with pressure is the same for both samples -Δ$T_C$/Δp ≈ -0.5 K/kbar. The relative decrease in saturation magnetization with pressure is about 0.3%/kbar for both samples. Pressure induced resistivity changes were below 1%. The relatively low pressure effect on both the $T_C$ and magnetization can be attributed to the hybridization as a consequence of small distances between the Co and B atoms.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 1; 263-266
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation
    Autorzy:
    Khrupa, V. I.
    Grigoryev, D. O.
    Skorokhod, M. Ya.
    Datsenko, L. I.
    Bąk-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931661.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.70.-r
    Opis:
    Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α$\text{}_{1}}$ line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 591-596
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals
    Autorzy:
    Auleytner, J.
    Skorokhod, M. Ya.
    Datsenko, L. I.
    Khrupa, V. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945730.pdf
    Data publikacji:
    1996-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Cc
    61.72.Ff
    81.40.Cd
    Opis:
    Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 3; 541-546
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions
    Autorzy:
    Auleytner, J.
    Khrupa, V. I.
    Datsenko, L. I.
    Krasulya, S. M.
    Skorokhod, M. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945213.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.35.Bs
    Opis:
    Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 301-307
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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