Autor: Shubina, T. V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates
Autorzy:: Kaygorodov, V. A.
Sorokin, V. S.
Sedova, I. V.
Nekrutkina, O. V.
Sorokin, S. V.
Shubina, T. V.
Toropov, A. A.
Ivanov, S. V.
Powiązania:: https://bibliotekanauki.pl/articles/2028799.pdf
Data publikacji:: 2001-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Hf
Opis:: We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Źródło:: Acta Physica Polonica A; 2001, 100, 3; 443-450
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical Absorption in Periodic InN:In Structures
Autorzy:: Plotnikov, D. S.
Shubina, T. V.
Jmerik, V. N.
Semenov, A. N.
Ivanov, S. V.
Powiązania:: https://bibliotekanauki.pl/articles/2047375.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
71.45.Gm
Opis:: Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 191-196
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Autorzy:: Shevchenko, E.
Toropov, A.
Nechaev, D.
Jmerik, V.
Shubina, T.
Ivanov, S.
Yagovkina, M.
Pozina, G.
Bergman, J.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1376069.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.De
78.55.Cr
71.35.-y
78.66.-w
Opis:: We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1140-1142
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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