Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Shishkin, D." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Functional model for the synthesis of nanostructures of the given quality level
Autorzy:
Suchikova, Y.O.
Kovachov, S.S.
Shishkin, G.O.
Pimenov, D.O.
Lazarenko, A.S.
Bondarenko, V.V.
Bogdanov, I.T.
Powiązania:
https://bibliotekanauki.pl/articles/2175807.pdf
Data publikacji:
2021
Wydawca:
Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
Tematy:
functional model
electrochemical etching
quality level
semiconductors
nanostructures
IDEF0 methodology
model funkcjonalny
trawienie elektrochemiczne
poziom jakości
półprzewodniki
nanostruktury
metodologia IDEF0
Opis:
Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
Źródło:
Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
1897-2764
Pojawia się w:
Archives of Materials Science and Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substitution effects on the magnetic properties of Fe-containing chalcogenides with NiAs-type structures
Autorzy:
Baranov, N.
Selezneva, N.
Sherokalova, E.
Gubkin, A.
Sherstobitov, A.
Shishkin, D.
Powiązania:
https://bibliotekanauki.pl/articles/1050741.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Kz
75.50.Vv
75.60.-d
Opis:
The changes in the magnetization processes caused by Se for S substitutions in the layered chalcogenide compounds Fe_{x}TiS_{2-y}Se_{y} (x=0.5, 0.66) with antiferromagnetic (AF) and ferrimagnetic (FI) orderings, respectively, have been studied by using the magnetization and magnetoresistance measurements. Unusually high values of the coercive fields (H_{c} up to 56 kOe) have been observed at low temperatures in Fe_{0.5}TiS_{2-y}Se_{y} with the Se content y<0.5, which is ascribed to the presence of an unquenched orbital moment on Fe ions and to the formation of a magnetically heterogeneous state in the vicinity of H_{c}. The Se for S substitution in Fe_{0.66}TiS_{2-y}Se_{y} leads to the transition from the FI to AF state and to non-monotonous change of H_{c} with a maximal value 22 kOe an y=0.5. The changes in the magnetic state of Fe_{x}TiS_{2-y}Se_{y} are suggested to be strongly affected by the distribution of Fe ions and vacancies in cationic layers.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 447-449
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies