- Tytuł:
- High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects
- Autorzy:
-
Shchennikov, V.
Shchennikov, Vs.
Korobeynikov, I.
Morozova, N. - Powiązania:
- https://bibliotekanauki.pl/articles/1399450.pdf
- Data publikacji:
- 2013-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.uf
81.40.Vw
72.20.Pa
62.50.-p
05.70.Fh - Opis:
- The thermoelectric properties of a set of single crystalline Si wafers with different oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductor-metal transition pressure at Czochralski grown Si on the concentration $c_{O}$ of the interstitial oxygen was found to present a convex curve with the maximum near $c_{O} \approx 9 \times 10^{17} cm^{-3}$. The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers. For $Si_{1 - x}Ge_{x}$ crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductor-metal electronic transformation has been detected at the loading up to ≈ 10 mN. These findings suggest a way for creation of integrated circuits, in which zones with different types of conductivity and hence different p-n, p-n-p etc. structures may be "written" by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 2; 244-249
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł