- Tytuł:
- Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN
- Autorzy:
-
Matulionis, A.
Liberis, J.
Eastman, L. F.
Schaff, W. J.
Shealy, J. R.
Chen, X.
Sun, Y. J. - Powiązania:
- https://bibliotekanauki.pl/articles/2041771.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
63.20.Kr
72.20.Ht
73.40.Kp - Opis:
- Microwave noise temperature, current, and dissipated power were investigated at room temperature in undoped AlGaN/AlN/GaN channels grown by molecular beam epitaxy and metal-organic compound vapour decomposition techniques. Samples with essentially the same electron density (1×10$\text{}^{13}$ cm$\text{}^{-2}$) and low-field mobility (1150 cm$\text{}^{2}$/(V s)) demonstrated considerably different behaviour at high electric fields. The effective hot-phonon lifetime, 300 fs and 1000 fs, respectively, was estimated for molecular beam epitaxy and metal-organic compound vapour decomposition samples. The expected anti-correlation of hot-phonon lifetime and hot-electron drift velocity was confirmed experimentally.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 361-364
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł