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    Wyświetlanie 1-6 z 6
    Tytuł:
    Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
    Autorzy:
    Krynicki, J.
    Rzewuski, H.
    Turos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924215.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.70.Tm
    Opis:
    Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He$\text{}^{+}$ channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 871-875
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
    Autorzy:
    Krynicki, J.
    Warchoł, S.
    Rzewuski, H.
    Groetzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932091.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    Opis:
    Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 249-252
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
    Autorzy:
    Krynicki, J.
    Rzewuski, H.
    Groetzschel, R.
    Claverie, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886822.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.70.Tm
    Opis:
    Amorphization of GaAs implanted with Cd in the dose range of 2 x 10$\text{}^{13}$-1.2 x 10$\text{}^{14}$ ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 349-353
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Post-implantation defects instability under 1 MeV electron irradiation in GaAs
    Autorzy:
    Warchoł, S.
    Rzewuski, H.
    Krynicki, J.
    Grötzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/146724.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    electron annealing
    GaAs
    implantation
    Opis:
    The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.
    Źródło:
    Nukleonika; 2000, 45, 4; 225-228
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs
    Autorzy:
    Warchoł, S.
    Rzewuski, H.
    Krynicki, J.
    Grotzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/147146.pdf
    Data publikacji:
    2002
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    electron annealing
    GaAs
    implantation
    Opis:
    The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.
    Źródło:
    Nukleonika; 2002, 47, 1; 19-21
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Changes in Luminescence of Ce:yag Crystals Under Ionizing Radiation Treatment
    Autorzy:
    Kaczmarek, S. M.
    Moroz, Z.
    Kwasny, M.
    Kisielewski, J.
    Lukasiewicz, T.
    Wojtkowska, J.
    Rzewuski, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2008301.pdf
    Data publikacji:
    1999-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ji
    61.80.Ed
    Opis:
    Radiation induced changes in the luminescence spectrum under influence of UV light, γ-rays, electrons and protons for several concentrations of Ce$\text{}^{3+}$ ions as well as Mg$\text{}^{2+}$ ions in yttrium-aluminum garnet crystals were investigated. To irradiate with γ and electron as grown crystals were used while for proton irradiations the crystals were thermally annealed. For small concentrations of cerium ions (≈0.01 at.%) an increase in the luminescence (about 100%) was observed after gamma irradiation with a dose of 10$\text{}^{5}$ Gy. This increase was due to the growth in Ce$\text{}^{3+}$ ions concentration after γ-irradiation (≈50%), due to the Ce$\text{}^{4+}$ → Ce$\text{}^{3+}$ recharging reaction. For highly doped Ce:YAG crystals (0.1 at%, 0.2 at.%) also an increase, but much smaller (4%), for the Mg codoped crystals (0.1 at.%) was observed. After 1 MeV electron irradiation in the over-threshold type interaction a decrease in luminescence is observed due to the domination of the Ce$\text{}^{3+}$ → Ce$\text{}^{4+}$ ionization process. In the case of the proton irradiation, for small fluencies (≈10$\text{}^{13}$ particles/cm$\text{}^{2}$) an increase in luminescence is observed due to the domination of the recharging processes of Ce$\text{}^{4+}$ ions. For larger fluencies (>10$\text{}^{14}$ particles/cm$\text{}^{2}$) a decrease takes place due to a high level of radiation defects.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 6; 953-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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