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Wyświetlanie 1-15 z 16
Tytuł:
Diffusion Length Studies in CdMnTe by the Surface Photovoltage Method
Autorzy:
Płaczek-Popko, E.
Szaro, L.
Jędral, L.
Powiązania:
https://bibliotekanauki.pl/articles/1879853.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
Opis:
The surface phototovoltage method provides a nondestructive means of measuring minority carriers diffusion length and is suitable for process control applications and for material acceptance tests. Application of the method in the case of CdMnTe compounds has been studied in the present paper. The optimum measurement conditions have been investigated by studying the dependence of measured diffusion length on the experimental conditions. As the surface photovoltage method requires the exact values of absorption coefficient as a function of wavelength, α = f(λ), the dependence has been determined. The minority carrier diffusion length for the sample investigated has been found to be equal to several tenth of μm.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 187-190
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:
Trzmiel, J.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1791364.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
61.72.jj
77.22.-d
Opis:
The dielectric response of gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for $Cd_{0.99}Mn_{0.01}Te:Ga$ samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 956-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Hansen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1992215.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Eq
Opis:
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al$\text{}_{0.5}$Ga$\text{}_{0.5}$As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E$\text{}_{H1}$=0.15 eV, E$\text{}_{H3}$=0.4 eV, and E$\text{}_{H4}$=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 565-569
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels in Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te:Ga
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Bieg, B.
Powiązania:
https://bibliotekanauki.pl/articles/1992339.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Gs
Opis:
Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts
Autorzy:
Płaczek-Popko, E.
Trzmiel, J.
Gumienny, Z.
Wojtyna, E.
Szatkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811971.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
85.30.De
84.37.+q
Opis:
The dielectric response of Au-CdTe gallium doped Schottky contacts was investigated by impedance spectroscopy in the frequency range from 0.2 Hz to 3 MHz, at temperatures in the range from 77 K to 300 K. Combined modulus and impedance spectroscopic plots were analyzed to study the response of the structure. The data were fitted with the simple RC circuit composed of a depletion layer capacitance in parallel with resistance and a series resistance of the bulk CdTe:Ga. The activation energy of the bulk trap obtained from the Arrhenius plot of the resistance was found to be equal to 0.08 eV, close to the value 0.09 eV obtained from the impedance-modulus spectroscopy. The trap dominant in CdTe:Ga is possibly the DX center related, as it has been observed that this is the dominant trap in the material.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1279-1283
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:
Trzmiel, J.
Płaczek-Popko, E.
Weron, K.
Szatkowski, J.
Wojtyna, E.
Powiązania:
https://bibliotekanauki.pl/articles/1812001.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
61.72.jj
78.20.Bh
Opis:
The low temperature non-exponential transients of photoconductivity build-up in gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of $Cd_{0.99}Mn_{0.01}Te:Ga$ the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1417-1420
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman spectroscopy of CdTe/ZnTe quantum dot structures
Autorzy:
Zielony, E
Placzek-Popko, E
Kamyczek, P
Henrykowski, A
Karczewski, G
Powiązania:
https://bibliotekanauki.pl/articles/174898.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
Raman spectroscopy
CdTe
ZnTe
quantum dot structures
Opis:
Semiconductor low-dimensional structures of CdTe quantum dots (QDs) embedded in ZnTe matrix have been investigated by micro-Raman spectroscopy. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by a molecular beam epitaxy technique on the p-type GaAs substrate. The Raman measurements have been performed at room temperature. The samples were excited by an Ar2+ laser of 514.5 nm wavelength. The Raman spectra have been recorded for different acquisition parameters of the measurement. For the reference and QD sample localized longitudinal (LO) phonons of 210 cm–1 wavenumber associated with the ZnTe layer are observed. In the case of QD sample another broadband corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm–1. Such behaviour does not exhibit the Raman spectra of the reference sample. Thus the Raman measurements confirm the presence of CdTe layer of quantum dots in the investigated material. Additionally, Raman spectra for both samples exhibit tellurium-related peaks at wavenumbers around 120 cm–1 and 140 cm–1, significantly increasing with laser time exposure. It is shown that the peaks are associated with the formation of Te aggregates on the ZnTe surface due to the laser damage in the ZnTe layer.
Źródło:
Optica Applicata; 2013, 43, 1; 181-185
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of Au/n-GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ Contacts
Autorzy:
Szatkowski, J.
Kasprzak, J. F.
Płaczek-Popko, E.
Radojewska, E. B.
Powiązania:
https://bibliotekanauki.pl/articles/1879840.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
72.80.Ey
Opis:
The Schottky barrier heights of Au on n-type GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 179-182
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
Autorzy:
Dyba, P.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Szatkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791359.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
85.30.De
84.37.+q
Opis:
Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 944-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
Autorzy:
Placzek-Popko, E.
Szatkowski, J.
Zielony, E.
Gumienny, Z.
Dobaczewski, L.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048047.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 621-623
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:
Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791335.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 885-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopy Studies of CdMnTe
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Hajdusianek, A.
Kuźmiński, S.
Bieg, B.
Becla, P.
Powiązania:
https://bibliotekanauki.pl/articles/1873000.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
Opis:
Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 387-390
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy
Autorzy:
Dyba, P.
Placzek-Popko, E.
Zielony, E.
Gumienny, Z.
Grzanka, S.
Czernecki, R.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/2048090.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
71.55.Eq
73.40.Kp
Opis:
p$\text{}^{+}$-n GaN diodes were studied by means of conventional deep level transient spectroscopy and Laplace transform deep-level spectroscopy methods within the temperature range of 77-350 K. Deep level transient signal spectra revealed the presence of a majority and minority trap of indistinguishable signatures. The Laplace transform deep-level spectroscopy technique due to its superior resolution allows us to unambiguously identify and characterize the traps. The apparent activation energy and capture cross-section for the majority trap were found to be equal to 0.63 eV and 2 × 10$\text{}^{-16}$ cm$\text{}^{2}$ and for the minority trap 0.66 eV and 1.6 × 10$\text{}^{-15}$ cm$\text{}^{2}$. It has been confirmed that the Laplace transform deep-level spectroscopy technique is a powerful tool in characterization of the traps of close signatures.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 669-671
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Struktury fotowoltaiczne oparte o heterozłącze ZnO/Si
Photovoltaic Structures Based on Heterojunction Zno/Si
Autorzy:
Pietruszka, R.
Łuka, G.
Witkowski, B. S.
Kopalko, K.
Zielony, E.
Biegański, P.
Płaczek-Popko, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/952439.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
fotowoltaika
tlenek cynku
metoda osadzania warstw atomowych
photovoltaic
zinc oxide
Opis:
Warstwy tlenku cynku otrzymane metodą osadzania warstw atomowych ALD zostały użyte jako n-typu partner dla p-typu krzemu. Jako przezroczystą górną elektrodę wybrano warstwę tlenku cyku domieszkowaną glinem (tak zwana warstwa TCO – Transparent Conductive Oxide). Użyto tanich podłóż krzemowych o niezoptymalizowanej dla zastosowań fotowoltaicznych grubości. W niniejszej pracy badano proste struktury fotowoltaiczne ZnO/Si w celu redukcji kosztów produkcji energii elektrycznej pozyskiwanej za pomocą ogniw fotowoltaicznych. Zmierzona sprawność zoptymalizowanych częściowo (warstwy ZnO) ogniw fotowoltaicznych wyniosła 6%.
We report on the properties of photovoltaic (PV) structures based on thin films of n-type zinc oxide grown by atomic layer deposition method on a cheap silicon substrate. Thin films of ZnO are used as n-type partner to p-type Si (110) and, when doped with Al, as a transparent electrode. PV structures with different electrical parameters and thicknesses of ZnO layers were deposited to determine the optimal performance of PV structures. The best response we obtained for the structure with ZnO layer thickness of 800 nm. The soobtained PV structures show 6% efficiency.
Źródło:
Prace Instytutu Elektrotechniki; 2014, 264; 113-123
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels Induced by CdTe/ZnTe Quantum Dots
Autorzy:
Zielony, E.
Placzek-Popko, E.
Roznicka, A.
Gumienny, Z.
Szatkowski, J.
Dyba, P.
Pacuski, W.
Kruse, C.
Hommel, D.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048061.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 630-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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