Autor: Peaker, A. R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Implantation of Rare-Earth Atoms into Si and III-V Compounds
Autorzy:: Kozanecki, A.
Langer, J. M.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1924312.pdf
Data publikacji:: 1993-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
78.55.-m
Opis:: Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
Źródło:: Acta Physica Polonica A; 1993, 83, 1; 59-70
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:: Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
71.55.Cn
68.55.Ln
Opis:: Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Formation of the DX State by Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As - Experiment
Autorzy:: Dobaczewski, L.
Kaczor, P.
Missous, M.
Żytkiewicz, Z. R.
Dobosz, D.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1924251.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.38.+i
71.55.Eq
78.50.Ge
Opis:: A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 905-907
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys
Autorzy:: Dobaczewski, L.
Bonde Nielsen, K.
Nylandsted Larsen, A.
Lundsgaard Hansen, J.
Gościński, K.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1969056.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
71.55.Cn
73.40.Lq
Opis:: In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 297-299
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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