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    Wyświetlanie 1-13 z 13
    Tytuł:
    Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures
    Autorzy:
    Macherzynski, W
    Indykiewicz, K
    Paszkiewicz, B
    Powiązania:
    https://bibliotekanauki.pl/articles/174572.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    ohmic contact
    AlGaN/GaN heterostructures
    surface morphology
    Opis:
    Ohmic contacts to AlGaN/GaN heterostructures, which have low contact resistance and a good surface morphology, are required for the development of high temperature, high power and high frequency electronic devices. The paper presents the investigation of a Ti/Al based Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructures. Multilayer metallization of Ti/Al/Ni/Au was evaporated by an electron gun (titanium and nickel layers) and a resistance heater (aluminum and gold layers). The contacts were annealed by rapid thermal annealing (RTA) system in a nitrogen ambient atmosphere over the temperature range from 715 to 865 °C. The time of the annealing process was 60 seconds. The chemical analysis, formation and deterioration mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures were studied as a function of the annealing process conditions by a scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS).
    Źródło:
    Optica Applicata; 2013, 43, 1; 67-72
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improvement of the electron beam lithography contact pads fabrication process
    Autorzy:
    Indykiewicz, K.
    Paszkiewicz, R.
    Paszkiewicz, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/173623.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    electron beam lithography
    EBL
    exposition of big areas
    exposition time optimization
    Opis:
    In the paper, the verification of using the electron beam lithography technique as a main lithography tool for device fabrication is presented. The results of conducted experiments allow us to minimize the exposition time of big areas and retain acceptable metallic structures resolution and designed distances for structures in the neighborhood of a few micrometers. Conducted statistical analysis allows us to define the significance of the selected factors influence on the objectives of this study.
    Źródło:
    Optica Applicata; 2016, 46, 2; 249-254
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Measurements of AlGaN/GaN heterostructures for sensor applications
    Autorzy:
    Hojko, M R
    Paszuk, D
    Paszkiewicz, B
    Powiązania:
    https://bibliotekanauki.pl/articles/174545.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    sensor
    AlGaN/GaN heterostructure
    electrolyte
    two-dimensional electron gas (2DEG)
    pH
    Opis:
    In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.
    Źródło:
    Optica Applicata; 2013, 43, 1; 35-38
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
    Autorzy:
    Wosko, M
    Paszkiewicz, B
    Paszkiewicz, R
    Tlaczala, M
    Powiązania:
    https://bibliotekanauki.pl/articles/174100.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    AlGaN/GaN
    heterostructure
    AlN spacer
    MOVPE
    Opis:
    AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobility of two-dimensional electron gas (2DEG) is the alloy and interface roughness scattering mechanism occurring at the heterointerface. Mathematical calculations of a wave-function of 2DEG in the channel show that theses two phenomena play an important role, due to the fact that some electrons in 2DEG can migrate into AlGaN barrier and be strongly dissipated. One of the proposed solutions against alloy scattering in the buffer layer is the use of thin AlN spacer at the heterointerface between AlGaN and GaN layers. AlN layer enhances the conduction band offset due to a polarization-induced dipole in the AlN layer, and therefore increases carrier confinement. Several Al0.18GaN0.82/AlN/GaN heterostructures with different AlN spacer layer thickness were grown by MOVPE method for studies of the Hall mobility and sheet carrier concentration of 2DEG. Hall measurements performed using Van der Pauw shown mobility maximum at nominally 1.3 nm AlN spacer thickness and almost linear dependence of sheet carrier concentration with AlN spacer thickness in the range from 0.7 to 2 nm.
    Źródło:
    Optica Applicata; 2013, 43, 1; 61-66
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
    Autorzy:
    Boratyński, B.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1585274.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Hd
    85.30.De
    85.30.Tv
    Opis:
    AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× $10^{12} cm^{-2}$ and mobility of 1600 $cm^{2}$/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 800-805
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of surface coating with palladium on hydrogen permeability of Pd33Ni52Si15 amorphous alloy membrane
    Autorzy:
    Prochwicz, W.
    Macherzyński, W.
    Paszkiewicz, B.
    Stępień, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/173174.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    permeability
    hydrogen
    palladium alloys
    metallic glasses
    Opis:
    In the paper, the effect of the surface coating with palladium on hydrogen permeation of a Pd33Ni52Si15 amorphous alloy membrane was investigated. We have measured the hydrogen flow through the melt-spun amorphous membrane covered with palladium film of 10, 20, and 30 nm in thickness. Membranes have been tested in the temperature rage 294–358 K, and at pressure fixed at 102 kPa. We investigate the role of this film thickness on the activation energy for hydrogen permeability. It seemed that a relatively thin layer of the palladium on the surface of the membrane which contains over 30% of this element, should not considerably influence the permeability of the membrane for hydrogen. The membrane hydrogen permeability is correlated to permeation activation energy: the lower activation energy is, the higher permeability is observed. The activation energy for permeation strongly depends on palladium film thickness. The rapid increase of its value was recorded when the film thickness was growing up. As the result, the increase of the film thickness suppressed hydrogen permeability. Our findings are discussed in terms of a potential barrier between the two different phases.
    Źródło:
    Optica Applicata; 2016, 46, 2; 173-179
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
    Autorzy:
    Gryglewicz, J
    Stafiniak, A
    Wosko, M
    Prazmowska, J
    Paszkiewicz, B
    Powiązania:
    https://bibliotekanauki.pl/articles/174309.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    reactive ione etching
    HEMT
    AlGaN/GaN heterostructure
    Opis:
    In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.
    Źródło:
    Optica Applicata; 2013, 43, 1; 27-33
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dynamics of Hydrogen Bonds in TGS Crystals Observed by Means of Measurements of Pyroelectric Currents Induced by Linear Changes of Temperature
    Autorzy:
    Trybus, M.
    Paszkiewicz, T.
    Woś, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032468.pdf
    Data publikacji:
    2017-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.70.+a
    77.84.Fa
    77.80.B-
    Opis:
    The study of pyroelectric response of monocrystalline TGS cubic specimens to changes of temperature induced by linear and pulse heating of three mutually perpendicular pairs of cube sides demonstrated a complicated structure of signals. We attribute their forms to the activation of various hydrogen bonds between glycine G1, G2, and G3 molecules. In the case of pulse heating the pyroelectric signal is observed also in the paraelectric phase.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 1; 161-163
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The use of the Circular Hough Transform for counting coins
    Autorzy:
    Gomółka, Z.
    Żesławska, E.
    Twaróg, B.
    Paszkiewicz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/114081.pdf
    Data publikacji:
    2015
    Wydawca:
    Stowarzyszenie Inżynierów i Techników Mechaników Polskich
    Tematy:
    Hough transform
    image detection
    segmentation
    digital image processing
    edge detection
    Opis:
    The paper presents the circular Hough transform in the process of detecting and counting coins. The issues of linear and circular Hough transform are discussed. An algorithm for counting coins in a three-dimensional image using the discrete Hough space is demonstrated. Moreover, the results of the application for detecting and counting coins in a static image and video stream are presented. Observations of histograms for HSV and RGB color palettes, for different camera resolutions and various parameters of image segmentation, edge detection and smoothing filter have been made.
    Źródło:
    Measurement Automation Monitoring; 2015, 61, 9; 434-437
    2450-2855
    Pojawia się w:
    Measurement Automation Monitoring
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Response of Superconductor Bolometer to Phonon Fluxes
    Autorzy:
    Danilchenko, B. A.
    Jasiukiewicz, Cz.
    Paszkiewicz, T.
    Wolski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035733.pdf
    Data publikacji:
    2003-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    02.30.Hq
    66.70.+f
    Opis:
    A metallic film bolometer with heat capacity C is in contact with thermal bath and with crystalline specimen and is biased by a constant current I$\text{}_{b}$. The thermal contact of the bolometer is characterized by the thermal conductance G. The bolometer operates in the linear regime of dependence of resistance on temperature characterized by a constantα. Experiments which allow one to measureα, C, and G are proposed. The characteristic timeτ=C/G and characteristic current I$\text{}_{m}=\sqrt{\text{G/α}}$ affect the effective relaxation rateΛ of the bolometer resistance R$\text{}_{b}$(t). The knowledge of the power W(t) absorbed by detector allows one to calculate R$\text{}_{b}$(t). The inverse problem of calculation of W(t) from known R$\text{}_{b}$(t) is also solved. The suitable algorithms are proposed. Deconvoluted absorbed power is obtained for experiments performed on GaAs and compared with phonoconductivity signal of two-dimensional electron gas structure as well as with results of Monte Carlo computer experiments.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 4; 325-338
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Innovation technology for the production of massive slag ladles at the Krakodlew S.A. Foundry. Presentation of design works on research and development
    Autorzy:
    Paszkiewicz, M.
    Guzik, E.
    Kopyciński, D.
    Kalandyk, B.
    Burbelko, A.
    Gurgul, D.
    Sobula, S.
    Ziółko, A.
    Piotrowski, K.
    Bednarczyk, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1840919.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    slag ladles
    ductile cast iron
    cast steel
    large castings
    massive castings
    kadzie żużlowe
    żeliwo sferoidalne
    staliwo
    odlewy wielkogabarytowe
    Opis:
    This article is a description of the progress of research and development in the area of massive large-scale castings - slag ladles implemented in cooperation with the Faculty of Foundry Engineering of UST in Krakow. Slag ladles are the one of the major castings that has been developed by the Krakodlew (massive castings foundry) for many years. Quality requirements are constantly increasing in relation to the slag ladles. Slag ladles are an integral tool in the logistics of enterprises in the metallurgical industry in the process of well-organized slag management and other by-products and input materials. The need to increase the volume of slag ladles is still growing. Metallurgical production is expected to be achieved in Poland by 2022 at the level of 9.4 million Mg/year for the baseline scenario - 2016 - 9 million Mg/year. This article describes the research work carried out to date in the field of technology for the production of massive slag ladles of ductile cast iron and cast steel.
    Źródło:
    Archives of Foundry Engineering; 2020, 20, 4; 67-71
    1897-3310
    2299-2944
    Pojawia się w:
    Archives of Foundry Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polarity Related Problems in Growth of GaN Homoepitaxial Layers
    Autorzy:
    Leszczyński, M.
    Prystawko, P.
    Śliwinski, A.
    Suski, T.
    Litwin-Staszewska, E.
    Porowski, S.
    Paszkiewicz, R.
    Tłaczała, M.
    Beaumont, B.
    Gibart, P.
    Barski, A.
    Langer, R.
    Knap, W.
    Frayssinet, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991873.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Vv
    65.70.+y
    Opis:
    Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 427-430
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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