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Wyszukujesz frazę "Pakula, J." wg kryterium: Autor


Tytuł:
Finite Element Prediction for the Internal Stresses of (Ti,Al)N Coatings
Autorzy:
Żukowska, L. W.
Śliwa, A.
Mikuła, J.
Bonek, M.
Kwaśny, W.
Sroka, M.
Pakuła, D.
Powiązania:
https://bibliotekanauki.pl/articles/354118.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
analysing and modelling
PVD coatings
gradient coatings
internal stresses
Opis:
The general topic of this paper is the computer simulation with use of finite element method (FEM) for determining the internal stresses of selected gradient and single-layer PVD coatings deposited on the sintered tool materials, including cemented carbides, cermets and Al2O3+TiC type oxide tool ceramics by cathodic arc evaporation CAE-PVD method. Developing an appropriate model allows the prediction of properties of PVD coatings, which are also the criterion of their selection for specific items, based on the parameters of technological processes. In addition, developed model can to a large extent eliminate the need for expensive and time-consuming experimental studies for the computer simulation. Developed models of internal stresses were performed with use of finite element method in ANSYS environment. The experimental values of stresses were calculated using the X-ray sin2ψ technique. The computer simulation results were compared with the experimental results. Microhardness and adhesion as well as wear range were measured to investigate the influence of stress distribution on the mechanical and functional properties of coatings. It was stated that occurrence of compressive stresses on the surface of gradient coating has advantageous influence on their mechanical properties, especially on microhardness. Absolute value reduction of internal stresses in the connection zone in case of the gradient coatings takes profitably effects on improvement the adhesion of coatings. It can be one of the most important reasons of increase the wear resistance of gradient coatings in comparison to single-layer coatings.
Źródło:
Archives of Metallurgy and Materials; 2016, 61, 1; 149-152
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coupling of LO Phonons to Excitons in GaN
Autorzy:
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
63.20.Mt
71.55.Eq
Opis:
The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
Autorzy:
Wojdak, M.
Baranowski, J. M.
Suchanek, B.
Pakuła, K.
Jun, J.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1968449.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.61.Ey
78.55.Cr
Opis:
In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility 16 cm$\text{}^{2}$/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1059-1062
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge
Autorzy:
Trautman, P.
Pakuła, K.
Witowski, A. M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044548.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.40.Fy
78.30.Fs
78.66.Fd
81.05.Ea
Opis:
Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 903-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single GaN/AlGaN Quantum Dot Spectroscopy
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047382.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044542.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 879-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791354.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Time evolution of the microphotoluminescence from low-density GaN/$Al_{x}Ga_{1-x}N$ quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
Autorzy:
Suchanek, B.
Palczewska, M.
Pakuła, K.
Baranowski, J.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968425.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.61.Ey
Opis:
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10$\text{}^{17}$ cm$\text{}^{-1}$ and mobility up to 500 cm$\text{}^{2}$/(V s) were achieved whereas hole concentration up to 7×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility about 16 cm$\text{}^{2}$/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g$\text{}_{⊥}$=1.9487 and g$\text{}_{∥}$=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1001-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stan i kierunki usprawniania inwestycji melioracyjnych
Autorzy:
Sokolowski, J.
Bala, W.
Pakula, R.
Powiązania:
https://bibliotekanauki.pl/articles/794415.pdf
Data publikacji:
1989
Wydawca:
Szkoła Główna Gospodarstwa Wiejskiego w Warszawie. Wydawnictwo Szkoły Głównej Gospodarstwa Wiejskiego w Warszawie
Tematy:
melioracja
uzytki rolne
rolnictwo
urzadzenia melioracyjne
drenowanie
prace melioracyjne
materialy
rury drenarskie
ceramika budowlana
ceramika techniczna
systemy ekonomiczne
przedsiebiorstwa
Źródło:
Zeszyty Problemowe Postępów Nauk Rolniczych; 1989, 375
0084-5477
Pojawia się w:
Zeszyty Problemowe Postępów Nauk Rolniczych
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Internal stresses in PVD coated tool composites
Autorzy:
Śliwa, A.
Mikuła, J.
Gołombek, K.
Kwaśny, W.
Pakuła, D.
Powiązania:
https://bibliotekanauki.pl/articles/355303.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
analysis and modelling
computational materials science
finite element method
stresses
coatings PVD
Opis:
The aim of work is the investigation of the internal stresses in PVD coated metal matrix composites (MMC). Sintered MMC substrate is composed of the matrix with the chemical composition corresponding to the high-speed steel, reinforced with the TiC type hard carbide phase. Functionally graded composition of MMC providing of high ductility characteristic of steel in the core zone as well as high hardness characteristic of cemented carbides in the surface zone. Internal stresses were determined with use of finite element method in ANSYS environment. The reason of undertaking the work is necessity of develop the research of internal stresses, occurring in the coating, as well as in the adhesion zone of coating and substrate, which makes it possible to draw valuable conclusions concerning engineering process of the advisable structure and chemical composition of coatings. The investigations were carried out on cutting tools models containing defined zones differing in chemical composition. Modelled materials were characteristic of chemical composition corresponding to the high-speed steel at the core, reinforced with the TiC type hard carbide phase with the growing fraction of these phases in the outward direction from the core to the surface, additionally coated with (Ti,Al)N or Ti(C.N) functionally graded PVD coatings. Results of determined internal stresses were compared with the results calculated using experimental X-ray sin2ψ method. It was demonstrated, that the presented model meets the initial criteria, which gives ground to the assumption about its utility for determining the stresses in coatings as well as in functionally graded sintered materials. The results of computer simulations correlate with the experimental results.
Źródło:
Archives of Metallurgy and Materials; 2016, 61, 3; 1371-1378
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Content and changes in dissolved organic matter in meadow and arable soils over time
Autorzy:
Rosa, E.
Debska, B.
Pakula, J.
Tobiasova, E.
Powiązania:
https://bibliotekanauki.pl/articles/971316.pdf
Data publikacji:
2019
Wydawca:
Uniwersytet Marii Curie-Skłodowskiej. Wydawnictwo Uniwersytetu Marii Curie-Skłodowskiej
Tematy:
meadow and arable soils
toc
tnt
dissolved organic matter
Opis:
Considering the discrepancies in the reports on seasonal changes in the content of dissolved organic carbon, this paper concerns the research which aimed at defining the content and seasonal changes in dissolved organic matter (DOM) in arable and meadow soils in moderate climate conditions. The research has involved the soils sampled in the kujawsko-pomorskie province (Poland). Gleic Phaeozems (meadow soils), Brunic Arenosols and Eutric Cambisols were sampled from the depth of 0-30 cm, 30-60 cm and 60-100 cm, November 2011 through September 2013. The soil samples were analyzed for dry weight content, pH, content of total organic carbon and total nitrogen. DOM was extracted with 0.004 mol·dm⁻³ CaCl₂, in the extracts the content of dissolved organic carbon (DOC) and dissolved nitrogen (DNt) were assayed. The share of DOC was determined by the soil management. The analysis of variance did not show significant differences in the content of TOC and Nt across the soil sampling dates. Were recorded changes in DOC and DNt between successive sampling dates; for topsoil for DOC – from -12.06% to 13.34% (meadow soils) and for DNt -40.84% to 47.44% (arable soils).
Źródło:
Polish Journal of Soil Science; 2019, 52, 2; 183-194
0079-2985
Pojawia się w:
Polish Journal of Soil Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vibration parameters of sandwich beams with two types of MR fluid
Parametry drgań belki z cieczami MR o różnej zawartości cząstek ferromagnetycznych
Autorzy:
Romaszko, M.
Pakuła, S.
Sapiński, B.
Snamina, J.
Powiązania:
https://bibliotekanauki.pl/articles/368953.pdf
Data publikacji:
2011
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
belka
ciecz MR
drgania
beam
MR fluid
vibration
Opis:
The study presents the results of laboratory studies on free vibrations of sandwich beams filled with magnetorheological (MR) fluids characterised by various proportions of ferromagnetic particles by weight. Based on the obtained results, it was possible to determine the impact of the content of the particles in question on the natural frequency of free vibrations and the dimensionless damping coefficient of beam.
W pracy przedstawiono wyniki badań laboratoryjnych drgań swobodnych trójwarstwowych belek wypełnionych cieczami magnetoreologicznymi (MR) o różnej zawartości wagowej cząstek ferromagnetycznych. Na podstawie uzyskanych wyników określono wpływ zawartości tych cząstek na podstawową częstotliwość drgań własnych i bezwymiarowy współczynnik tłumienia belki.
Źródło:
Mechanics and Control; 2011, 30, 3; 151-156
2083-6759
2300-7079
Pojawia się w:
Mechanics and Control
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Resistivity GaN Single Crystalline Substrates
Autorzy:
Porowski, S.
Boćkowski, M.
Łucznik, B.
Grzegory, I.
Wróblewski, M.
Teisseyre, H.
Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Trautman, P.
Pakuła, K.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968415.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.80.Ey
Opis:
High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 958-962
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:
Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:
https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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