Autor: Paškevič, Č. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
Autorzy:: Kozič, A.
Paškevič, Č.
Sužiedėlis, A.
Gradauskas, J.
Ašmontas, S.
Szerling, A.
Wrzesińska, H.
Powiązania:: https://bibliotekanauki.pl/articles/2047175.pdf
Data publikacji:: 2006-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.De
72.30.+q
Opis:: In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
Źródło:: Acta Physica Polonica A; 2006, 110, 6; 845-849
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
Autorzy:: Sužiedėlis, A.
Ašmontas, S.
Požela, J.
Gradauskas, J.
Nargelienė, V.
Paškevič, Č.
Derkach, V.
Golovashchenko, R.
Goroshko, E.
Korzh, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1506099.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
78.70.Gq
75.47.Pq
73.40.Kp
73.40.-c
75.70.-i
Opis:: The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 218-221
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:: Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:: https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:: The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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