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    Wyświetlanie 1-7 z 7
    Tytuł:
    Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering
    Autorzy:
    Pődör, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044528.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Fr
    72.20.Dp
    72.80.Ey
    Opis:
    Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T$\text{}^{-1}\text{}^{/}\text{}^{2}$ like temperature dependence dominated the hole mobility in the investigated temperature range.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 837-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction
    Autorzy:
    Kreshchuk, A. M.
    Novikov, S. V.
    Savel'ev, I. G.
    Polyanskaya, T. A.
    Pődör, B.
    Reményi, G.
    Kovács, Gy.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991650.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.-i
    Opis:
    The energy relaxation in two-dimensional electron gas in In$\text{}_{0.53}$Ga$\text{}_{0.47}$As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h$\text{}_{14}$=(1.1±0.1)×10$\text{}^{7}$ V/cm. Available data for the piezoelectric constant of In$\text{}_{x}$Ga$\text{}_{1-x}$As are discussed in the light of the results of this work.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 415-420
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures
    Autorzy:
    Pődör, B.
    Gombos, G.
    Reményi, G.
    Kovács, Gy.
    Savel'ev, I. G.
    Novikov, S. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968409.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    Opis:
    We report on experiments on low temperature (millikelvin range) activated magnetotransport on low-density two-dimensional electron systems in InGaAs/InP for Landau level filling factors 0.25 ≤ ν ≤ 0.55. The activation energy increases approximately linearly with decreasing filling factor. The observations are discussed in the light of the formation of the Wigner solid.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 945-949
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence and Double-Crystal X-Ray Study of InGaAs/InP: Effect of Rare Earth (Dysprosium) Addition During Liquid Phase Epitaxial Growth
    Autorzy:
    Pödör, B.
    Csontos, L.
    Somogyi, K.
    Vignaud, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1876215.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    72.80.Ey
    Opis:
    High purity In$\text{}_{0.53}$Ga$\text{}_{0.47}$As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy by adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that the addition of Dy strongly reduced the carrier and residual donor concentration, with a concurrent shift of the excitonic luminescence toward higher energies. The observed effects are ascribed to the gettering of residual donor impurities in the melt by Dy, as well as to the effects of possible incorporation of Dy into the grown layers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 465-468
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Magnetotransport in InGaAs/InP at High Magnetic Fields and Low Temperatures
    Autorzy:
    Kovacs, Gy.
    Novikov, V.
    Gombos, G.
    Podor, B.
    Remenyi, Gy.
    Powiązania:
    https://bibliotekanauki.pl/articles/1876235.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    Opis:
    Quantum Hall effect and Shubnikov-de Haas effect measurements were made in two-dimensional electron gas in liquid phase epitaxially grown Ga$\text{}_{0.47}$In$\text{}_{0.53}$As/InP heterostructures in high magnetic fields in the temperature range from 4.2 K down to 60 mK. Two-dimensional electron gas concentrations and mobilities were in the range of (1 - 3) × 10$\text{}^{11}$ cm$\text{}^{-2}$ and (1 - 3) × 10$\text{}^{4}$ cm$\text{}^{2}$/(V s), respectively. Corresponding to this the i = 1 quantum Hall effect plateau occurred at about 6 T magnetic field. Although fractional occupation numbers of about 0.3 were reached, no signs of fractional quantization were detected. Both current and frequency breakdown of the quantum Hall effect were investigated. Narrowing of the plateaus with increasing current differs from that measured in GaAs/AlGaAs structures because of the different mechanisms of dissipation. The fact that the magnetic length becomes smaller than the characteristic scale of the disorder seems to be essential in understanding the low frequency breakdown via the presence of quasi-classical electron states.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 473-476
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variational Calculation for Triangular Quantum Wells Using Modified Trial Wave Function
    Autorzy:
    Pödör, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933949.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Dp
    73.20.Dx
    Opis:
    In calculations involving triangular quantum wells the Fang-Howard variational wave function is widely used because of its simplicity, although it can lead to substantial errors. This can also occur in transport calculations, where the scattering rate, being proportional to the integral of the fourth power of the wave function, depends strongly on the shape of the wave function. A new set of one-parameter wave functions is introduced and the relaxation time is evaluated for short range scatterers. The improved wave function leads up to about 22 per cent increase in the scattering rate, and to a comparable decrease in the relaxation time.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 869-872
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Wigner Crystallization in InGaAs/InP Heterostructures with a Strong Disorder
    Autorzy:
    Kovács, Gy.
    Remenyi, G.
    Gombos, G.
    Savel'ev, I. G.
    Kreshchuk, A. M.
    Hegman, N.
    Pödör, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933825.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    Opis:
    Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 783-786
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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