Autor: Onufrijevs, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Laser Induced Self-Organization of Nanohills/Nanowires in $SiO_2$/Si Interface
Autorzy:: Medvid, A.
Onufrijevs, P.
Dmitruk, I.
Pundyk, I.
Powiązania:: https://bibliotekanauki.pl/articles/1813410.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.47.Gk
75.47.Lx
07.57.Kp
Opis:: The aim of this work is to study optical properties of self-organized Si nanohills formed on the $SiO_2$/Si interface after pulsed Nd:YAG laser irradiation. Nanohills on Si surface give strong photoluminescence in the visible range of spectrum, with a long wing in red portion. This property is explained by charge carrier quantum confinement in nanohills/nanowires.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1067-1070
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Influence of powerful laser radiation on formation of pores in Si by electrochemical etching
Autorzy:: Medvid, A.
Onufrijevs, P.
Fedorenko, L.
Yusupov, M.
Dauksta, E.
Powiązania:: https://bibliotekanauki.pl/articles/385265.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: porous Si
laser
optical storage
chemical etching
Opis:: The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 166-168
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Formation of "black silicon" on a surface of Ni/Si structure by Nd:YAG laser radiation
Autorzy:: Medvid', A.
Karabko, A.
Onufrijevs, P.
Dauksta, E.
Dostanko, A.
Powiązania:: https://bibliotekanauki.pl/articles/385280.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: black silicon
self-organization
microstructures
Nd:YAG laser
Opis:: We have shown the possibility to form a new type of material known as "black silicon". After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm2 the "black silicon" was formed. The formation and self-organization of conelike microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a "black body" absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 140-142
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Characterization of Optical and Photoelectrical Properties of ZnO Crystals
Autorzy:: Onufrijevs, P.
Serevičius, T.
Scajev, P.
Manolis, G.
Medvids, A.
Chernyak, L.
Kuokstis, E.
Yang, C.
Jarasiunas, K.
Powiązania:: https://bibliotekanauki.pl/articles/1506285.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.15.+e
78.45.+h
78.30.Fs
Opis:: We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 274-276
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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