- Tytuł:
- Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions
- Autorzy:
-
Poklonski, N.
Gorbachuk, N.
Nha, Vo
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1400481.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
61.80.Fe - Opis:
- Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the $p^{+}$-region (implantation energy 170 MeV, fluence Φp from $5 \times 10^7$ to $10^9 cm^{-2}$). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 926-928
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł