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    Wyświetlanie 1-6 z 6
    Tytuł:
    Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode
    Autorzy:
    Nakayama, K.
    Hemmi, T.
    Asano, K.
    Miyazawa, T.
    Tsuchida, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1197898.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Hd
    Opis:
    In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the first time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 962-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transport Properties of the Au-Al-Yb Quasicrystal and Approximant under Hydrostatic Pressure
    Autorzy:
    Matsukawa, S.
    Tanaka, K.
    Nakayama, M.
    Kunikata, S.
    Deguchi, K.
    Imura, K.
    Ishimasa, T.
    Sato, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373322.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.27.+a
    72.15.Eb
    75.50.Kj
    Opis:
    The mixed-valence Au-Al-Yb quasicrystal exhibits unusual quantum criticality. Its crystalline approximant behaves like a conventional heavy fermion metal. Due to these novel features, they have attracted much attention recently. To examine the sample dependence of this new type of materials, we have prepared several samples and measured the electrical resistivity both at ambient and high pressures as well as the magnetic susceptibility at ambient pressure. The residual resistivity ratio of the quasicrystals is almost sample independent while the power law exponent n of the electrical resistivity varies from sample to sample. The effective magnetic moment $p_{eff}$ of the quasicrystals is also sample dependent, ranging from about 3.4 to 3.9 $μ_{B}$/Yb, and these values are all smaller than the free $Yb^{3+}$ ion value, confirming the mixed-valence nature. Although the magnitude of n and $p_{eff}$ is sample-dependent, the principal feature of the mixed-valence is confirmed in all the samples studied thus far. A combination of these results indicates correlation between n and $p_{eff}$, suggesting that the 4f electrons may contribute to a scattering mechanism of the conduction electrons. External pressure increases the magnitude of the electrical resistivity and decreases the index n of both the quasicrystal and the approximant. Up to the highest pressure measured in the present study no experimental evidence for a phase transition was found.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 527-530
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tsai-Type Quasicrystal and Its Approximant in Au-Al-Tm Alloys
    Autorzy:
    Tanaka, K.
    Tanaka, Y.
    Ishimasa, T.
    Nakayama, M.
    Matsukawa, S.
    Deguchi, K.
    Sato, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373678.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Dk
    61.44.Br
    Opis:
    A P-type icosahedral quasicrystal with a six-dimensional lattice parameter $a_{6D}$ = 7.411 Å is formed as an equilibrium phase in Au-Al-Tm alloy, of which composition was analyzed to be $Au_{46}Al_{38}Tm_{16}$ by electron probe microanalysis. This quasicrystal is observed as a predominant phase in both as-cast and $Au_{49}Al_{34}Tm_{17}$ alloys annealed at 910°C, and as one of main phases in the alloy slowly cooled from 1020°C. A 1/1 approximant, $Au_{48}Al_{38}Tm_{14}$, is also formed near the composition of the quasicrystal. This is a body-centered cubic structure (space group: Im3̅) with a lattice parameter a = 14.458 Å that is an isostructure to the recently reported 1/1 Tsai-type approximant in Au-Al-Yb. This approximant is characterized by disorderly arranged four Au-Al atoms centered at the Tsai-type cluster, presence of atoms at 8c site, and chemical ordering of Au and Al at sites forming a partial triacontahedron.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 603-607
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Unique genome evolution in an intracellular N2-fixing symbiont of a rhopalodiacean diatom
    Autorzy:
    Nakayama, T.
    Inagaki, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/59328.pdf
    Data publikacji:
    2014
    Wydawca:
    Polskie Towarzystwo Botaniczne
    Tematy:
    nitrogen fixation
    endosymbiosis
    genome
    evolution
    genome reduction
    spheroid body
    symbiont
    rhopalodiacean diatom
    Cyanoprokaryota
    Opis:
    Cyanobacteria, the major photosynthetic prokaryotic lineage, are also known as a major nitrogen fixer in nature. N2-fixing cyanobacteria are frequently found in symbioses with various types of eukaryotes and supply fixed nitrogen compounds to their eukaryotic hosts, which congenitally lack N2-fixing abilities. Diatom species belonging to the family Rhopalodiaceae also possess cyanobacterial symbionts called spheroid bodies. Unlike other cyanobacterial N2-fixing symbionts, the spheroid bodies reside in the cytoplasm of the diatoms and are inseparable from their hosts. Recently, the first spheroid body genome from a rhopalodiacean diatom has been completely sequenced. Overall features of the genome sequence showed significant reductive genome evolution resulting in a diminution of metabolic capacity. Notably, despite its cyanobacterial origin, the spheroid body was shown to be truly incapable of photosynthesis implying that the symbiont energetically depends on the host diatom. The comparative genome analysis between the spheroid body and another N2-fixing symbiotic cyanobacterial group corresponding to the UCYN-A phylotypes – both were derived from cyanobacteria closely related to genus Cyanothece – revealed that the two symbionts are on similar, but explicitly distinct tracks of reductive evolution. Intimate symbiotic relationships linked by nitrogen fixation as seen in rhopalodiacean diatoms may help us better understand the evolution and mechanisms of bacterium-eukaryote endosymbioses.
    Źródło:
    Acta Societatis Botanicorum Poloniae; 2014, 83, 4
    0001-6977
    2083-9480
    Pojawia się w:
    Acta Societatis Botanicorum Poloniae
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solvent-Dependent Quenching of the Lowest Excited Singlet State of 9,10-Dibromoanthracene by Ground-State 2,5-Dimethylhexa-2,4-Diene Yielding 9-Bromoanthracene or the [4+2] Adduct
    Autorzy:
    Nagahara, T.
    Nakayama, T.
    Hamanoue, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992713.pdf
    Data publikacji:
    1998-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.40.Js
    82.50.Fv
    Opis:
    Irrespective of the dielectric constant (ε) or the hydrogen-bonding ability of a pure solvent, the lowest excited singlet state (DBA*) of 9,10-dibromoanth racene (DBA) is quenched by ground-state 2,5-dimethylhexa-2,4-diene (DMHD) giving rise to the appearance of an exciplex emission. By means of sub-picosecond and nanosecond laser photolysis as well as steady-state photolysis, however, the following solvent-dependent results are obtained; (1) in acetonitrile (ε=37.5) and acetone (ε=20.7), an exciplex (DBA-DMHD)* formed between DBA* and DMHD generates the DBA radical anion (DBA$\text{}^{•-+}$) as an intermediate for formation of 9-bromoanthracene (BA) from DBA; (2) in ethanol (ε=24.6), 2-propanol (ε=19.9), 1-octanol (ε=10.3), diethyl ether (ε=4.34), and heptane (ε=1.92), a neutral radical species (NR$\text{}^{•}$) generated by decomposition of (DBA-DMHD)* (or by a reaction of DBA* with DMHD) is an intermediate for formation of a dibenzobicyclo[2.2.2]octadiene-type compound (a [4+2] adduct); (3) both DBA$\text{}^{•-}$ and NR$\text{}^{•}$ are generated in methanol (ε=32.7) but the rate (v) of BA formation upon steady-state photolysis of DBA in the presence of 1 M DMHD decreases in the order of v(acetonitrile, ε=37.5) > v(acetone, ε=20.7) > v(methanol, ε=32.7). It thus can be concluded that the mechanism of exciplex decomposition and the reaction of DBA* with DMHD are affected by not only the dielectric constant of a pure solvent but also its hydrogen-bonding ability.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 4; 701-713
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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