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Wyświetlanie 1-9 z 9
Tytuł:
X-MCD Study of Expanded Lattice Permanent Magnet Materials
Autorzy:
Kapusta, Cz.
Mycielski, R.
Porębska, B.
Ahlers, D.
Attenkofer, K.
Fischer, P.
Schütz, G.
Powiązania:
https://bibliotekanauki.pl/articles/1964141.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.30.-m
Opis:
X-ray magnetic circular dichroism measurements on the cobalt (iron) K edges and samarium L$\text{}_{2}$, L$\text{}_{3}$ edges of Sm$\text{}_{2}$Fe$\text{}_{17}$, Sm$\text{}_{2}$Co$\text{}_{17}$ and their interstitial hydrides and nitrides are reported. Normal absorption profiles show considerable changes upon nitriding for iron- and cobalt K edge and for samarium L$\text{}_{2}$, L$\text{}_{3}$ edges. Much weaker changes are observed upon hydriding. Similarly, significant differences of X-MCD spectra appear between the host Sm$\text{}_{2}$Fe$\text{}_{17}$ (Sm$\text{}_{2}$Co$\text{}_{17}$) and the nitrides, whereas X-MCD signals of the hydrides are similar to those of the hosts. The effects are analysed and discussed in terms of influence of interstitial atom neighbours on the Co(Fe) 4p and Sm 5d electronic bands.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 975-979
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Electrical Properties of Phosphorus Doped Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals
Autorzy:
Van Khoi, Le
Jaroszyński, J.
Witkowska, B.
Mycielski, A.
Gałązka, R. R.
Cisowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968127.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
71.55.Jv
72.80.Ga
Opis:
The high pressure Bridgman technique was used to grow Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P crystals. Under the N$\text{}_{2}$ pressure of 30 atm., we obtained the p$\text{}^{+}$-Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10$\text{}^{18}$ cm$\text{}^{-3}$ and the room temperature conductivity σ(RT) ≈ 30 Ω$\text{}^{-1}$cm$\text{}^{-1}$. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10$\text{}^{3}$) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 833-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Luminescent Properties of ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunction
Autorzy:
Le Van, Khoi
Dobrowolski, W.
Witkowska, B.
Mycielski, A.
Galązka, R. R.
Nguyen, Khoi
Powiązania:
https://bibliotekanauki.pl/articles/1872527.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Fi
Opis:
ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ diode with forward current density in the range 0.003-4.0 A/cm$\text{}^{2}$.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 325-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Photoemission Study of Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se Valence Band
Autorzy:
Orłowski, B.
Fraxedas, J.
Denecke, R.
Kowalski, B.
Mycielski, A.
Ley, L.
Powiązania:
https://bibliotekanauki.pl/articles/1886829.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
79.60.Eq
Opis:
The phenomenon of Fano type resonant photoemission was used to distinguish the Fe electrons derived partial contribution to the valence band of a semimagnetic semiconductor Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se. The states appearing at the middle of the valence band correspond to the Fe 3d electrons while the step of the density of states obtained at the valence band edge region correspondsvto the hybridized s-p-d electrons.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 355-358
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Effect of ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions in Presence of Magnetic Field
Autorzy:
Gałązka, R. R.
Nguyen, The Khoi
Khoi, Le Van
Dobrowolski, W.
Witkowska, B.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1933917.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
Photovoltaic effect of the ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions, prepared by vapor-transport epitaxy of ZnTe on Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate was studied. The photovoltaic measurements were carried out over the temperature range from 12 K to 300 K and in the magnetic field up to 6 T. In the magnetic field, maximum of the sensitivity corresponding to the energy of the forbidden gap of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate splits into two components for σ$\text{}^{+}$ and σ¯ circular polarizations of incident light. This phenomenon was ascribed to the exchange interaction of the magnetic moments of Mn$\text{}^{++}$ ions with band electrons. From the value of the splitting energy the exchange integral N$\text{}_{0}$(α-β) was determined to be 1.15 ± 0.2 eV.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substrates Grown from the Vapor for ZnO Homoepitaxy
Autorzy:
Skupiński, P.
Kopalko, K.
Łusakowska, E.
Domukhovski, V.
Jakieła, R.
Mycielski, A.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811990.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.47.Fg
68.55.J-
68.37.Ps
81.10.Bk
81.15.-z
Opis:
The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1361-1368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe 3d Contribution to Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se Valence Band by Means of Angle-Resolved Photoemission
Autorzy:
Orłowski, B. A.
Bonnet, J.
Hricovini, C.
Pinchaux, R.
Górecka, J.
Kowalski, B. J.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1890985.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
79.60.Eq
Opis:
The Angle-Resolved Photoemission Electron Spectroscopy (AR PES) was applied to investigate the electronic structure of HgSe and Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se crystals for (110) surface. The measured set of Angle-Resolved Energy Distribution Curves (AR EDCs) permits to determine some of the elements of the electronic band structure E(k) (energy-momentum dependence for ҐKX and ҐX directions in the Brillouin zone) for measured crystals. The Fe 3d contribution gives the states lying over the edge of the valence band of HgSe crystal (0.25 eV), and into the valence band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 389-392
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
Autorzy:
Aleszkiewicz, P.
Wojciechowski, T.
Fronc, K.
Kolkovsky, V.
Janik, E.
Jakieła, R.
Mycielski, A.
Karczewski, G.
Aleszkiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811911.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
73.61.Ga
77.90.+k
Opis:
In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1041-1047
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental and Theoretical Analysis οf PbTe-CdTe Solid Solution Grown by Physical Vapour Transport Method
Autorzy:
Szot, M.
Szczerbakow, A.
Dybko, K.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Łusakowska, E.
Dziawa, P.
Mycielski, A.
Story, T.
Bukała, M.
Galicka, M.
Sankowski, P.
Buczko, R.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791366.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
61.50.Ah
71.20.Nr
78.60.Lc
72.20.Fr
Opis:
Bulk monocrystals of $Pb_{1-x}Cd_{x}Te$, with the Cd content x up to 0.11, were grown by physical vapour transport method. The structural, electrical and optical properties of these ternary crystals were studied experimentally and theoretically. All investigated samples exhibit rock-salt structure and high crystal quality, which was confirmed by X-ray rocking curve width parameter of about 100 arcsec. The decrease of the lattice parameter with increasing Cd content x was found experimentally, in agreement with ab initio calculations. The band structures of $Pb_{1-x}Cd_{x}Te$ mixed crystals for x values up to 0.2 were calculated using tight binding approach. The calculated band gap in the L-point increases with the Cd content in qualitative agreement with photoluminescence measurements in the infrared. For all studied $Pb_{1-x}Cd_{x}Te$ samples, the Hall effect and electrical conductivity measurements, performed in the temperature range from 4 to 300 K, revealed p-type conductivity.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 959-961
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-9 z 9

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