- Tytuł:
- Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay
- Autorzy:
-
Matulionis, A.
Liberis, J.
Matulionienė, I.
Šermukšnis, E.
Leach, J.
Wu, M.
Ni, X.
Morkoç, H. - Powiązania:
- https://bibliotekanauki.pl/articles/1506173.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.70.+m
73.50.Fq
73.61.Ey - Opis:
- Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 225-227
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł