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Wyszukujesz frazę "Miyazawa, K." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Examining organic acid root exudate content and function for leafy vegetables under water-stressed conditions
Autorzy:
Kasukawa, N.
Miyazawa, K.
Powiązania:
https://bibliotekanauki.pl/articles/1077275.pdf
Data publikacji:
2020
Wydawca:
Instytut Ogrodnictwa
Tematy:
leaf vegetable
cabbage
abiotic stress
drought stress
organic acid
root exudate
antioxidant enzyme
catalase
ascorbate peroxidase
Opis:
At the plants’ exposal to abiotic stress, organic acids, including citric acid, are exuded through their roots. Previous studies have suggested that the exogenous application of citric acid increases antioxidant activity within the plant. Thus, we postulated that organic acids released into the surroundings during times of environmental stress may function as signaling molecules to increase antioxidant enzyme activity. To gain further insight into this phenomenon, we identified individual organic acids exuded from the roots of leafy vegetables under drought stress. We then analyzed enzyme activity and the root/shoot lengths of seedlings after treatment with the types of organic acids found to be exuded from the studied leafy vegetables, including acetic, citric, lactic, and tartaric acids. There was a significant increase in catalase and ascorbate peroxidase enzyme activity in Napa cabbage (Brassica rapa var. pekinensis) after exogenous citric acid application. Root lengths of cabbage (Brassica oleracea var. capitata) and Napa cabbage seedlings were significantly longer in citric and lactic acids pretreated seedlings compared to those of the control. The above results support the conclusion that exogenous application of citric acid alleviates drought stress. However, there is insufficient evidence to prove that organic acids act as signaling molecules to prime neighboring plants for upcoming stress.
Źródło:
Journal of Horticultural Research; 2020, 28, 2; 83-90
2300-5009
Pojawia się w:
Journal of Horticultural Research
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural characterization of room-temperature synthesized fullerene nanowhiskers
Autorzy:
Miyazawa, K.
Minato, J.
Mashino, T.
Nakamura, S.
Fujino, M.
Suga, T.
Powiązania:
https://bibliotekanauki.pl/articles/146219.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
carbon
C60
fullerene
nanowhisker
structure
TEM
Opis:
Structural properties of various kinds of room-temperature synthesized C60 fullerene nanowhiskers were investigated by TEM and XRD. The C60 nanowhiskers prepared by use of toluene lost their initial solvated hexagonal structure faster than the C60 nanowhiskers prepared by use of m-xylene. The hexagonal structure of C60 nanowhiskers prepared by use of toluene was stabilized by adding C60[C(COOC2H5)2]. These results suggest that large solute molecules in the C60 nanowhisker matrix stabilize their initially solvated hexagonal structure. Furthermore, the addition of a sufficient amount of C60(2-methoxycarbonyl-N-methylpyrrolidine) into the m-xylene solution of C60 produced the C60 nanowhiskers indicating the formation of ordered solid solution of C60 and C60(2-methoxycarbonyl-N-methylpyrrolidine).
Źródło:
Nukleonika; 2006, 51,suppl.1; 41-48
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode
Autorzy:
Nakayama, K.
Hemmi, T.
Asano, K.
Miyazawa, T.
Tsuchida, H.
Powiązania:
https://bibliotekanauki.pl/articles/1197898.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Hd
Opis:
In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the first time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 962-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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